公开(公告)号：US20250043422A1

公开(公告)日：2025-02-06

申请号：US18786895

申请日：2024-07-29

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Eric Shero ,  Michael Eugene Givens

IPC: C23C16/455 ,  C23C16/02 ,  C23C16/40

Abstract: A method for depositing one or more layers on a substrate is disclosed. The method may comprise providing a substrate, etching a native oxide from a surface of the substrate responsive to exposure to an etchant, contacting an etched surface of the substrate with an oxidizing agent oxidizing a first layer of the substrate responsive to contact with the oxidizing agent and depositing a second layer on the first layer.

公开(公告)号：US20230088313A1

公开(公告)日：2023-03-23

申请号：US17948674

申请日：2022-09-20

Applicant: ASM IP Holding, B.V.

Inventor： Herbert Terhorst ,  Dinkar Nandwana ,  Eric Shero ,  Allen D'Ambra ,  Jessica Akemi Cimada da Silva ,  Daner Abdula

IPC: B05B1/00 ,  B05B1/18

Abstract: A gas distribution system having a first plurality of apertures to supply a gas source to a reaction chamber and a second plurality of apertures surrounding the first plurality of apertures and configured to remove the gas from the reaction chamber. In one embodiment, the second plurality of apertures may gradually increase in diameter as the distance from a main exhaust channel increases. Alternatively, or in addition, the angle spacing between adjacent apertures may gradually decrease as the distance from the main exhaust channel increases.

公开(公告)号：US20220285146A1

公开(公告)日：2022-09-08

申请号：US17680761

申请日：2022-02-25

Applicant: ASM IP Holding B.V.

Inventor： Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Qi Xie ,  Timothee Blanquart ,  Eric Shero

IPC: H01L21/02 ,  H01L27/108

Abstract: Disclosed are methods and systems for depositing layers comprising a metal and nitrogen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US11208722B2

公开(公告)日：2021-12-28

申请号：US15177210

申请日：2016-06-08

Applicant: ASM IP Holding B.V.

Inventor： Carl L. White ,  Eric Shero

IPC: C23C16/455 ,  C23C16/44

Abstract: A device for performing ALD includes a housing having a vacuum chamber that surrounds a horizontal flow reactor. The device further includes a gas distribution system for delivering gases to the reactor. The gas distribution system includes at least one of a high temperature valve and a high temperature filter disposed inside the vacuum chamber. The high temperature valve (and/or filter) controls (and/or filters) a supply of a precursor/reactant gas, inert gas, or precursor/reactant and inert gas mixture before it enters the horizontal flow reactor.

公开(公告)号：US11139383B2

公开(公告)日：2021-10-05

申请号：US16849144

申请日：2020-04-15

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L29/49 ,  H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/34 ,  C23C16/455 ,  H01L29/51

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US10858737B2

公开(公告)日：2020-12-08

申请号：US14444744

申请日：2014-07-28

Applicant: ASM IP Holding B.V.

Inventor： Carl White ,  Eric Shero ,  Jereld Lee Winkler ,  David Marquardt

IPC: C23C16/455 ,  C23C16/44

Abstract: Showerhead assemblies, gas distribution plates, and systems including the same are disclosed. Exemplary showerhead assemblies include a gas distribution plate. Exemplary gas distribution plates include apertures designed to direct a flow of gas and to reduce stagnation of gas on surfaces of the plates.

公开(公告)号：US10683571B2

公开(公告)日：2020-06-16

申请号：US14188760

申请日：2014-02-25

Applicant: ASM IP Holding B.V.

Inventor： Lucian C. Jdira ,  Herbert Terhorst ,  Michael Halpin ,  Carl White ,  Todd Robert Dunn ,  Eric Shero ,  Melvin Verbass ,  Christopher Wuester ,  Kyle Fondurulia

IPC: C23C16/455 ,  H01L21/67 ,  H01J37/32

Abstract: A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.

公开(公告)号：US20190043962A1

公开(公告)日：2019-02-07

申请号：US15997520

申请日：2018-06-04

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L29/49 ,  C23C16/455 ,  H01L21/3205 ,  H01L21/285 ,  C23C16/06 ,  C23C16/34 ,  H01L29/51

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US10087522B2

公开(公告)日：2018-10-02

申请号：US15135224

申请日：2016-04-21

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Eric Shero ,  Suvi Haukka ,  Robert Brennan Milligan ,  Michael Eugene Givens

IPC: C23C16/38 ,  C23C16/455

Abstract: A method for depositing a metal boride film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a boron compound precursor onto the substrate. A reaction between the metal halide precursor and the boron compound precursor forms a metal boride film. Specifically, the method discloses forming a tantalum boride (TaB2) or a niobium boride (NbB2) film.

公开(公告)号：US20170306479A1

公开(公告)日：2017-10-26

申请号：US15135258

申请日：2016-04-21

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Eric Shero ,  Suvi Haukka ,  Robert Brennan Milligan ,  Michael Eugene Givens

IPC: C23C16/38 ,  C23C16/455 ,  C23C16/42

CPC classification number: C23C16/38 ,  C23C16/42 ,  C23C16/45525

Abstract: A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a reducing precursor onto the substrate. A reaction between the metal halide precursor and the reducing precursor forms a metal film. Specifically, the method discloses forming a metal boride or a metal silicide film.