公开(公告)号：US12159788B2

公开(公告)日：2024-12-03

申请号：US17546186

申请日：2021-12-09

Applicant: ASM IP Holding B.V.

Inventor： Maart van Druenen ,  Charles Dezelah ,  Qi Xie ,  Petro Deminskyi ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Lifu Chen

IPC: H01L21/28 ,  C23C16/32 ,  H01L29/40 ,  H01L29/49

Abstract: Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate.

公开(公告)号：US20230015690A1

公开(公告)日：2023-01-19

申请号：US17812488

申请日：2022-07-14

Applicant: ASM IP Holding, B.V.

Inventor： Maart van Druenen ,  Qi Xie ,  Charles Dezelah ,  Petro Deminskyi ,  Lifu Chen ,  Giuseppe Alessio Verni ,  Ren-Jie Chang

IPC: C23C16/14 ,  C23C16/18 ,  C23C16/44

Abstract: Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US12031206B2

公开(公告)日：2024-07-09

申请号：US17812488

申请日：2022-07-14

Applicant: ASM IP Holding, B.V.

Inventor： Maart van Druenen ,  Qi Xie ,  Charles Dezelah ,  Petro Deminskyi ,  Lifu Chen ,  Giuseppe Alessio Verni ,  Ren-Jie Chang

IPC: C23C16/14 ,  C23C16/18 ,  C23C16/44

CPC classification number: C23C16/14 ,  C23C16/18 ,  C23C16/4408

Abstract: Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US20230101229A1

公开(公告)日：2023-03-30

申请号：US17953585

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Viljami Pore ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Charles Dezelah ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Michael Givens ,  Eric James Shero

IPC: H01L21/768 ,  H01L21/67 ,  H01L21/02

Abstract: A multiple-layer method for forming material within a gap on a surface of a substrate is disclosed. An exemplary method includes forming a layer of first material overlying the substrate and forming a layer of second (e.g., initially flowable) material within a region of the first material to thereby at least partially fill the gap with material in a seamless and/or void less manner.

公开(公告)号：US20210332476A1

公开(公告)日：2021-10-28

申请号：US17113301

申请日：2020-12-07

Applicant: ASM IP Holding B.V.

Inventor： Pia Homm Jara ,  Werner Knaepen ,  Dieter Pierreux ,  Bert Jongbloed ,  Panagiota Arnou ,  Ren-Jie Chang ,  Qi Xie ,  Giuseppe Alessio Verni ,  Gido van der Star

IPC: C23C16/34 ,  H01L21/285 ,  C23C16/44 ,  C23C16/455 ,  C23C16/04 ,  C23C16/56

Abstract: The current disclosure relates to methods of forming a vanadium nitride-containing layer. The method comprises providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber. The disclosure further relates to structures and devices comprising the vanadium nitride-containing layer.

公开(公告)号：US20250079169A1

公开(公告)日：2025-03-06

申请号：US18815676

申请日：2024-08-26

Applicant: ASM IP Holding B.V.

Inventor： Vincent Vandalon ,  Ren-Jie Chang ,  Giuseppe Alessio Verni ,  Alessandra Leonhardt ,  Michael Givens

IPC: H01L21/02

Abstract: Methods for forming semiconductor structures including 2D-transition metal dichalcogenide layers, methods for forming gate stacks including metallic 2D-transition metal dichalcogenide layer, as well as methods for forming ternary phase 2D-transition metal dichalcogenide layer by an atomic layer deposition process (ALD) are disclosed.

公开(公告)号：US20220285211A1

公开(公告)日：2022-09-08

申请号：US17680711

申请日：2022-02-25

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Shinya Iwashita ,  Charles Dezelah ,  Jan Willem Maes ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore ,  Giuseppe Alessio Verni ,  Qi Xie ,  Ren-Jie Chang ,  Eric James Shero

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/455

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20220102163A1

公开(公告)日：2022-03-31

申请号：US17484144

申请日：2021-09-24

Applicant: ASM IP Holding B.V.

Inventor： Ren-Jie Chang ,  Giuseppe Alessio Verni ,  Qi Xie

IPC: H01L21/3213 ,  H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/56

Abstract: Devices and methods for selectively etching a metal nitride layer are disclosed. The methods comprise an oxidation step and an etching step which are optionally separated by a purge, and which can be repeated in a cyclical etching process.

公开(公告)号：US20250062128A1

公开(公告)日：2025-02-20

申请号：US18922849

申请日：2024-10-22

Applicant: ASM IP Holding B.V.

Inventor： Maart van Druenen ,  Charles Dezelah ,  Qi Xie ,  Petro Deminskyi ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Lifu Chen

IPC: H01L21/28 ,  C23C16/32 ,  H01L29/40 ,  H01L29/49

Abstract: Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate.

公开(公告)号：US20240150892A1

公开(公告)日：2024-05-09

申请号：US18404983

申请日：2024-01-05

Applicant: ASM IP Holding B.V.

Inventor： Pia Homm Jara ,  Werner Knaepen ,  Dieter Pierreux ,  Bert Jongbloed ,  Panagiota Arnou ,  Ren-Jie Chang ,  Qi Xie ,  Giuseppe Alessio Verni ,  Gido van der Star

IPC: C23C16/34 ,  C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285

CPC classification number: C23C16/34 ,  C23C16/04 ,  C23C16/4408 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/56 ,  H01L21/28568

Abstract: The current disclosure relates to methods of forming a vanadium nitride-containing layer. The method comprises providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber. The disclosure further relates to structures and devices comprising the vanadium nitride-containing layer.