公开(公告)号：US20250157811A1

公开(公告)日：2025-05-15

申请号：US18944132

申请日：2024-11-12

Applicant: ASM IP Holding B.V.

Inventor： Jeonghoon Jang ,  KiKang Kim ,  YoungMin Kim ,  Haein Kim ,  JeungHoon Han

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56 ,  H01L21/3065

Abstract: Provided is a method of processing a substrate in a reaction chamber, more particularly to a method of increasing a wet etch rate of SiCN layer in order to reduce an overhang from a SiCN layer formed on a stepped structure. The method comprises supplying a carbon-containing silicon source and a nitrogen gas simultaneously while applying a power, followed by performing a post treatment, wherein the wet etch rate of SiCN layer is modulated by the amount of nitrogen source supplied.