WAFER PROCESSING APPARATUS USING PLASMA PHASE SHIFT

    公开(公告)号:US20240404790A1

    公开(公告)日:2024-12-05

    申请号:US18674057

    申请日:2024-05-24

    Abstract: A wafer processing system using plasma would be presented. The system may comprise a plurality of reaction chambers disposed on a platform, each of them being configured to process wafers; a plasma generator coupled to the plurality of reaction chambers individually and configured to generate plasma with a certain frequency and a certain phase, and further configured to provide the generated plasma to the plurality of reaction chambers; and a control circuit connected to the plasma generator and configured to adjust the phase of the plasma generated by the plasma generator; wherein, the control circuit is further configured to shift the phase of the generated plasma provided to the plurality of reaction chambers independently.

    SUBSTRATE PROCESSING APPARATUS USING PLASMA PHASE SHIFT

    公开(公告)号:US20250166971A1

    公开(公告)日:2025-05-22

    申请号:US18963894

    申请日:2024-11-29

    Abstract: A substrate processing system using plasma would be presented. The system may comprise a plurality of reaction chambers disposed on a platform, each of them being configured to process substrates; a plasma generator or generator coupled to the plurality of reaction chambers individually and configured to generate plasma or plasma power with a certain frequency and a certain phase, and further configured to provide the generated plasma or plasma power to the plurality of reaction chambers; and a control circuit connected to the plasma generator or generator and configured to adjust the phase of the plasma or plasma power generated by the plasma generator or generator; wherein, the control circuit is further configured to shift the phase of the generated plasma or plasma power provided to the plurality of reaction chambers independently.

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