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    Substrate processing apparatus with an injector
    1.
    发明授权
    Substrate processing apparatus with an injector 有权

    公开(公告)号：US12195852B2

    公开(公告)日：2025-01-14

    申请号：US17530161

    申请日：2021-11-18

    Applicant: ASM IP Holding B.V.

    Inventor： Kornelius Haanstra ,  Lucian C. Jdira ,  Chris G. M. de Ridder ,  Robin Roelofs ,  Werner Knaepen ,  Herbert Terhorst

    IPC: C23C16/455 ,  C23C16/458 ,  H01L21/673 ,  H01L21/687

    Abstract: A substrate processing apparatus having a tube, a closed liner lining the interior surface of the tube, a plurality of gas injectors to provide a gas to an inner space of the liner, and, a gas exhaust duct to remove gas from the inner space is disclosed. The liner may have a substantially cylindrical wall delimited by a liner opening at a lower end and being substantially closed for gases above the liner opening. The apparatus may have a boat constructed and arranged moveable into the inner space via the liner opening and provided with a plurality of substrate holders for holding a plurality of substrates over a substrate support length in the inner space. Each of the gas injectors may have a single exit opening at the top and the exit openings of the plurality of injectors are substantially equally divided over the substrate support length.

    CYCLIC ALUMINUM NITRIDE DEPOSITION IN A BATCH REACTOR
    2.
    发明申请
    CYCLIC ALUMINUM NITRIDE DEPOSITION IN A BATCH REACTOR 有权
    循环反应器中的氮化铝沉淀

    公开(公告)号：US20140357090A1

    公开(公告)日：2014-12-04

    申请号：US13907718

    申请日：2013-05-31

    Applicant: ASM IP Holding B.V.

    Inventor： Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Peter Zagwijn ,  Hessel Sprey ,  Cornelius A. van der Jeugd ,  Marinus Josephus de Blank ,  Robin Roelofs ,  Qi Xie ,  Jan Willem Maes

    IPC: H01L21/02

    CPC classification number: H01L21/02178 ,  C23C16/303 ,  C23C16/45525 ,  C23C16/4583 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003

    Abstract: A process for depositing aluminum nitride is disclosed. The process comprises providing a plurality of semiconductor substrates in a batch process chamber and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to plasma during the deposition cycles. Each deposition cycle comprises flowing an aluminum precursor pulse into the batch process chamber, removing the aluminum precursor from the batch process chamber, and removing the nitrogen precursor from the batch process chamber after flowing the nitrogen precursor and before flowing another pulse of the aluminum precursor. The process chamber may be a hot wall process chamber and the deposition may occur at a deposition pressure of less than 1 Torr.

    Abstract translation: 公开了一种沉积氮化铝的方法。 该方法包括在间歇处理室中提供多个半导体衬底，并且通过在沉积循环期间不使衬底暴露于等离子体，通过执行多个沉积循环在衬底上沉积氮化铝层。 每个沉积循环包括将铝前体脉冲流入分批处理室，从分批处理室中除去铝前体，以及在氮气前体流动之后并且在流过铝前体的另一个脉冲之前从分批处理室中除去氮前体。 处理室可以是热壁处理室，并且沉积可以在小于1托的沉积压力下进行。

    SUBSTRATE PROCESSING APPARATUS WITH AN INJECTOR
    5.
    发明申请
    SUBSTRATE PROCESSING APPARATUS WITH AN INJECTOR 有权

    公开(公告)号：US20240384411A1

    公开(公告)日：2024-11-21

    申请号：US18788528

    申请日：2024-07-30

    Applicant: ASM IP Holding B.V.

    Inventor： Kornelius Haanstra ,  Lucian C. Jdira ,  Chris G.M. de Ridder ,  Robin Roelofs ,  Werner Knaepen ,  Herbert Terhorst

    IPC: C23C16/455 ,  C23C16/458 ,  H01L21/673 ,  H01L21/687

    Abstract: A substrate processing apparatus having a tube, a closed liner lining the interior surface of the tube, a plurality of gas injectors to provide a gas to an inner space of the liner, and, a gas exhaust duct to remove gas from the inner space is disclosed. The liner may have a substantially cylindrical wall delimited by a liner opening at a lower end and being substantially closed for gases above the liner opening. The apparatus may have a boat constructed and arranged moveable into the inner space via the liner opening and provided with a plurality of substrate holders for holding a plurality of substrates over a substrate support length in the inner space. Each of the gas injectors may have a single exit opening at the top and the exit openings of the plurality of injectors are substantially equally divided over the substrate support length.

    Method of making a resistive random access memory
    6.
    发明授权
    Method of making a resistive random access memory 有权
    制造电阻式随机存取存储器的方法

    公开(公告)号：US09520562B2

    公开(公告)日：2016-12-13

    申请号：US14334536

    申请日：2014-07-17

    Applicant: ASM IP Holding B.V.

    Inventor： Qi Xie ,  Jan Willem Maes ,  Tom Blomberg ,  Marko Tuominen ,  Suvi Haukka ,  Robin Roelofs ,  Jacob Woodruff

    IPC: H01L45/00 ,  H01L21/02 ,  H01L27/24

    CPC classification number: H01L45/1616 ,  H01L21/02175 ,  H01L21/0228 ,  H01L27/249 ,  H01L45/08 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/146 ,  H01L45/1608

    Abstract: The disclosed technology generally relates to semiconductor devices, and relates more particularly to resistive random access memory devices and methods of making the same. In one aspect, a method of forming a resistive random access memory cell of a random access memory device includes forming a first electrode and forming a resistive switching material comprising an oxide of a pnictogen element by atomic layer deposition. The method additionally includes forming a metallic layer comprising the pnictogen element by atomic layer deposition (ALD). The resistive switching material is interposed between the first electrode and the metallic layer.

    Abstract translation: 所公开的技术通常涉及半导体器件，更具体地涉及电阻随机存取存储器件及其制造方法。 一方面，一种形成随机存取存储器件的电阻随机存取存储单元的方法包括：通过原子层沉积形成第一电极并形成包含棱镜元件的氧化物的电阻开关材料。 该方法还包括通过原子层沉积（ALD）形成包含棱镜元件的金属层。 电阻开关材料介于第一电极和金属层之间。

    SUBSTRATE PROCESSING APPARATUS WITH AN INJECTOR
    7.
    发明申请
    SUBSTRATE PROCESSING APPARATUS WITH AN INJECTOR 有权

    公开(公告)号：US20220162751A1

    公开(公告)日：2022-05-26

    申请号：US17530161

    申请日：2021-11-18

    Applicant: ASM IP Holding B.V.

    Inventor： Kornelius Haanstra ,  Lucian C. Jdira ,  Chris G.M. de Ridder ,  Robin Roelofs ,  Werner Knaepen ,  Herbert Terhorst

    IPC: C23C16/455 ,  H01L21/673 ,  H01L21/687 ,  C23C16/458

    Abstract: A substrate processing apparatus having a tube, a closed liner lining the interior surface of the tube, a plurality of gas injectors to provide a gas to an inner space of the liner, and, a gas exhaust duct to remove gas from the inner space is disclosed. The liner may have a substantially cylindrical wall delimited by a liner opening at a lower end and being substantially closed for gases above the liner opening. The apparatus may have a boat constructed and arranged moveable into the inner space via the liner opening and provided with a plurality of substrate holders for holding a plurality of substrates over a substrate support length in the inner space. Each of the gas injectors may have a single exit opening at the top and the exit openings of the plurality of injectors are substantially equally divided over the substrate support length.

    TEMPERATURE-INDEXED THIN FILM DEPOSITION REACTORS
    8.
    发明申请
    TEMPERATURE-INDEXED THIN FILM DEPOSITION REACTORS 审中-公开

    公开(公告)号：US20200071828A1

    公开(公告)日：2020-03-05

    申请号：US16677446

    申请日：2019-11-07

    Applicant: ASM IP Holding B.V.

    Inventor： Bert Jongbloed ,  Delphine Longrie ,  Robin Roelofs ,  Lucian Jdira ,  Suvi Haukka ,  Antti Niskanen ,  Jun Kawahara ,  Yukihiro Mori

    IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/02 ,  H01L21/285 ,  C23C16/54

    Abstract: In accordance with some embodiments herein, methods and apparatuses for deposition of thin films are provided. In some embodiments, a deposition reactor is provided comprising: a first station configured to contain a substrate, the first station comprising a first heating element; a second station configured to contain the substrate, the second station comprising a second heating element, wherein the first station is configured to contact the substrate with a first reactant in the first station in substantial isolation from the second station such that a layer of the first reactant is deposited on the substrate, wherein the first heating element is configured to heat the first station to a first station temperature during contacting of the substrate with the first reactant, wherein the second station is configured to contact the substrate with a second reactant in the second station substantially in the absence of the first reactant, and wherein the second heating element is configured to heat the second station to a second station temperature during contacting of the substrate with the second reactant, a transfer system; and a controller set to control a cycle of: moving the substrate via the transfer system to the first station, directing the first station to contact the substrate with the first reactant at the first station temperature, moving the substrate to the second station via the transfer system, and directing the second station to contact the substrate with the second reactant at the second station temperature, and further set to repeat the cycle until a film of desired thickness is formed on a surface of the substrate.

    Method of making a resistive random access memory device
    9.
    发明授权
    Method of making a resistive random access memory device 有权
    制造电阻随机存取存储器件的方法

    公开(公告)号：US09472757B2

    公开(公告)日：2016-10-18

    申请号：US14334566

    申请日：2014-07-17

    Applicant: ASM IP Holding B.V.

    Inventor： Qi Xie ,  Jan Willem Maes ,  Tom Blomberg ,  Marko Tuominen ,  Suvi Haukka ,  Robin Roelofs ,  Jacob Woodruff

    IPC: H01L45/00 ,  H01L21/02 ,  H01L39/24

    CPC classification number: H01L45/146 ,  H01L21/02175 ,  H01L21/0228 ,  H01L39/249 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/14 ,  H01L45/1616 ,  H01L45/1641

    Abstract: The disclosed technology generally relates to the field of semiconductor processing and more particularly to resistive random access memory and methods for manufacturing such memory. In one aspect, a method of fabricating a memory cell includes providing a substrate and providing a first electrode on the substrate. The method additionally includes depositing, via atomic layer deposition, a resistive switching material on the first electrode, wherein the resistive switching material comprises an oxide comprising a pnictogen chosen from the group consisting of As, Bi, Sb, and P. The resistive switching material may be doped, e.g., with Sb or an antimony-metal alloy. A second electrode may be formed over and in contact with the resistive switching material.

    Abstract translation: 所公开的技术通常涉及半导体处理领域，更具体地涉及电阻随机存取存储器以及用于制造这种存储器的方法。 一方面，一种制造存储单元的方法包括提供衬底并在衬底上提供第一电极。 该方法还包括通过原子层沉积沉积第一电极上的电阻式开关材料，其中电阻开关材料包括一种氧化物，该氧化物包括选自由As，Bi，Sb和P组成的组的pnictogen。电阻式开关材料 可以掺杂，例如用Sb或锑 - 金属合金。 第二电极可以形成在电阻开关材料之上并与电阻开关材料接触。

    METHOD OF MAKING A RESISTIVE RANDOM ACCESS MEMORY DEVICE
    10.
    发明申请
    METHOD OF MAKING A RESISTIVE RANDOM ACCESS MEMORY DEVICE 有权
    制造电阻随机访问存储器件的方法

    公开(公告)号：US20150021540A1

    公开(公告)日：2015-01-22

    申请号：US14334566

    申请日：2014-07-17

    Applicant: ASM IP Holding B.V.

    Inventor： Qi Xie ,  Jan Willem Maes ,  Tom Blomberg ,  Marko Tuominen ,  Suvi Haukka ,  Robin Roelofs ,  Jacob Woodruff

    IPC: H01L45/00

    CPC classification number: H01L45/146 ,  H01L21/02175 ,  H01L21/0228 ,  H01L39/249 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/14 ,  H01L45/1616 ,  H01L45/1641

    Abstract: The disclosed technology generally relates to the field of semiconductor processing and more particularly to resistive random access memory and methods for manufacturing such memory. In one aspect, a method of fabricating a memory cell includes providing a substrate and providing a first electrode on the substrate. The method additionally includes depositing, via atomic layer deposition, a resistive switching material on the first electrode, wherein the resistive switching material comprises an oxide comprising a pnictogen chosen from the group consisting of As, Bi, Sb, and P. The resistive switching material may be doped, e.g., with Sb or an antimony-metal alloy. A second electrode may be formed over and in contact with the resistive switching material.

    Abstract translation: 所公开的技术通常涉及半导体处理领域，更具体地涉及电阻随机存取存储器以及用于制造这种存储器的方法。 一方面，一种制造存储单元的方法包括提供衬底并在衬底上提供第一电极。 该方法还包括通过原子层沉积沉积第一电极上的电阻式开关材料，其中电阻开关材料包括一种氧化物，该氧化物包括选自由As，Bi，Sb和P组成的组的pnictogen。电阻式开关材料 可以掺杂，例如用Sb或锑 - 金属合金。 第二电极可以形成在电阻开关材料之上并与电阻开关材料接触。

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