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公开(公告)号：US20230420309A1
公开(公告)日：2023-12-28
申请号：US18212827
申请日：2023-06-22
Applicant: ASM IP Holding B.V.
Inventor： Omar Elleuch , Robinson James , Peter Westrom , Caleb Miskin , Alexandros Demos
IPC: H01L21/66 , H01L21/02 , H01L21/3065
CPC classification number: H01L22/20 , H01L21/02532 , H01L21/3065
Abstract: A method of forming silicon within a gap on a surface of a substrate. The method includes use of two or more pyrometers to measure temperatures at two or more positions on a substrate and/or a substrate support and a plurality of heaters that can be divided into zones of heaters, wherein the heaters or zones of heaters can be independently controlled based on the measured temperatures and desired temperature profiles.
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Patent Agency Ranking
2.发明公开公开(公告)号：US20240209510A1
公开(公告)日：2024-06-27
申请号：US18598172
申请日：2024-03-07
Applicant: ASM IP Holding B.V.
Inventor： Amir Kajbafvala , Yanfu Lu , Robinson James , Caleb Miskin
CPC classification number: C23C16/482 , C23C16/24 , C23C16/30 , C23C16/52 , G01J5/0007 , G01K7/10 , H01L29/66742 , H01L29/66795
Abstract: A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.
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3.发明授权公开(公告)号：US11959173B2
公开(公告)日：2024-04-16
申请号：US17697079
申请日：2022-03-17
Applicant: ASM IP Holding B.V.
Inventor： Amir Kajbafvala , Yanfu Lu , Robinson James , Caleb Miskin
CPC classification number: C23C16/482 , C23C16/24 , C23C16/30 , C23C16/52 , G01J5/0007 , G01K7/10 , H01L29/66742 , H01L29/66795
Abstract: A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.
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公开(公告)号：US20220352006A1
公开(公告)日：2022-11-03
申请号：US17730967
申请日：2022-04-27
Applicant: ASM IP Holding B.V.
Inventor： Shujin Huang , Junwei Su , Xing Lin , Alexandros Demos , Rutvij Naik , Wentao Wang , Matthew Goodman , Robin Scott , Amir Kajbafvala , Robinson James , Youness Alvandi-Tabrizi , Caleb Miskin
IPC: H01L21/687 , C23C16/52 , C23C16/458
Abstract: A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.
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公开(公告)号：US20240218560A1
公开(公告)日：2024-07-04
申请号：US18397635
申请日：2023-12-27
Applicant: ASM IP Holding B.V.
Inventor： Sandeep Ghosh , Robinson James , Caleb Miskin
CPC classification number: C30B25/16 , C23C16/24 , C23C16/52 , C30B25/10 , C30B29/06 , G01B21/08 , H01L21/02532 , H01L21/02576 , H01L21/0262
Abstract: A semiconductor processing system includes a precursor delivery arrangement, a chamber arrangement, and a controller. The chamber arrangement is connected to the precursor delivery arrangement. The controller is operatively connected to the precursor delivery arrangement and the chamber arrangement, includes a processor disposed in communication with a memory, and is responsive to instructions recorded on the memory to acquire a baseline substrate thickness profile for a selected process recipe, determine a first temperature profile setting for depositing a first material layer at low pressure for the selected process recipe, determine a high-pressure thermal offset for the first temperature profile setting, apply the high-pressure thermal offset to the first temperature profile setting to determine a second temperature profile setting, seat a first substrate on the first substrate support within the chamber arrangement and flow a second material layer precursor via the precursor delivery arrangement over the first substrate at high pressure according to the selected process recipe using the second temperature profile setting.
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6.发明申请公开(公告)号：US20220298643A1
公开(公告)日：2022-09-22
申请号：US17697079
申请日：2022-03-17
Applicant: ASM IP Holding B.V.
Inventor： Amir Kajbafvala , Yanfu Lu , Robinson James , Caleb Miskin
Abstract: A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.
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