公开(公告)号：USD990441S1

公开(公告)日：2023-06-27

申请号：US29806823

申请日：2021-09-07

Applicant: ASM IP Holding B.V.

Designer： JeongHo Lee ,  JinHo Shin ,  DaeYoun Kim ,  Jaehyun Kim ,  TaeWoong Kim

Abstract: FIG. 1 is a top perspective view of the gas flow control plate, showing our new design;
FIG. 2 is a bottom perspective view thereof;
FIG. 3 is a top view thereof;
FIG. 4 is a bottom view thereof;
FIG. 5 is a front view thereof;
FIG. 6 is a back view thereof;
FIG. 7 is a right side view thereof; and,
FIG. 8 is a left side view thereof.

公开(公告)号：US20220243322A1

公开(公告)日：2022-08-04

申请号：US17585224

申请日：2022-01-26

Applicant: ASM IP Holding B.V.

Inventor： TaeWoong Kim ,  JiHwan Ryu ,  YongWoong Jeong ,  YoungSim Kim ,  YoungMin Kim

IPC: C23C16/44 ,  H01J37/32 ,  C23C16/458 ,  C23C16/455

Abstract: Provided is a reactor capable of improving the symmetry of the profile of a thin film deposited on a substrate with an asymmetric exhaust structure, wherein a distance between a gas flow control ring (FCR) and an exhaust unit on one side where an exhaust port is located is greater than a distance between the FCR and the exhaust unit on the opposite side of the exhaust port.