公开(公告)号：US20250140555A1

公开(公告)日：2025-05-01

申请号：US18930777

申请日：2024-10-29

Applicant: ASM IP Holding B.V.

Inventor： Vivek Koladi Mootheri ,  Jerome Innocent ,  David Ezequiel Guzmán Caballero ,  Andrea Illiberi ,  Hameeda Jagalur Basheer ,  Aditya Chauhan ,  Leo Lukose ,  Charles Dezelah

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455

Abstract: Methods of forming magnesium indium zinc oxide (MIZO) layers by vapor deposition are provided. In some embodiments cyclical deposition processes for forming MIZO layers comprise a deposition cycle including alternately and sequentially contacting a substrate in a reaction chamber with a vapor phase indium precursor, a vapor phase zinc precursor, a vapor phase magnesium precursor, and an oxygen reactant.

公开(公告)号：US20230377877A1

公开(公告)日：2023-11-23

申请号：US18319933

申请日：2023-05-18

Applicant: ASM IP Holding, B.V.

Inventor： Alessandra Leonhardt ,  Matthew Surman ,  Perttu Sippola ,  Ranjith Karuparambil Ramachandran ,  Charles Dezelah ,  Michael Givens ,  Andrea Illiberi ,  Tatiana Ivanova ,  Leo Lukose ,  Lorenzo Bottiglieri ,  Suvidyakumar Vinod Homkar ,  Vivek Koladi Mootheri

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/56 ,  C23C16/455

CPC classification number: H01L21/0228 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02318 ,  C23C16/405 ,  C23C16/56 ,  C23C16/45527 ,  C23C16/45553 ,  H01L29/0673

Abstract: Methods and related systems of processing a substrate. Described methods comprise executing a plurality of deposition cycles to form a doped hafnium zirconium oxide layer on the substrate.

公开(公告)号：US20250132149A1

公开(公告)日：2025-04-24

申请号：US18918187

申请日：2024-10-17

Applicant: ASM IP Holding B.V.

Inventor： Aditya Chauhan ,  Vivek Koladi Mootheri ,  Lorenzo Bottiglieri ,  Andrea IIIiberi ,  Michael Eugene Givens

IPC: H01L21/02 ,  C23C16/44 ,  C23C16/455 ,  H01L29/786

Abstract: Methods for forming hydrogen barriers for, for example, channel layers in thin film transistors. The hydrogen barriers can comprise doped dielectrics such as magnesium-doped aluminum oxide. Further described are related structures and systems.

公开(公告)号：US20240339493A1

公开(公告)日：2024-10-10

申请号：US18624808

申请日：2024-04-02

Applicant: ASM IP Holding B.V.

Inventor： Alessandra Leonhardt ,  Varun Sharma ,  Vivek Koladi Mootheri ,  Leo Lukose ,  Andrea Illiberi ,  Jerome Innocent ,  Aditya Chauhan

IPC: H01L29/06 ,  H01L21/02 ,  H01L29/778

CPC classification number: H01L29/0607 ,  H01L21/02362 ,  H01L28/75 ,  H01L29/7786

Abstract: Structures and related methods and systems for forming structures. The structures comprise a proximal contact, a distal contact, a high-k dielectric, and at least one of a proximal barrier and a distal barrier. In some embodiments, at least one of the proximal barrier and the distal barrier is constructed and arranged to inhibit Poole-Frenkel emission from the high-k dielectric when a first electric field is applied between the proximal contact and a distal contact in a first electric field direction.

公开(公告)号：US20250113489A1

公开(公告)日：2025-04-03

申请号：US18903866

申请日：2024-10-01

Applicant: ASM IP Holding B.V.

Inventor： Ranjith Karuparambil Ramachandran ,  Vivek Koladi Mootheri ,  Andrea IIliberi ,  Charles Dezelah

IPC: H10B43/30 ,  H01L29/167 ,  H10B41/20 ,  H10B41/30

Abstract: Aspects of the disclosure generally relate to the field of semiconductor devices, and more particularly, a memory element comprising a charge trapping layer and systems and methods for producing the same. The method for forming a charge trapping layer of a memory element, comprises the steps of: providing a substrate into a reaction chamber; executing one or more cycles, a cycle comprising a hafnium precursor pulse; optionally, a zirconium precursor pulse; an oxygen reactant pulse; a germanium dopant pulse; and wherein, as a result of the one or more cycles, a charge trapping layer comprising one or more germanium-doped hafnium oxide (HfO2) film and/or one or more germanium-doped hafnium zirconium oxide (HZO) film is formed on the substrate.

公开(公告)号：US20240191347A1

公开(公告)日：2024-06-13

申请号：US18535440

申请日：2023-12-11

Applicant: ASM IP Holding B.V.

Inventor： Monica Thukkaram ,  Aditya Chauhan ,  Andrea Illiberi ,  Vivek Koladi Mootheri ,  Leo Lukose ,  Alessandra Leonhardt ,  Michael Eugene Givens

IPC: C23C16/40 ,  C23C16/455

CPC classification number: C23C16/407 ,  C23C16/403 ,  C23C16/45527 ,  C23C16/45553

Abstract: Methods and related solids and systems are described. In some embodiments, methods as described herein can comprise executing a plurality of super cycles. Ones from the plurality of super cycles can comprise a magnesium sub cycle, an aluminum sub cycle, and a zinc sub cycle. At least one super cycle can comprise more than one magnesium sub cycle, aluminum sub cycle, or zinc sub cycle. Thus, layers having a tunable magnesium, aluminum, or zinc composition can be formed.