公开(公告)号：US12025484B2

公开(公告)日：2024-07-02

申请号：US16398126

申请日：2019-04-29

Applicant: ASM IP Holding B.V.

Inventor： YoungJae Kim ,  YoungHoon Kim

IPC: G01F7/00 ,  G01F1/40 ,  G01F1/78

CPC classification number: G01F7/005 ,  G01F1/40 ,  G01F1/78

Abstract: A thin film forming method includes: a first operation of supplying a source gas at a first flow rate into a reactor; a second operation of purging the source gas in the reactor to an exhaust unit; a third operation of supplying a reactive gas at a second flow rate into the reactor; a fourth operation of supplying plasma into the reactor; and a fifth operation of purging the reactive gas in the reactor to the exhaust unit, wherein, during the second to fifth operations, the source gas is bypassed to the exhaust unit, and a flow rate of the source gas bypassed to the exhaust unit is less than the first flow rate. According to the thin film forming method, the consumption of the source gas and the reactive gas may be reduced, and the generation of reaction by-products in the exhaust unit may be minimized.

公开(公告)号：US11530483B2

公开(公告)日：2022-12-20

申请号：US16445096

申请日：2019-06-18

Applicant: ASM IP Holding B.V.

Inventor： YoonKi Min ,  YoungHoon Kim ,  HakJoo Lee ,  SeungJu Chun

IPC: C23C16/46 ,  H01L21/677 ,  C23C16/52 ,  H01L21/67

Abstract: Provided is a substrate processing system for improving productivity of processes. In this regard, the substrate processing system includes: a first chamber providing a space where at least one substrate is accommodated; a second chamber configured to transfer at least one substrate to the first chamber; and a temperature control unit configured to change a temperature of a gas in the second chamber.

公开(公告)号：US11551925B2

公开(公告)日：2023-01-10

申请号：US16828885

申请日：2020-03-24

Applicant: ASM IP Holding B.V.

Inventor： HeeSung Kang ,  YoonKi Min ,  WanGyu Lim ,  JinGeun Yu ,  JaeOk Ko ,  YoungHoon Kim

IPC: H01L21/02 ,  H01L21/311

Abstract: A substrate processing method with an improved etch selectivity includes: a first operation for forming a film on a stepped structure having a top surface, a bottom surface, and a side surface connecting the top surface and the bottom surface, wherein a first atmosphere is set to reduce a mean free path of plasma ions and to cause the plasma ions to have no directionality; and a second operation for changing a bonding structure of a portion of the film, wherein a second atmosphere is set to cause the plasma ions to have directionality, wherein the first operation is repeated a plurality of times, the second operation is performed for a predetermined time period, the first operation and the second operation form a group cycle, and the group cycle is repeated by a plurality of times.

公开(公告)号：US20210035854A1

公开(公告)日：2021-02-04

申请号：US16932707

申请日：2020-07-18

Applicant: ASM IP Holding B.V.

Inventor： TaeHee Yoo ,  YoungHoon Kim ,  SeWoong Jung

IPC: H01L21/762 ,  H01L21/311 ,  H01L21/02

Abstract: Methods of forming structures that include a step of treating a layer to remove residual etchant compounds, such as fluorine, are disclosed. Exemplary methods can be used to fill features on a surface of a substrate during a device manufacturing process.

公开(公告)号：US20200312652A1

公开(公告)日：2020-10-01

申请号：US16828885

申请日：2020-03-24

Applicant: ASM IP Holding B.V.

Inventor： HeeSung Kang ,  YoonKi Min ,  WanGyu Lim ,  JinGeun Yu ,  JaeOk Ko ,  YoungHoon Kim

IPC: H01L21/02 ,  H01L21/311

Abstract: A substrate processing method with an improved etch selectivity includes: a first operation for forming a film on a stepped structure having a top surface, a bottom surface, and a side surface connecting the top surface and the bottom surface, wherein a first atmosphere is set to reduce a mean free path of plasma ions and to cause the plasma ions to have no directionality; and a second operation for changing a bonding structure of a portion of the film, wherein a second atmosphere is set to cause the plasma ions to have directionality, wherein the first operation is repeated a plurality of times, the second operation is performed for a predetermined time period, the first operation and the second operation form a group cycle, and the group cycle is repeated by a plurality of times.

公开(公告)号：US20190390343A1

公开(公告)日：2019-12-26

申请号：US16445096

申请日：2019-06-18

Applicant: ASM IP Holding B.V.

Inventor： YoonKi Min ,  YoungHoon Kim ,  HakJoo Lee ,  SeungJu Chun

IPC: C23C16/46 ,  H01L21/67 ,  C23C16/52 ,  H01L21/677

Abstract: Provided is a substrate processing system for improving productivity of processes. In this regard, the substrate processing system includes: a first chamber providing a space where at least one substrate is accommodated; a second chamber configured to transfer at least one substrate to the first chamber; and a temperature control unit configured to change a temperature of a gas in the second chamber.

公开(公告)号：US11823866B2

公开(公告)日：2023-11-21

申请号：US17217514

申请日：2021-03-30

Applicant: ASM IP Holding B.V.

Inventor： SungKyu Kang ,  JongWan Choi ,  YoungHoon Kim ,  HieChul Kim ,  KyungEun Lee ,  TaeHee Yoo

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/762

CPC classification number: H01J37/32174 ,  H01L21/02274 ,  H01L21/02208 ,  H01L21/76224

Abstract: A substrate processing method for filling a gap without seams or voids comprising: providing a substrate with a gap in a reaction chamber, pumping down the reaction chamber to a pressure at or below 5 Torr and filling the gap with a film by alternately and sequentially supplying a precursor, a reactant and a radio frequency electromagnetic radiation comprising a relatively high radio frequency component and a relatively low radio frequency component.

公开(公告)号：US20210313150A1

公开(公告)日：2021-10-07

申请号：US17217514

申请日：2021-03-30

Applicant: ASM IP Holding B.V.

Inventor： SungKyu Kang ,  JongWan Choi ,  YoungHoon Kim ,  HieChul Kim ,  KyungEun Lee ,  TaeHee Yoo

IPC: H01J37/32 ,  H01L21/02

Abstract: A substrate processing method for filling a gap without seams or voids comprising: providing a substrate with a gap in a reaction chamber, pumping down the reaction chamber to a pressure at or below 5 Torr and filling the gap with a film by alternately and sequentially supplying a precursor, a reactant and a radio frequency electromagnetic radiation comprising a relatively high radio frequency component and a relatively low radio frequency component.