公开(公告)号：US12272593B2

公开(公告)日：2025-04-08

申请号：US18380981

申请日：2023-10-17

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore

IPC: H01L21/762 ,  C23C16/04 ,  C23C16/455 ,  H01L21/02

Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber; introducing a first reactant, to form first active species, for a first pulse time to the substrate; introducing a second reactant for a second pulse time to the substrate; and introducing a third reactant, to form second active species, for a third pulse time to the substrate. An apparatus for filling a recess is also disclosed and a structure formed using the method and/or apparatus is disclosed.

公开(公告)号：US20240361695A1

公开(公告)日：2024-10-31

申请号：US18644370

申请日：2024-04-24

Applicant: ASM IP Holding B.V.

Inventor： João Ricardo Antunes Afonso ,  Yiting Sun ,  Fanyong Ran ,  Jerome Samuel Nicolas ,  Zecheng Liu

IPC: G03F7/16 ,  G03F7/004 ,  G03F7/075

CPC classification number: G03F7/167 ,  G03F7/0043 ,  G03F7/0751 ,  G03F7/0755

Abstract: Methods of forming structures including an adhesion layer and structures including the adhesion layer are disclosed. The adhesion layer may include nitrogen. The method can include forming a metal oxide resist overlying and in contact with the adhesion layer. Exemplary methods further include forming the photoresist underlayer.

公开(公告)号：US20230162971A1

公开(公告)日：2023-05-25

申请号：US17990776

申请日：2022-11-21

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/02104 ,  C23C16/401 ,  C23C16/45536

Abstract: Methods for depositing SiOC and SiOCN films are disclosed. Exemplary methods utilize precursors containing iodine and alkoxide, and can be used to form low-k spacers using O-free PEALD.

公开(公告)号：US11615980B2

公开(公告)日：2023-03-28

申请号：US17544982

申请日：2021-12-08

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Zecheng Liu

IPC: H01L21/762 ,  H01L29/06 ,  H01L21/67 ,  H01J37/32

Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, introducing a second reactant to the substrate with a second dose, wherein the first and the second doses overlap in an overlap area where the first and second reactants react and leave an initially substantially unreacted area where the first and the second areas do not overlap; introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant to form deposited material; and etching the deposited material. An apparatus for filling a recess is also disclosed.

公开(公告)号：US20220108915A1

公开(公告)日：2022-04-07

申请号：US17491684

申请日：2021-10-01

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore ,  Tommi Paavo Tynell ,  Yu Xu ,  Mikko Ruoho

IPC: H01L21/768 ,  H01L21/02 ,  H01J37/32

Abstract: The current disclosure relates to methods of depositing silicon-containing material on a substrate comprising a gap, wherein the method comprises providing the substrate in a reaction chamber and depositing a carbon-containing inhibition layer on the substrate, and depositing silicon-containing material on the substrate. Depositing the inhibition layer comprises supplying a carbon precursor comprising carbon in the reaction chamber and supplying first plasma in the reaction chamber to form a first reactive species from the carbon precursor for forming the inhibition layer on the substrate. The inhibition layer is deposited preferentially in the vicinity of the top of the gap. The disclosure further relates to methods of forming a structure, methods of manufacturing a device and to a semiconductor processing apparatus.

公开(公告)号：US20220102195A1

公开(公告)日：2022-03-31

申请号：US17544982

申请日：2021-12-08

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Zecheng Liu

IPC: H01L21/762 ,  H01L21/67 ,  H01J37/32 ,  H01L29/06

Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, introducing a second reactant to the substrate with a second dose, wherein the first and the second doses overlap in an overlap area where the first and second reactants react and leave an initially substantially unreacted area where the first and the second areas do not overlap; introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant to form deposited material; and etching the deposited material. An apparatus for filling a recess is also disclosed.

公开(公告)号：US20200266098A1

公开(公告)日：2020-08-20

申请号：US16792571

申请日：2020-02-17

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Zecheng Liu

IPC: H01L21/762 ,  H01L21/67 ,  H01L29/06 ,  H01J37/32

Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, introducing a second reactant to the substrate with a second dose, wherein the first and the second doses overlap in an overlap area where the first and second reactants react and leave an initially substantially unreacted area where the first and the second areas do not overlap; introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant to form deposited material; and etching the deposited material. An apparatus for filling a recess is also disclosed.

公开(公告)号：US20240047264A1

公开(公告)日：2024-02-08

申请号：US18380981

申请日：2023-10-17

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore

IPC: H01L21/762 ,  H01L21/02 ,  C23C16/04 ,  C23C16/455

CPC classification number: H01L21/76224 ,  H01L21/02274 ,  C23C16/04 ,  C23C16/45536 ,  C23C16/45544 ,  H01L21/0228

Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber; introducing a first reactant, to form first active species, for a first pulse time to the substrate; introducing a second reactant for a second pulse time to the substrate; and introducing a third reactant, to form second active species, for a third pulse time to the substrate. An apparatus for filling a recess is also disclosed and a structure formed using the method and/or apparatus is disclosed.

公开(公告)号：US20230235453A1

公开(公告)日：2023-07-27

申请号：US18149744

申请日：2023-01-04

Applicant: ASM IP Holding B.V.

Inventor： Takashi Yoshida ,  Kai Okabe ,  Zecheng Liu

IPC: C23C16/40 ,  C23C16/513

CPC classification number: C23C16/401 ,  C23C16/513

Abstract: Methods of forming a silicon oxycarbide layer on a surface of a substrate are disclosed. Exemplary methods include providing an oxygen-free reactant to a reaction chamber and performing one or more deposition cycles, wherein each deposition cycle includes providing a silicon precursor to the reaction chamber for a silicon precursor pulse period and providing pulsed plasma power for a plasma power period to form the silicon oxycarbide layer.

公开(公告)号：US20220350248A1

公开(公告)日：2022-11-03

申请号：US17724457

申请日：2022-04-19

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Takashi Yoshida ,  Tomohiro Kubota ,  Hideaki Fukuda

IPC: G03F7/11 ,  H01L21/033 ,  H01J37/32 ,  C23C16/455 ,  C23C16/02 ,  C23C16/50 ,  C23C16/52

Abstract: Methods of forming structures including a photoresist underlayer and an adhesion layer and structures including the photoresist underlayer and adhesion layer are disclosed. Exemplary methods include forming the photoresist underlayer and forming an adhesion layer using a cyclical deposition process. The adhesion layer can be formed within the same reaction chamber used to form the photoresist underlayer.