公开(公告)号：EP1237177A3

公开(公告)日：2004-10-06

申请号：EP02250927.7

申请日：2002-02-11

Applicant: ASM JAPAN K.K.

Inventor： Shimizu, Akira ,  Nanba, Kunitoshi

IPC: H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32192

Abstract: A batch-type etching device and a method, which enable a stable process with high reproducibility by preventing contamination of CVD equipment by effectively removing H 2 O, CH 3 OH or CH 3 COOH and byproducts adsorbing and remaining on the surface of a semiconductor wafer after etching is completed, are provided. The device comprises a reaction chamber (1), an exhaust port (5) for evacuating the air inside the reaction chamber, a wafer-supporting boat (2) for supporting at least one batch of semiconductor wafers (4) inside the reaction chamber, a gas inlet port (3) for introducing a reaction gas into the reaction chamber, and a microwave generator (11). The microwave generator is adapted to introduce microwaves into reaction chamber so that substances which adsorb and remain on the semiconductor wafers are desorbed and removed after etching is completed.

公开(公告)号：EP1237177A2

公开(公告)日：2002-09-04

申请号：EP02250927.7

申请日：2002-02-11

Applicant: ASM JAPAN K.K.

Inventor： Shimizu, Akira ,  Nanba, Kunitoshi

IPC: H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32192

Abstract: A batch-type etching device and a method, which enable a stable process with high reproducibility by preventing contamination of CVD equipment by effectively removing H 2 O, CH 3 OH or CH 3 COOH and byproducts adsorbing and remaining on the surface of a semiconductor wafer after etching is completed, are provided. The device comprises a reaction chamber, an exhaust port for evacuating the air inside the reaction chamber, a wafer-supporting boat for supporting at least one batch of semiconductor wafers inside the reaction chamber, a gas inlet port for introducing a reaction gas into the reaction chamber, and a microwave generator. The microwave generator is adapted to introduce microwaves into reaction chamber so that substances which adsorb and remain on the semiconductor wafers are desorbed and removed after etching is completed.

Abstract translation: 分批式蚀刻装置和方法能够通过有效地除去H 2 O，CH 3 OH或CH 3 COOH以及蚀刻后的半导体晶片表面上残留的副产物来防止CVD设备的污染而具有高再现性的稳定的工艺。 提供。 该装置包括反应室（1），用于抽空反应室内的空气的排气口（5），用于在反应室内支撑至少一批半导体晶片（4）的晶片支撑船（2） 用于将反应气体引入反应室的气体入口（3）和微波发生器（11）。 微波发生器适于将微波引入反应室，使得在蚀刻完成之后吸附并保留在半导体晶片上的物质被解吸和去除。