公开(公告)号：EP1168425A3

公开(公告)日：2006-02-08

申请号：EP01305281.6

申请日：2001-06-18

Applicant: ASM JAPAN K.K.

Inventor： Shimizu, Akira ,  Ozaki, Fumitoshi

IPC: H01L21/311 ,  H01L21/764 ,  H01L21/768

CPC classification number: H01L21/76807 ,  H01L21/31116 ,  H01L21/31629 ,  H01L21/7682 ,  H01L21/76829 ,  H01L23/5222 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of processing a semiconductor substrate involves etching a SiOF layer with HF or HF + H 2 0. The method can be used to form hollow structures in semiconductor substrates and thus provides a way to make interlayer insulators.

公开(公告)号：EP1352990A1

公开(公告)日：2003-10-15

申请号：EP03252345.8

申请日：2003-04-14

Applicant: ASM JAPAN K.K.

Inventor： Shimizu, Akira ,  Fukuda, Hideaki ,  Kawano, Baiei ,  Sato, Kazuo

IPC: C23C16/458 ,  H01L21/00 ,  C23C16/54

CPC classification number: C23C16/45521 ,  C23C16/4409 ,  C23C16/4412 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/4585 ,  C23C16/54

Abstract: A single-wafer-processing type CVD apparatus includes: (a) a reaction chamber including: (i) a susceptor (8) having at least one gas discharge hole (9) to flow a gas into the reaction chamber (12) via a back side and a periphery of the wafer into the reaction chamber; (ii) a showerhead (3); (iii) an exhaust duct (4) positioned in the vicinity of the showerhead and provided circularly along an inner wall of the reaction chamber; and (iv) a circular separation plate (5) provided coaxially with the exhaust duct to form a clearance (15) with the bottom of the exhaust duct; and (b) a temperature-controlling apparatus for regulating the temperature of the showerhead. The separation plate has a sealing portion to seal a periphery of the susceptor and to separate the reaction chamber from a wafer-handling chamber when the susceptor rises.

Abstract translation: 单晶加工型CVD装置包括：（a）反应室，包括：（i）具有至少一个气体排出孔（9）的基座（8），用于将气体经由 背面和晶片的周边进入反应室; （ii）喷头（3）; （iii）位于喷头附近并沿着反应室的内壁圆周设置的排气管道（4）; 和（iv）与排气管道同轴设置的圆形分离板（5），以与排气管道的底部形成间隙（15）; 和（b）用于调节喷头温度的温度控制装置。 分离板具有用于密封基座的周边的密封部分，并且当基座升起时将分离反应室与晶片处理室分离。

公开(公告)号：EP1237177A3

公开(公告)日：2004-10-06

申请号：EP02250927.7

申请日：2002-02-11

Applicant: ASM JAPAN K.K.

Inventor： Shimizu, Akira ,  Nanba, Kunitoshi

IPC: H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32192

Abstract: A batch-type etching device and a method, which enable a stable process with high reproducibility by preventing contamination of CVD equipment by effectively removing H 2 O, CH 3 OH or CH 3 COOH and byproducts adsorbing and remaining on the surface of a semiconductor wafer after etching is completed, are provided. The device comprises a reaction chamber (1), an exhaust port (5) for evacuating the air inside the reaction chamber, a wafer-supporting boat (2) for supporting at least one batch of semiconductor wafers (4) inside the reaction chamber, a gas inlet port (3) for introducing a reaction gas into the reaction chamber, and a microwave generator (11). The microwave generator is adapted to introduce microwaves into reaction chamber so that substances which adsorb and remain on the semiconductor wafers are desorbed and removed after etching is completed.

公开(公告)号：EP0841689A2

公开(公告)日：1998-05-13

申请号：EP97203445.8

申请日：1997-11-06

Applicant: ASM JAPAN K.K.

Inventor： Shimizu, Akira ,  Namba, Kunitoshi

IPC: H01L21/00

CPC classification number: H01L21/02054 ,  H01L21/3065 ,  H01L21/67034 ,  Y10S438/905

Abstract: Contamination on semiconductor wafers is eliminated to perform a drying step quickly, thereby improving productivity.
There is provided a method of performing vapor phase etching on semiconductor wafers. The method comprises the steps of etching the semiconductor wafers by introducing a reactive gas into the reaction chamber, restoring the pressure in the reaction chamber to the atmospheric pressure by introducing an inert gas into the reaction chamber, cleaning the semiconductor wafers, drying the semiconductor wafers, and introducing an alcoholic gas into the reaction chamber. The inner wall of the reaction chamber is constantly maintained at a predetermined temperature in the range from 50 °C to 80 °C. Alcohol having a boiling point 10 °C or more lower than the predetermined temperature is chosen.
The use of an inert gas prevents the occurrence of a water mark during a spin drying process. Further, the alcoholic gas selectively acts only on water droplets on the inner wall surface of the chamber to prevent contamination due to organic substances and to allow the time required for drying to be shortened by a factor of about ten.

Abstract translation: 消除半导体晶圆上的污染，迅速进行干燥，提高生产率。 提供了对半导体晶片进行气相蚀刻的方法。 该方法包括以下步骤：通过将反应气体引入反应室来蚀刻半导体晶片，通过向反应室中引入惰性气体，将反应室中的压力恢复到大气压，清洗半导体晶片，干燥半导体晶片 ，并将醇气体引入反应室。 将反应室的内壁恒定地保持在50℃〜80℃的规定温度。选择沸点比预定温度低10℃以上的醇。 使用惰性气体可防止在旋转干燥过程中出现水痕。 此外，醇气体选择性地仅对室内壁表面上的水滴起作用，以防止由于有机物质引起的污染，并使干燥所需的时间缩短约十倍。

公开(公告)号：EP1237177A2

公开(公告)日：2002-09-04

申请号：EP02250927.7

申请日：2002-02-11

Applicant: ASM JAPAN K.K.

Inventor： Shimizu, Akira ,  Nanba, Kunitoshi

IPC: H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32192

Abstract: A batch-type etching device and a method, which enable a stable process with high reproducibility by preventing contamination of CVD equipment by effectively removing H 2 O, CH 3 OH or CH 3 COOH and byproducts adsorbing and remaining on the surface of a semiconductor wafer after etching is completed, are provided. The device comprises a reaction chamber, an exhaust port for evacuating the air inside the reaction chamber, a wafer-supporting boat for supporting at least one batch of semiconductor wafers inside the reaction chamber, a gas inlet port for introducing a reaction gas into the reaction chamber, and a microwave generator. The microwave generator is adapted to introduce microwaves into reaction chamber so that substances which adsorb and remain on the semiconductor wafers are desorbed and removed after etching is completed.

Abstract translation: 分批式蚀刻装置和方法能够通过有效地除去H 2 O，CH 3 OH或CH 3 COOH以及蚀刻后的半导体晶片表面上残留的副产物来防止CVD设备的污染而具有高再现性的稳定的工艺。 提供。 该装置包括反应室（1），用于抽空反应室内的空气的排气口（5），用于在反应室内支撑至少一批半导体晶片（4）的晶片支撑船（2） 用于将反应气体引入反应室的气体入口（3）和微波发生器（11）。 微波发生器适于将微波引入反应室，使得在蚀刻完成之后吸附并保留在半导体晶片上的物质被解吸和去除。

公开(公告)号：EP1168425A2

公开(公告)日：2002-01-02

申请号：EP01305281.6

申请日：2001-06-18

Applicant: ASM JAPAN K.K.

Inventor： Shimizu, Akira ,  Ozaki, Fumitoshi

IPC: H01L21/311 ,  H01L21/764 ,  H01L21/768

CPC classification number: H01L21/76807 ,  H01L21/31116 ,  H01L21/31629 ,  H01L21/7682 ,  H01L21/76829 ,  H01L23/5222 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of processing a semiconductor substrate involves etching a SiOF layer with HF or HF + H 2 O. The method can be used to form hollow structures in semiconductor substrates and thus provides a way to make interlayer insulators.

Abstract translation: 一种处理半导体衬底的方法包括用HF或HF + H 2 O蚀刻SiOF层。该方法可用于在半导体衬底中形成中空结构，从而提供了制造层间绝缘体的方法。

公开(公告)号：EP0841689A3

公开(公告)日：1999-11-17

申请号：EP97203445.8

申请日：1997-11-06

Applicant: ASM JAPAN K.K.

Inventor： Shimizu, Akira ,  Namba, Kunitoshi

IPC: H01L21/00

CPC classification number: H01L21/02054 ,  H01L21/3065 ,  H01L21/67034 ,  Y10S438/905

Abstract: Contamination on semiconductor wafers is eliminated to perform a drying step quickly, thereby improving productivity. There is provided a method of performing vapor phase etching on semiconductor wafers. The method comprises the steps of etching the semiconductor wafers by introducing a reactive gas into the reaction chamber, restoring the pressure in the reaction chamber to the atmospheric pressure by introducing an inert gas into the reaction chamber, cleaning the semiconductor wafers, drying the semiconductor wafers, and introducing an alcoholic gas into the reaction chamber. The inner wall of the reaction chamber is constantly maintained at a predetermined temperature in the range from 50 °C to 80 °C. Alcohol having a boiling point 10 °C or more lower than the predetermined temperature is chosen. The use of an inert gas prevents the occurrence of a water mark during a spin drying process. Further, the alcoholic gas selectively acts only on water droplets on the inner wall surface of the chamber to prevent contamination due to organic substances and to allow the time required for drying to be shortened by a factor of about ten.

公开(公告)号：EP1162652A3

公开(公告)日：2007-08-29

申请号：EP01304740.2

申请日：2001-05-30

Applicant: ASM JAPAN K.K.

Inventor： Shimizu, Akira ,  Shimizu, Mikio

IPC: H01L21/00

CPC classification number: H01L21/67017 ,  C23C16/455 ,  C23C16/45578

Abstract: A batch-processing type semiconductor-manufacturing device includes a cylindrical reaction chamber with its upper end closed and its bottom end open, a substrate-supporting boat loading multiple substrates, which are inserted within the reaction chamber, and an injector for spraying a reaction gas to the substrates, which injector is provided parallel to the substrate-supporting boat within the reaction chamber. The injector is supported by an injector holder, and both the injector and the injector holder are fitted by a male-female fitting structure.

公开(公告)号：EP1352990B1

公开(公告)日：2006-12-13

申请号：EP03252345.8

申请日：2003-04-14

Applicant: ASM JAPAN K.K.

Inventor： Shimizu, Akira ,  Fukuda, Hideaki ,  Kawano, Baiei ,  Sato, Kazuo

IPC: C23C16/458 ,  H01L21/00 ,  C23C16/54

CPC classification number: C23C16/45521 ,  C23C16/4409 ,  C23C16/4412 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/4585 ,  C23C16/54

公开(公告)号：EP1162652A2

公开(公告)日：2001-12-12

申请号：EP01304740.2

申请日：2001-05-30

Applicant: ASM JAPAN K.K.

Inventor： Shimizu, Akira ,  Shimizu, Mikio

IPC: H01L21/00

CPC classification number: H01L21/67017 ,  C23C16/455 ,  C23C16/45578

Abstract: A batch-processing type semiconductor-manufacturing device includes a cylindrical reaction chamber with its upper end closed and its bottom end open, a substrate-supporting boat loading multiple substrates, which are inserted within the reaction chamber, and an injector for spraying a reaction gas to the substrates, which injector is provided parallel to the substrate-supporting boat within the reaction chamber. The injector is supported by an injector holder, and both the injector and the injector holder are fitted by a male-female fitting structure.

Abstract translation: 批处理型半导体制造装置包括其上端封闭并且其底端打开的圆柱形反应室，装载在反应室内的多个基板的基板支撑船，以及用于喷射反应气体的喷射器 将该注射器平行于反应室内的衬底支撑的舟皿提供给衬底。 注射器由注射器保持器支撑，并且注射器和注射器保持器都由阳 - 阴配件结构安装。