公开(公告)号：EP1452625A3

公开(公告)日：2008-08-06

申请号：EP03019814.7

申请日：2003-08-30

Applicant: ASM JAPAN K.K.

Inventor： Loke Chou San, Nelson ,  Kagami, Kenishi ,  Satoh, Kiyoshi

IPC: C23C16/44 ,  C23C16/448 ,  C23C16/32

CPC classification number: H01L21/02126 ,  C23C16/4405 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/314 ,  H01L21/31633 ,  Y10S438/905

Abstract: The present invention relates to a method of cleaning a CVD reaction chamber used for depositing a carbon-containing film onto a semiconductor substrate comprising contacting the CVD reaction chamber with an active oxygen species

公开(公告)号：EP1452625A2

公开(公告)日：2004-09-01

申请号：EP03019814.7

申请日：2003-08-30

Applicant: ASM JAPAN K.K.

Inventor： Loke Chou San, Nelson ,  Kagami, Kenishi ,  Satoh, Kiyoshi

IPC: C23C16/44 ,  C23C16/448 ,  C23C16/32

CPC classification number: H01L21/02126 ,  C23C16/4405 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/314 ,  H01L21/31633 ,  Y10S438/905

Abstract: The present invention relates to a method of cleaning a CVD reaction chamber used for depositing a carbon-containing film onto a semiconductor substrate comprising contacting the CVD reaction chamber with an active oxygen species

Abstract translation: 本发明涉及一种清洗用于将含碳膜沉积到半导体衬底上的CVD反应室的方法，包括使CVD反应室与活性氧物质接触

公开(公告)号：EP1523034A2

公开(公告)日：2005-04-13

申请号：EP04024168.9

申请日：2004-10-11

Applicant: ASM JAPAN K.K.

Inventor： Goundar, Kamal Kishore ,  Satoh, Kiyoshi

IPC: H01L21/314 ,  C23C16/32

CPC classification number: H01L21/02167 ,  C23C16/325 ,  C23C16/45523 ,  C23C16/5096 ,  C30B25/105 ,  C30B29/36 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/3148 ,  H01L21/76807 ,  H01L21/76828 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a silicon carbide film on a semiconductor substrate by plasma CVD includes: introducing a raw material gas containing silicon, carbon, and hydrogen, an inert gas, and optionally an hydrogen source gas, into a reaction chamber at a predetermined mixing formulation of the raw material gas to the inert gas; applying radio-frequency power at the mixing formulation, thereby forming a curable silicon carbide film having a dielectric constant of about 4.0 or higher; and continuously applying radio-frequency power at a mixing formulation reducing the raw material gas and the hydrogen source gas if any, thereby curing the silicon carbide film to give a dielectric constant and a leakage current lower than those of the curable silicon carbide film.

Abstract translation: 通过等离子体CVD在半导体衬底上形成碳化硅膜的方法包括：以预定的混合配方将含有硅，碳和氢的原料气体，惰性气体和任选的氢源气体引入反应室 的原料气到惰性气体中; 在混合配方中施加射频功率，从而形成介电常数为约4.0或更高的可固化碳化硅膜; 并且在减少原料气体和氢源气体的混合配方中连续施加射频功率，从而使碳化硅膜固化，使介电常数和漏电流低于可固化碳化硅膜的电流。

公开(公告)号：EP1523034A3

公开(公告)日：2006-01-11

申请号：EP04024168.9

申请日：2004-10-11

Applicant: ASM JAPAN K.K.

Inventor： Goundar, Kamal Kishore ,  Satoh, Kiyoshi

IPC: H01L21/314 ,  C23C16/32

CPC classification number: H01L21/02167 ,  C23C16/325 ,  C23C16/45523 ,  C23C16/5096 ,  C30B25/105 ,  C30B29/36 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/3148 ,  H01L21/76807 ,  H01L21/76828 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a silicon carbide film on a semiconductor substrate by plasma CVD includes: introducing a raw material gas containing silicon, carbon, and hydrogen, an inert gas, and optionally an hydrogen source gas, into a reaction chamber at a predetermined mixing formulation of the raw material gas to the inert gas; applying radio-frequency power at the mixing formulation, thereby forming a curable silicon carbide film having a dielectric constant of about 4.0 or higher; and continuously applying radio-frequency power at a mixing formulation reducing the raw material gas and the hydrogen source gas if any, thereby curing the silicon carbide film to give a dielectric constant and a leakage current lower than those of the curable silicon carbide film.

公开(公告)号：EP1127957A1

公开(公告)日：2001-08-29

申请号：EP00311790.0

申请日：2000-12-29

Applicant: ASM JAPAN K.K.

Inventor： Fukuda, Hideaki ,  Satoh, Kiyoshi

IPC: C23C16/44

CPC classification number: C23C16/4405

Abstract: A thin-film forming apparatus includes: (a) a reaction chamber (2) for forming a thin film on a workpiece (9) placed on a susceptor (3) provided in the reaction chamber; and (b) a cleaning device (30) for cleaning unwanted deposits adhering to the inside of the reaction chamber at predetermined intervals. The cleaning device includes: (i) a cleaning gas controller (15,21) for introducing a cleaning gas into the reaction chamber and evacuating the reaction chamber after the cleaning treatment; (ii) a cleaning gas activator (16) for activating the cleaning gas in radical form; and (iii) a temperature and timing controller programmed to reduce the temperature of the susceptor at a predetermined rate for cleaning after completion of film formation and then to actuate the cleaning gas controller and the cleaning gas activator.

Abstract translation: 薄膜形成装置包括：（a）用于在设置在反应室中的基座（3）上的工件（9）上形成薄膜的反应室（2）; 和（b）清洁装置（30），用于以预定间隔清洁附着在反应室内部的不需要的沉积物。 清洁装置包括：（i）清洁气体控制器（15,21），用于将清洁气体引入反应室并在清洁处理之后抽空反应室; （ii）用于以自由基形式活化清洁气体的清洁气体活化剂（16） 以及（iii）温度和时序控制器，其被编程为在成膜完成之后以预定的速率降低基座的温度，然后启动清洁气体控制器和清洁气体激活器。

公开(公告)号：EP1118692A1

公开(公告)日：2001-07-25

申请号：EP01300413.0

申请日：2001-01-18

Applicant: ASM JAPAN K.K.

Inventor： Satoh, Kiyoshi ,  Sato, Kazuo ,  Fukuda, Hideaki

IPC: C23C16/452 ,  C23C16/44

CPC classification number: H01J37/32357 ,  C23C16/4405 ,  C23C16/452 ,  H01J37/32862

Abstract: A plasma CVD device (1, 30, 110) includes a reaction chamber (2, 112), a remote plasma discharge chamber (13) that is provided remotely from the reaction chamber (2, 112), and piping (14) that links the reaction chamber (2, 112) and the remote plasma discharge chamber (13). The remote plasma discharge chamber (13) activates cleaning gas by plasma discharge energy, and the activated cleaning gas is introduced into the inside of the reaction chamber (2, 112) through the piping (14) and changes solid substances that adhere to the inside of the reaction chamber (2, 112) in consequence of film formation, to gaseous substances, thereby cleaning the inside of the reaction chamber. The device is characterized by at least one of the following: (a) the remote plasma discharge chamber (13) generates active species using radio frequency oscillating output energy of a preselected frequency; (b) the piping (14) is made of materials that are not corroded by the active species; or (c) the piping (14) is provided with a through-flow type valve (15).

Abstract translation: 等离子体CVD装置（1，30,110）包括反应室（2,112），远离等离子体放电室（13），其远离反应室（2,112）设置;以及管道（14），其连接 反应室（2,112）和远程等离子体放电室（13）。 远程等离子体放电室（13）通过等离子体放电能量激活清洁气体，并且通过管道（14）将活化的清洁气体引入反应室（2,112）的内部，并且改变附着在内部的固体物质 的反应室（2,112）由于成膜而形成气态物质，从而清洁反应室的内部。 该装置的特征在于以下至少之一：（a）远程等离子体放电室（13）使用预选频率的射频振荡输出能量产生活动物质; （b）管道（14）由未被活性物质腐蚀的材料制成; 或（c）管道（14）设有通流型阀（15）。