公开(公告)号：EP1081756A2

公开(公告)日：2001-03-07

申请号：EP00203022.9

申请日：2000-08-30

Applicant: ASM JAPAN K.K.

Inventor： Fukuda, Hideaki ,  Arai, Hiroki

IPC: H01L21/318 ,  C23C16/34

CPC classification number: H01L21/3185 ,  C23C16/308 ,  C23C16/345 ,  Y10S438/909

Abstract: A method for producing a plasma silicon nitride series film with a small heat load having a low hydrogen concentration is provided. The method is for producing a silicon nitride series film on a material to be treated using a plasma CVD apparatus having a reaction chamber evacuated to vacuum. The method comprises the steps of introducing a monosilane gas (SiH 4 ) and a nitrogen gas (N 2 ) as raw material gases into the reaction chamber at prescribed flow rates, and heating the material to be treated to a prescribed temperature. At this time, it is characterized in that the flow rate of the nitrogen gas is at least 100 times the flow rate of the monosilane gas.

Abstract translation: 提供了具有低氢浓度的小热负荷的等离子体氮化硅系膜的制造方法。 该方法是使用具有抽真空的反应室的等离子体CVD装置在待处理材料上制造氮化硅系列膜。 该方法包括以规定的流量将作为原料气体的甲硅烷气体（SiH4）和氮气（N2）引入反应室的步骤，将待处理物质加热至规定温度。 此时，其特征在于，氮气的流量为甲硅烷气体的流量的100倍以上。

公开(公告)号：EP1352990B1

公开(公告)日：2006-12-13

申请号：EP03252345.8

申请日：2003-04-14

Applicant: ASM JAPAN K.K.

Inventor： Shimizu, Akira ,  Fukuda, Hideaki ,  Kawano, Baiei ,  Sato, Kazuo

IPC: C23C16/458 ,  H01L21/00 ,  C23C16/54

CPC classification number: C23C16/45521 ,  C23C16/4409 ,  C23C16/4412 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/4585 ,  C23C16/54

公开(公告)号：EP1138801B1

公开(公告)日：2004-08-11

申请号：EP01302548.1

申请日：2001-03-19

Applicant: ASM JAPAN K.K.

Inventor： Fukuda, Hideaki ,  Arai, Hiroki

IPC: C23C16/44 ,  C23C16/458

CPC classification number: C23C16/4581 ,  C23C16/4404

公开(公告)号：EP1315194A3

公开(公告)日：2006-10-04

申请号：EP02258147.4

申请日：2002-11-27

Applicant: ASM JAPAN K.K.

Inventor： Fukuda, Hideaki

IPC: H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32743 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/4557 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32788 ,  H01J37/32862 ,  H01J2237/3321

Abstract: A plasma CVD apparatus conducting self-cleaning comprises a reaction chamber, a susceptor, a showerhead, a temperature controlling mechanism for directly controlling the temperature of the showerhead at a temperature of 200°C to 400°C, a remote plasma discharge device provided outside the reaction chamber, and a radio-frequency power source electrically connected to either of the susceptor or the showerhead.

公开(公告)号：EP1315194A2

公开(公告)日：2003-05-28

申请号：EP02258147.4

申请日：2002-11-27

Applicant: ASM JAPAN K.K.

Inventor： Fukuda, Hideaki

IPC: H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32743 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/4557 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32788 ,  H01J37/32862 ,  H01J2237/3321

Abstract: A plasma CVD apparatus conducting self-cleaning comprises a reaction chamber, a susceptor, a showerhead, a temperature controlling mechanism for directly controlling the temperature of the showerhead at a temperature of 200°C to 400°C, a remote plasma discharge device provided outside the reaction chamber, and a radio-frequency power source electrically connected to either of the susceptor or the showerhead.

Abstract translation: 进行自清洁的等离子体CVD装置包括反应室，基座，喷头，用于在200℃至400℃的温度下直接控制喷头的温度的温度控制机构，设置在外部的远程等离子体放电装置 反应室和电连接到基座或喷头之一的射频电源。

公开(公告)号：EP1118692A1

公开(公告)日：2001-07-25

申请号：EP01300413.0

申请日：2001-01-18

Applicant: ASM JAPAN K.K.

Inventor： Satoh, Kiyoshi ,  Sato, Kazuo ,  Fukuda, Hideaki

IPC: C23C16/452 ,  C23C16/44

CPC classification number: H01J37/32357 ,  C23C16/4405 ,  C23C16/452 ,  H01J37/32862

Abstract: A plasma CVD device (1, 30, 110) includes a reaction chamber (2, 112), a remote plasma discharge chamber (13) that is provided remotely from the reaction chamber (2, 112), and piping (14) that links the reaction chamber (2, 112) and the remote plasma discharge chamber (13). The remote plasma discharge chamber (13) activates cleaning gas by plasma discharge energy, and the activated cleaning gas is introduced into the inside of the reaction chamber (2, 112) through the piping (14) and changes solid substances that adhere to the inside of the reaction chamber (2, 112) in consequence of film formation, to gaseous substances, thereby cleaning the inside of the reaction chamber. The device is characterized by at least one of the following: (a) the remote plasma discharge chamber (13) generates active species using radio frequency oscillating output energy of a preselected frequency; (b) the piping (14) is made of materials that are not corroded by the active species; or (c) the piping (14) is provided with a through-flow type valve (15).

Abstract translation: 等离子体CVD装置（1，30,110）包括反应室（2,112），远离等离子体放电室（13），其远离反应室（2,112）设置;以及管道（14），其连接 反应室（2,112）和远程等离子体放电室（13）。 远程等离子体放电室（13）通过等离子体放电能量激活清洁气体，并且通过管道（14）将活化的清洁气体引入反应室（2,112）的内部，并且改变附着在内部的固体物质 的反应室（2,112）由于成膜而形成气态物质，从而清洁反应室的内部。 该装置的特征在于以下至少之一：（a）远程等离子体放电室（13）使用预选频率的射频振荡输出能量产生活动物质; （b）管道（14）由未被活性物质腐蚀的材料制成; 或（c）管道（14）设有通流型阀（15）。

公开(公告)号：EP1148151A3

公开(公告)日：2004-01-02

申请号：EP01201066.6

申请日：2001-03-22

Applicant: NHK SPRING CO.LTD. ,  ASM JAPAN K.K.

Inventor： Hanamachi, Toshihiko, c/o NHK Spring Co., Ltd. ,  Tachikawa, Toshihiro, c/o NHK Spring Co., Ltd. ,  Fukuda, Hideaki

IPC: C23C16/46 ,  C23C16/458

CPC classification number: H01L21/67103 ,  C23C16/4586 ,  C23C16/46

Abstract: A ceramic cover plate is placed on the surface of a heater typically consisting of a ceramic heater used in a CVD device so as to cover the entire heating surface of the heater, and a silicon wafer 2 is placed on a recessed supporting surface 2a defined by the surface of the cover plate 2. The surface of the ceramic heater is therefore protected by the cover made of a ceramic plate, and the surface of the ceramic heater is prevented from being directly exposed to the gas such as the cleaning gas. Because the corrosion caused by the cleaning gas is limited to the cover, the ceramic heater can be renewed simply by replacing the cover. This substantially reduces the cost for the maintenance work.

公开(公告)号：EP1138801A1

公开(公告)日：2001-10-04

申请号：EP01302548.1

申请日：2001-03-19

Applicant: ASM JAPAN K.K.

Inventor： Fukuda, Hideaki ,  Arai, Hiroki

IPC: C23C16/44 ,  C23C16/458

CPC classification number: C23C16/4581 ,  C23C16/4404

Abstract: In a plasma CVD apparatus including a reaction chamber and a susceptor (3) to form a thin film on a semiconductor substrate, a pretreatment step is conducted to form a surface layer (20) on the surface of the susceptor so that the surface layer can prevent the semiconductor (11) substrate from electrostatically adhering to the surface of the susceptor. The pretreatment step includes steps of introducing into the reaction chamber a gas containing, e.g., the same gas as the gas for use in a film-forming treatment, and forming a surface layer on the susceptor surface by a CVD process.

Abstract translation: 在包括反应室和基座（3），以形成在半导体基板的薄膜的等离子体CVD装置，在预处理步骤中进行，以形成基座的表面上的表面层（20）所以做了表面层可 防止半导体（11）的基板从静电粘附到基座的表面上。 该预处理步骤包括通过CVD工艺引入到反应室中含有气体的，E. G.，相同的气体作为气体用于在膜形成处理的使用，以及在所述基座表面上的表面层的步骤。

公开(公告)号：EP1127957A1

公开(公告)日：2001-08-29

申请号：EP00311790.0

申请日：2000-12-29

Applicant: ASM JAPAN K.K.

Inventor： Fukuda, Hideaki ,  Satoh, Kiyoshi

IPC: C23C16/44

CPC classification number: C23C16/4405

Abstract: A thin-film forming apparatus includes: (a) a reaction chamber (2) for forming a thin film on a workpiece (9) placed on a susceptor (3) provided in the reaction chamber; and (b) a cleaning device (30) for cleaning unwanted deposits adhering to the inside of the reaction chamber at predetermined intervals. The cleaning device includes: (i) a cleaning gas controller (15,21) for introducing a cleaning gas into the reaction chamber and evacuating the reaction chamber after the cleaning treatment; (ii) a cleaning gas activator (16) for activating the cleaning gas in radical form; and (iii) a temperature and timing controller programmed to reduce the temperature of the susceptor at a predetermined rate for cleaning after completion of film formation and then to actuate the cleaning gas controller and the cleaning gas activator.

Abstract translation: 薄膜形成装置包括：（a）用于在设置在反应室中的基座（3）上的工件（9）上形成薄膜的反应室（2）; 和（b）清洁装置（30），用于以预定间隔清洁附着在反应室内部的不需要的沉积物。 清洁装置包括：（i）清洁气体控制器（15,21），用于将清洁气体引入反应室并在清洁处理之后抽空反应室; （ii）用于以自由基形式活化清洁气体的清洁气体活化剂（16） 以及（iii）温度和时序控制器，其被编程为在成膜完成之后以预定的速率降低基座的温度，然后启动清洁气体控制器和清洁气体激活器。

公开(公告)号：EP1081756A3

公开(公告)日：2004-02-11

申请号：EP00203022.9

申请日：2000-08-30

Applicant: ASM JAPAN K.K.

Inventor： Fukuda, Hideaki ,  Arai, Hiroki

IPC: H01L21/318 ,  C23C16/34 ,  C23C16/30

CPC classification number: H01L21/3185 ,  C23C16/308 ,  C23C16/345 ,  Y10S438/909

Abstract: A method for producing a plasma silicon nitride series film with a small heat load having a low hydrogen concentration is provided. The method is for producing a silicon nitride series film on a material to be treated using a plasma CVD apparatus having a reaction chamber evacuated to vacuum. The method comprises the steps of introducing a monosilane gas (SiH 4 ) and a nitrogen gas (N 2 ) as raw material gases into the reaction chamber at prescribed flow rates, and heating the material to be treated to a prescribed temperature. At this time, it is characterized in that the flow rate of the nitrogen gas is at least 100 times the flow rate of the monosilane gas.