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公开(公告)号：US20210165332A1
公开(公告)日：2021-06-03
申请号：US16769534
申请日：2018-12-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Paulus Jacobus Maria VAN ADRICHEM , Ahmad Wasiem Ibrahim EL-SAID , Christoph Rene Konrad Cebulla HENNERKES , Johannes Christiaan Maria JASPER
IPC: G03F7/20
Abstract: A method involving: obtaining a process model of a patterning process that includes or accounts for an average optical aberration of optical systems of a plurality of apparatuses for use with a patterning process; and applying the process model to determine an adjustment to a parameter of the patterning process to account for the average optical aberration.
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