公开(公告)号：WO2020126266A1

公开(公告)日：2020-06-25

申请号：PCT/EP2019/081887

申请日：2019-11-20

Applicant: ASML NETHERLANDS B.V.

Inventor： SOKOLOV, Sergei ,  TARABRIN, Sergey ,  CHENG, Su-Ting ,  KOOLEN, Armand, Eugene, Albert ,  EURLINGS, Markus, Franciscus, Antonius ,  SCHREEL, Koenraad, Remi, André, Maria

IPC: G03F7/20

Abstract: The disclosure relates to measuring a parameter of a patterning process. In one arrangement, a target, formed by the patterning process, is illuminated. A sub-order diffraction component of radiation scattered from the target is detected and used to determine the parameter of the patterning process.

公开(公告)号：WO2019197126A1

公开(公告)日：2019-10-17

申请号：PCT/EP2019/057040

申请日：2019-03-21

Applicant: ASML NETHERLANDS B.V.

Inventor： CHENG, Su-Ting ,  SOKOLOV, Sergei ,  KOOLEN, Armand, Eugene, Albert

IPC: G03F7/20

Abstract: Disclosed is a method of mitigating for a process dependent stray light artifact on a measurement a structure. The method comprises obtaining a calibration scaling factor for the process dependent stray light artifact based on a reference angle resolved measurement and target angle resolved measurement, and a correction of an image with the obtained calibration scaling factor.

公开(公告)号：EP3553603A1

公开(公告)日：2019-10-16

申请号：EP18167216.3

申请日：2018-04-13

Applicant: ASML Netherlands B.V.

Inventor： CHENG, Su-Ting ,  SOKOLOV, Sergei ,  KOOLEN, Armand Eugene Albert

IPC: G03F7/20

Abstract: Disclosed is a method of mitigating for a process dependent stray light artifact on a measurement a structure. The method comprises obtaining a calibration scaling factor for the process dependent stray light artifact based on a reference angle resolved measurement and target angle resolved measurement, and a correction of an image with the obtained calibration scaling factor.

公开(公告)号：EP4224254A1

公开(公告)日：2023-08-09

申请号：EP22155168.2

申请日：2022-02-04

Applicant: ASML Netherlands B.V.

Inventor： KOOLEN, Armand, Eugene, Albert ,  CHENG, Su-Ting ,  CRAMER, Hugo, Augustinus Joseph ,  WANG, Kirsten, Jennifer, Lyhn

IPC: G03F7/20 ,  G03F9/00

Abstract: Disclosed is a method of determining a value for a parameter of interest from a target on a substrate. The method comprises obtaining metrology data comprising single-wavelength parameter of interest values which were obtained using a respective different measurement wavelength; and determining said value for the parameter of interest from a stack sensitivity derived weighted combination of said single-wavelength parameter of interest values. Also disclosed is a method of selecting wavelengths for a measurement based on at least the derivative of the stack sensitivity with respect to wavelength.

公开(公告)号：EP3671346A1

公开(公告)日：2020-06-24

申请号：EP18213270.4

申请日：2018-12-18

Applicant: ASML Netherlands B.V.

Inventor： SOKOLOV, Sergei ,  TARABRIN, Sergey ,  CHENG, Su-Ting ,  KOOLEN, Armand Eugene Albert

IPC: G03F7/20

Abstract: The disclosure relates to measuring a parameter of a patterning process. In one arrangement, a target, formed by the patterning process, is illuminated. A sub-order diffraction component of radiation scattered from the target is detected and used to determine the parameter of the patterning process.