公开(公告)号：WO2020135946A1

公开(公告)日：2020-07-02

申请号：PCT/EP2019/081574

申请日：2019-11-18

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHANG, Quan ,  CHO, Yong-Ju ,  ZHU, Zhangnan ,  HUANG, Boyang ,  CHEN, Been-Der

IPC: G03F1/36 ,  G03F1/70 ,  G03F7/20

Abstract: Described herein is a method for generating a mask pattern to be employed in a patterning process. The method including (P301) obtaining (i) a first feature patch (301) comprising a first polygon portion of an initial mask pattern, and (ii) a second feature patch (302) comprising a second polygon portion of the initial mask pattern; (P303) adjusting the second polygon portion at a patch boundary between the first feature patch and the second feature patch such that a difference between the first polygon portion and the second polygon portion at the patch boundary is reduced; and (P305) combining the first polygon portion and the adjusted second polygon portion at the patch boundary to form the mask pattern (330).