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    METHOD FOR DETERMINING CURVILINEAR PATTERNS FOR PATTERNING DEVICE
    1.
    发明申请
    METHOD FOR DETERMINING CURVILINEAR PATTERNS FOR PATTERNING DEVICE 审中-公开

    公开(公告)号：WO2019179747A1

    公开(公告)日：2019-09-26

    申请号：PCT/EP2019/055067

    申请日：2019-02-28

    Applicant: ASML NETHERLANDS B.V.

    Inventor： ZHANG, Quan ,  CHEN, Been-Der ,  HOWELL, Rafael C. ,  SU, Jing ,  ZOU, Yi ,  LU, Yen-Wen

    IPC: G03F1/36 ,  G03F1/70 ,  G03F7/20 ,  G06F17/50

    Abstract: Described herein is a method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.

    METHOD FOR GENERATING PATTERNING DEVICE PATTERN AT PATCH BOUNDARY
    3.
    发明申请
    METHOD FOR GENERATING PATTERNING DEVICE PATTERN AT PATCH BOUNDARY 审中-公开

    公开(公告)号：WO2020135946A1

    公开(公告)日：2020-07-02

    申请号：PCT/EP2019/081574

    申请日：2019-11-18

    Applicant: ASML NETHERLANDS B.V.

    Inventor： ZHANG, Quan ,  CHO, Yong-Ju ,  ZHU, Zhangnan ,  HUANG, Boyang ,  CHEN, Been-Der

    IPC: G03F1/36 ,  G03F1/70 ,  G03F7/20

    Abstract: Described herein is a method for generating a mask pattern to be employed in a patterning process. The method including (P301) obtaining (i) a first feature patch (301) comprising a first polygon portion of an initial mask pattern, and (ii) a second feature patch (302) comprising a second polygon portion of the initial mask pattern; (P303) adjusting the second polygon portion at a patch boundary between the first feature patch and the second feature patch such that a difference between the first polygon portion and the second polygon portion at the patch boundary is reduced; and (P305) combining the first polygon portion and the adjusted second polygon portion at the patch boundary to form the mask pattern (330).

    METHOD AND SYSTEM FOR PATTERN CONFIGURATION
    5.
    发明申请
    METHOD AND SYSTEM FOR PATTERN CONFIGURATION 审中-公开

    公开(公告)号：WO2018099716A1

    公开(公告)日：2018-06-07

    申请号：PCT/EP2017/079033

    申请日：2017-11-13

    Applicant: ASML NETHERLANDS B.V.

    Inventor： VELLANKI, Venugopal ,  CHEN, Been-Der

    IPC: G03F7/20 ,  G03F1/36 ,  G06F17/50

    Abstract: A method including: obtaining a device design pattern layout having a plurality of design pattern polygons; automatically identifying, by a computer, a unit cell of polygons in the device design pattern layout; identifying a plurality of occurrences of the unit cell within the device design pattern layout to build a hierarchy; and performing, by the computer, an optical proximity correction on the device design pattern layout by repeatedly applying an optical proximity correction designed for the unit cell to the occurrences of the unit cell in the hierarchy.

    PATTERN SELECTION SYSTEMS AND METHODS
    6.
    发明申请
    PATTERN SELECTION SYSTEMS AND METHODS 审中-公开

    公开(公告)号：WO2023046385A1

    公开(公告)日：2023-03-30

    申请号：PCT/EP2022/073313

    申请日：2022-08-22

    Applicant: ASML NETHERLANDS B.V.

    Inventor： LIU, Meng ,  CHEN, Been-Der ,  SHAO, Debao ,  WUU, Jen-Yi ,  CHEN, Hao ,  HAMOUDA, Ayman ,  CHENG, Jianhua

    IPC: G03F1/36 ,  G03F7/20 ,  G06N3/08 ,  G06N20/00

    Abstract: Selecting an optimized, geometrically diverse subset of clips for a design layout for a semiconductor wafer is described. A complete representation of the design layout is received. A set of representative clips of the design layout is determined such that individual representative clips comprise different combinations of one or more unique patterns of the design layout. A subset of the representative clips is selected based on the one or more unique patterns. The subset of the representative clips is configured to include: (1) each geometrically unique pattern in a minimum number of representative clips; or (2) as many geometrically unique patterns of the design layout as possible in a maximum number of representative clips. The subset of representative clips is provided as training data for training an optical proximity correction or source mask optimization semiconductor process machine learning model, for example.

    A MACHINE LEARNING MODEL USING TARGET PATTERN AND REFERENCE LAYER PATTERN TO DETERMINE OPTICAL PROXIMITY CORRECTION FOR MASK
    7.
    发明申请
    A MACHINE LEARNING MODEL USING TARGET PATTERN AND REFERENCE LAYER PATTERN TO DETERMINE OPTICAL PROXIMITY CORRECTION FOR MASK 审中-公开

    公开(公告)号：WO2022179802A1

    公开(公告)日：2022-09-01

    申请号：PCT/EP2022/052213

    申请日：2022-01-31

    Applicant: ASML NETHERLANDS B.V.

    Inventor： ZHANG, Quan ,  CHEN, Been-Der ,  FONG, Wei-chun ,  ZHU, Zhangnan ,  BOONE, Robert, Elliott

    IPC: G03F1/36 ,  G03F7/20

    Abstract: Described are embodiments for generating a post-optical proximity correction (OPC) result for a mask using a target pattern and reference layer patterns. Images of the target pattern and reference layers are provided as an input to a machine learning (ML) model to generate a post-OPC image. The images may be input separately or combined into a composite image (e.g., using a linear function) and input to the ML model. The images are rendered from pattern data. For example, a target pattern image is rendered from a target pattern to be printed on a substrate, and a reference layer image such as dummy pattern image is rendered from dummy pattern. The ML model is trained to generate the post-OPC image using multiple images associated with target patterns and reference layers, and using a reference post-OPC image of the target pattern. The post-OPC image may be used to generate a post-OPC mask.

    METHOD FOR IMPROVING CONSISTENCY IN MASK PATTERN GENERATION
    8.
    发明申请
    METHOD FOR IMPROVING CONSISTENCY IN MASK PATTERN GENERATION 审中-公开

    公开(公告)号：WO2021115766A1

    公开(公告)日：2021-06-17

    申请号：PCT/EP2020/082995

    申请日：2020-11-21

    Applicant: ASML NETHERLANDS B.V.

    Inventor： ZHANG, Quan ,  CHOW, Tatung ,  CHEN, Been-Der ,  LU, Yen-Wen

    IPC: G03F1/36 ,  G03F1/70 ,  G03F7/20 ,  G06N20/00

    Abstract: Described herein is a method (400) of determining a mask pattern for a target pattern to be printed on a substrate. The method includes partitioning (P401) a portion of a design layout (401) including the target pattern into a plurality of cells (402) with reference to a given location on the target pattern; assigning (P403) a plurality of variables (403) within a particular cell of the plurality of cells, the particular cell including the target pattern or a portion thereof; and determining (P405), based on values of the plurality of variables, the mask pattern (405) for the target pattern such that a performance metric of a patterning process utilizing the mask pattern is within a desired performance range.

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