公开(公告)号：US20240256976A1

公开(公告)日：2024-08-01

申请号：US18565759

申请日：2022-06-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun TAO ,  Yu CAO ,  Christopher Alan SPENCE

IPC: G06N20/00 ,  G03F1/36

CPC classification number: G06N20/00 ,  G03F1/36

Abstract: Described herein is a method of determining assist features for a mask pattern. The method includes obtaining (i) a target pattern comprising a plurality of target features, wherein each of the plurality of target features comprises a plurality of target edges, and (ii) a trained sequence-to-sequence machine leaning (ML) model (e.g., long short term memory, Gated Recurrent Units, etc.) configured to determine sub-resolution assist features (SRAFs) for the target pattern. For a target edge of the plurality of target edges, geometric information (e.g., length, width, distances between features, etc.) of a subset of target features surrounding the target edge is determined. Using the geometric information as input, the ML model generates SRAFs to be placed around the target edge.

公开(公告)号：US20240004305A1

公开(公告)日：2024-01-04

申请号：US18039697

申请日：2021-12-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun TAO ,  Yu CAO ,  Christopher Alan SPENCE

IPC: G03F7/00 ,  G03F1/36

CPC classification number: G03F7/70283 ,  G03F1/36

Abstract: A method for determining a mask pattern and a method for training a machine learning model. The method for generating data for a mask pattern associated with a patterning process includes obtaining (i) a first mask image (e.g., CTM) associated with a design pattern, (ii) a contour (e.g., a resist contour) based on the first mask image, (iii) a reference contour (e.g., an ideal resist contour) based on the design pattern; and (iv) a contour difference between the contour and the reference contour. The contour difference and the first mask image are inputted to a model to generate mask image modification data. Based on the first mask image and the mask image modification data, a second mask image is generated for determining a mask pattern to be employed in the patterning process.

公开(公告)号：US20210311384A1

公开(公告)日：2021-10-07

申请号：US17266741

申请日：2019-08-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Christopher Alan SPENCE

IPC: G03F1/36 ,  G03F7/20

Abstract: A method of controlling an imaging process uses a qualified optical proximity correction (OPC) model, the process including obtaining an OPC model that is configured to model the behavior of OPC modifications to a pre-OPC design in a process for forming a pattern on a substrate using a post-OPC design in a patterning process, using the patterning process in a manufacturing environment, collecting process control data in substrates patterned using the patterning process in the manufacturing environment, storing the collected process control data in a database, analyzing, by a hardware computer system, the stored, collected process control data to verify that the OPC model is correcting pattern features within a selected threshold, and for pattern features falling outside the selected threshold, determining a modification to the imaging process to correct imaging errors.