公开(公告)号：US20210302843A1

公开(公告)日：2021-09-30

申请号：US17268177

申请日：2019-08-01

Applicant: ASML NETHERLANDS B.V.

Inventor： Daan Maurits SLOTBOOM ,  Hermannes Theodorus HEIJMERIKX ,  Javier Augusto LOAIZA RIVAS ,  Jeroen COTTAAR

IPC: G03F7/20

Abstract: A method of configuring a step of scanning a beam of photons or particles across a patterning device for exposing a pattern onto a substrate, wherein the method includes determining a spatial resolution of a patterning correction configured to improve quality of the exposing, and determining a spatial dimension of the beam based on the determined spatial resolution of the patterning correction.

公开(公告)号：US20240264081A1

公开(公告)日：2024-08-08

申请号：US18640249

申请日：2024-04-19

Applicant: ASML Netherlands B.V.

Inventor： Jeroen COTTAAR

IPC: G01N21/47 ,  G01N21/95

CPC classification number: G01N21/4738 ,  G01N21/9501

Abstract: Disclosed is a method for performing a measurement of an exposed pattern in photoresist on a substrate and an associated metrology device. The method comprises imparting a beam of measurement radiation on said exposed pattern over a measurement area of a size which prevents or mitigates photoresist damage from the measurement radiation; capturing scattered radiation comprising said measurement radiation subsequent to it having been scattered from said exposed pattern and detecting the scattered radiation on at least one detector. A value for a parameter of interest is determined from the scattered radiation.

公开(公告)号：US20230040124A1

公开(公告)日：2023-02-09

申请号：US17787253

申请日：2020-11-27

Applicant: ASML Netherlands B.V.

Inventor： Han-Kwang NIENHUYS ,  Teis Johan COENEN ,  Sander Bas ROOBOL ,  Jeroen COTTAAR ,  Seyed Iman MOSSAVAT ,  Niels GEYPEN ,  Sandy Claudia SCHOLZ ,  Christina Lynn PORTER

IPC: G03F7/20 ,  G03F9/00

Abstract: Disclosed is a method of metrology. The method comprises illuminating a radiation onto a substrate; obtaining measurement data relating to at least one measurement of each of one or more structures on the substrate; using a Fourier-related transform to transform the measurement data into a transformed measurement data; and extracting a feature of the substrate from the transformed measurement data, or eliminating an impact of a nuisance parameter.

公开(公告)号：US20220334500A1

公开(公告)日：2022-10-20

申请号：US17636452

申请日：2020-07-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Hadi YAGUBIZADE ,  Min-Seok KIM ,  Yingchao CUI ,  Daan Maurits SLOTBOOM ,  Jeonghyun PARK ,  Jeroen COTTAAR

IPC: G03F7/20

Abstract: A method of determining a control setting for a lithographic apparatus. The method includes obtaining a first correction for a current layer on a current substrate based on first metrology data associated with one or more previous substrates, and obtaining a second correction for the current layer on the current substrate. The second correction is based on a residual determined based on second metrology data associated with a previous layer on the current substrate. The method further includes determining the control setting for the lithographic apparatus for patterning the current layer on the current substrate by combining the first correction and the second correction.

公开(公告)号：US20220260929A1

公开(公告)日：2022-08-18

申请号：US17628668

申请日：2020-07-06

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： Nikhil MEHTA ,  Maurits VAN DER SCHAAR ,  Markus Gerardus Martinus Maria VAN KRAAIJ ,  Hugo Augustinus Joseph CRAMER ,  Olger Victor ZWIER ,  Jeroen COTTAAR ,  Patrick WARNAAR

IPC: G03F7/20 ,  G03F1/84 ,  G01N21/956

Abstract: A patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device includes target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The patterning device includes product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that the at least one target has at least one boundary which is neither parallel nor perpendicular with respect to the product structures on the substrate.

公开(公告)号：US20200326637A1

公开(公告)日：2020-10-15

申请号：US15779758

申请日：2016-11-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Bram VAN HOOF ,  Jeroen COTTAAR

IPC: G03F7/20 ,  G03F9/00

Abstract: Combination of a stage and a level sensor configured to sense a height level at a target location on an object is described, the stage comprising an object table configured to hold the object and a positioning device for displacing the object table relative to the level sensor in a first direction, the level sensor comprising a projection system configured to project a measurement beam onto a measurement area of the object, the measurement area having a measurement area length in the first direction, a detector system configured to receive different portions of the measurement beam after being reflected off different sub-areas within the measurement area, the different sub-areas being arranged in the first direction, and to supply output signals representative of the different portions received, a signal processing system configured to process the output signals from the detector system.

公开(公告)号：US20230366815A1

公开(公告)日：2023-11-16

申请号：US18021885

申请日：2021-07-20

Applicant: ASML Netherlands B.V.

Inventor： Jeroen COTTAAR

IPC: G01N21/47 ,  G01N21/95

CPC classification number: G01N21/4738 ,  G01N21/9501

Abstract: Disclosed is a method for performing a measurement of an exposed pattern in photoresist on a substrate and an associated metrology device. The method comprises imparting a beam of measurement radiation on said exposed pattern over a measurement area of a size which prevents or mitigates photoresist damage from the measurement radiation; capturing scattered radiation comprising said measurement radiation subsequent to it having been scattered from said exposed pattern and detecting the scattered radiation on at least one detector. A value for a parameter of interest is determined from the scattered radiation.

公开(公告)号：US20220397834A1

公开(公告)日：2022-12-15

申请号：US17774743

申请日：2020-10-20

Applicant: ASML Netherlands B.V.

Inventor： Johan REININK ,  Jeroen COTTAAR ,  Sjoerd Nicolaas Lambertus DONDERS ,  Sietse Thijmen VAN DER POST

IPC: G03F9/00 ,  G03F7/20

Abstract: Apparatus and method for measuring one or more parameters of a substrate (300) using source radiation emitted from a radiation source (100) and directed onto the substrate. The apparatus comprises at least one reflecting element (710a) and at least one detector (720, 721). The at least one reflecting element is configured to receive a reflected radiation resulting from reflection of the source radiation from the substrate and further reflect the reflected radiation into a further reflected radiation. The at least one detector is configured for measurement of the further reflected radiation for determination of at least an alignment of the source radiation and/or the substrate

公开(公告)号：US20190384188A1

公开(公告)日：2019-12-19

申请号：US16479959

申请日：2017-12-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Rene Marinus Gerardus Johan QUEENS ,  Wolfgang Helmut HENKE ,  Arend Johannes DONKERBROEK ,  Jeroen COTTAAR

IPC: G03F9/00

Abstract: A method of controlling a lithographic apparatus to manufacture a plurality of devices, the method including: obtaining a parameter map representing a parameter variation across a substrate by measuring the parameter at a plurality of points on the substrate; decomposing the parameter map into a plurality of components, including a first parameter map component representing parameter variations associated with the device pattern and one or more further parameter map components representing other parameter variations; deriving a scale factor, configured to correct for errors in measurement of the parameter variation, from measurements of a second parameter of a substrate; and controlling the lithographic apparatus using the parameter map and scale factor to apply a device pattern at multiple locations across the substrate.