中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

9 records (took 0.01 seconds)

    DEVICE MANUFACTURING METHOD
    2.
    发明申请
    DEVICE MANUFACTURING METHOD 审中-公开

    公开(公告)号：US20200081353A1

    公开(公告)日：2020-03-12

    申请号：US16493835

    申请日：2018-03-28

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Hubertus Johannes Gertrudus SIMONS ,  Everhardus Cornelis MOS ,  Xiuhong WEI ,  Reza MAHMOODI BARAM ,  Hadi YAGUBIZADE ,  Yichen ZHANG

    IPC: G03F7/20

    Abstract: A device manufacturing method includes: exposing a first substrate using a lithographic apparatus to form a patterned layer having first features; processing the first substrate to transfer the first features into the first substrate; determining displacements of the first features from their nominal positions in the first substrate; determining a correction to at least partly compensate for the displacements; and exposing a second substrate using a lithographic apparatus to form a patterned layer having the first features, wherein the correction is applied for or during the exposing the second substrate.

    DETERMINING LITHOGRAPHIC MATCHING PERFORMANCE
    5.
    发明申请
    DETERMINING LITHOGRAPHIC MATCHING PERFORMANCE 有权

    公开(公告)号：US20220334503A1

    公开(公告)日：2022-10-20

    申请号：US17640880

    申请日：2020-08-11

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Yingchao CUI ,  Hadi YAGUBIZADE ,  Xiuhong WEI ,  Daan Maurits SLOTBOOM ,  Jeonghyun PARK ,  Sarathi ROY ,  Yichen ZHANG ,  Mohammad Reza KAMALI ,  Sang Uk KIM

    IPC: G03F7/20

    Abstract: A method for determining lithographic matching performance includes obtaining first monitoring data from recurrent monitoring for stability control for an available EUV scanner. For a DUV scanner, second monitoring data is similarly obtained from recurrent monitoring for stability control. The EUV first monitoring data are in a first layout. The DUV second monitoring data are in a second layout. A cross-platform overlay matching performance between the first lithographic apparatus and the second lithographic apparatus is determined based on the first monitoring data and the second monitoring data. This is done by reconstructing the first and/or second monitoring data into a common layout to allow comparison of the first and second monitoring data.

    METHOD OF ADAPTING FEED-FORWARD PARAMETERS
    6.
    发明申请
    METHOD OF ADAPTING FEED-FORWARD PARAMETERS 审中-公开

    公开(公告)号：US20200166854A1

    公开(公告)日：2020-05-28

    申请号：US16637792

    申请日：2018-07-12

    Applicant: ASML NETHERLANDS B.V

    Inventor： Hadi YAGUBIZADE ,  Ahmet Koray ERDAMAR ,  Hakki Ergün CEKLI

    IPC: G03F7/20

    Abstract: A method for correcting values of one or more feed-forward parameters used in a process of patterning substrates, the method including: obtaining measured overlay and/or alignment error data of a patterned substrate; and calculating one or more correction values for the one or more feed-forward parameters in dependence on the measured overlay and/or alignment error data.

    METHOD FOR CONTROLLING A LITHOGRAPHIC APPARATUS
    7.
    发明申请
    METHOD FOR CONTROLLING A LITHOGRAPHIC APPARATUS 有权

    公开(公告)号：US20220334500A1

    公开(公告)日：2022-10-20

    申请号：US17636452

    申请日：2020-07-22

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Hadi YAGUBIZADE ,  Min-Seok KIM ,  Yingchao CUI ,  Daan Maurits SLOTBOOM ,  Jeonghyun PARK ,  Jeroen COTTAAR

    IPC: G03F7/20

    Abstract: A method of determining a control setting for a lithographic apparatus. The method includes obtaining a first correction for a current layer on a current substrate based on first metrology data associated with one or more previous substrates, and obtaining a second correction for the current layer on the current substrate. The second correction is based on a residual determined based on second metrology data associated with a previous layer on the current substrate. The method further includes determining the control setting for the lithographic apparatus for patterning the current layer on the current substrate by combining the first correction and the second correction.

    MODELING METHOD FOR COMPUTATIONAL FINGERPRINTS
    8.
    发明申请
    MODELING METHOD FOR COMPUTATIONAL FINGERPRINTS 有权

    公开(公告)号：US20220291590A1

    公开(公告)日：2022-09-15

    申请号：US17634309

    申请日：2020-07-09

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Jing SU ,  Yana CHENG ,  Zchenxi LIN ,  Yi ZOU ,  Ddavit HARUTYUNYAN ,  Emil Peter SCHMITT-WEAVER ,  Kaustuve BHATTACHARYYA ,  Cornelis Johannes Henricus LAMBREGTS ,  Hadi YAGUBIZADE

    IPC: G03F7/20

    Abstract: A method for determining a model to predict overlay data associated with a current substrate being patterned. The method involves obtaining (i) a first data set associated with one or more prior layers and/or current layer of the current substrate, (ii) a second data set including overlay metrology data associated with one or more prior substrates, and (iii) de-corrected measured overlay data associated with the current layer of the current substrate; and determining, based on (i) the first data set, (ii) the second data set, and (iii) the de-corrected measured overlay data, values of a set of model parameters associated with the model such that the model predicts overlay data for the current substrate, wherein the values are determined such that a cost function is minimized, the cost function comprising a difference between the predicted data and the de-corrected measured overlay data.

Patent Agency Ranking