Abstract:
An exposure method is described, the method comprising the steps of a) transferring a first pattern onto each of a plurality of target portions of a substrate, the first pattern including at least one alignment mark; b) measuring a position of a plurality of alignment marks and determining an alignment mark displacement (dx, dy) for each of the plurality of alignment marks as a difference between a respective predetermined nominal position of the alignment mark and the respective measured position of the alignment mark; c) fitting a mathematical model to the plurality of alignment mark displacements to obtain a fitted mathematical model, d) determining a position of the first pattern in each of the plurality of target portions, based on the fitted mathematical model; e) transferring a second pattern onto each of the plurality of target portions, using the determined position of the first pattern in each of the plurality of target portions, wherein the mathematical model comprises polynomials Z1 and Z2: Z1 = r 2 cos(2 θ ) Z2 = r 2 sin(2 θ ) in polar coordinates (r, θ) or Z1 = x 2 - y Z 2= xy in Cartesian coordinates (x, y).
Abstract translation:描述了一种曝光方法,所述方法包括以下步骤:a)将第一图案转印到基板的多个目标部分中的每一个上,所述第一图案包括至少一个对准标记; b)测量多个对准标记的位置,并确定多个对准标记中的每一个的对准标记位移(dx,dy),作为对准标记的相应预定标称位置与相应测量位置之间的差 对准标记 c)将数学模型拟合到所述多个对准标记位移以获得拟合的数学模型,d)基于所拟合的数学模型确定所述多个目标部分中的每一个中的所述第一图案的位置; e)使用所述多个目标部分中的每一个中的所述第一图案的确定位置将第二图案转移到所述多个目标部分中的每一个上,其中所述数学模型包括多项式Z1和Z2:Z1 = r 2 cos(2θ) Z2 = r 2 sin(2θ)极坐标(r,θ)或Z1 = x 2 -y Z 2 = xy在笛卡尔坐标(x,y)。
Abstract:
A lithographic projection apparatus may include a laser cleaning device. The laser cleaning device is constructed and arranged to clean a surface. The laser cleaning device includes a laser source constructed and arranged to generate radiation, and an optical element constructed and arranged to focus the radiation in a focal point in order to generate a cleaning plasma in a background gas above the surface. The laser cleaning device is further provided with a gas supply constructed and arranged to generate a jet of protection gas at a location near the plasma.
Abstract:
A method including determining a position of a first pattern in each of a plurality of target portions on a substrate, based on a fitted mathematical model, wherein the first pattern includes at least one alignment mark, wherein the mathematical model is fitted to a plurality of alignment mark displacements (dx, dy) for the alignment marks in the target portions, and wherein the alignment mark displacements are a difference between a respective nominal position of the alignment mark and measured position of the alignment mark; and transferring a second pattern onto each of the target portions, using the determined position of the first pattern in each of the plurality of target portions, wherein the mathematical model includes polynomials Z1 and Z2: Z1=r2 cos(2θ) and Z2=r2 sin(2θ) in polar coordinates (r, θ) or Z1=x2−y2 and Z2=xy in Cartesian coordinates (x, y).