公开(公告)号：WO2015189001A1

公开(公告)日：2015-12-17

申请号：PCT/EP2015/060537

申请日：2015-05-13

Applicant: ASML NETHERLANDS B.V.

Inventor： KRAMER, Pieter, Jacob ,  GILIJAMSE, Rogier ,  LAMMERS, Niels ,  SLOTBOOM, Daan, Maurits

IPC: G03F9/00

CPC classification number: G03F9/7046 ,  G03F7/70141 ,  G03F7/70483 ,  G03F7/70525 ,  G03F7/706 ,  G03F7/70633 ,  G03F7/70775 ,  G03F9/7003 ,  G03F9/7049 ,  G03F9/7073

Abstract: An exposure method is described, the method comprising the steps of a) transferring a first pattern onto each of a plurality of target portions of a substrate, the first pattern including at least one alignment mark; b) measuring a position of a plurality of alignment marks and determining an alignment mark displacement (dx, dy) for each of the plurality of alignment marks as a difference between a respective predetermined nominal position of the alignment mark and the respective measured position of the alignment mark; c) fitting a mathematical model to the plurality of alignment mark displacements to obtain a fitted mathematical model, d) determining a position of the first pattern in each of the plurality of target portions, based on the fitted mathematical model; e) transferring a second pattern onto each of the plurality of target portions, using the determined position of the first pattern in each of the plurality of target portions, wherein the mathematical model comprises polynomials Z1 and Z2: Z1 = r 2 cos(2 θ ) Z2 = r 2 sin(2 θ ) in polar coordinates (r, θ) or Z1 = x 2 - y Z 2= xy in Cartesian coordinates (x, y).

Abstract translation: 描述了一种曝光方法，所述方法包括以下步骤：a）将第一图案转印到基板的多个目标部分中的每一个上，所述第一图案包括至少一个对准标记; b）测量多个对准标记的位置，并确定多个对准标记中的每一个的对准标记位移（dx，dy），作为对准标记的相应预定标称位置与相应测量位置之间的差 对准标记 c）将数学模型拟合到所述多个对准标记位移以获得拟合的数学模型，d）基于所拟合的数学模型确定所述多个目标部分中的每一个中的所述第一图案的位置; e）使用所述多个目标部分中的每一个中的所述第一图案的确定位置将第二图案转移到所述多个目标部分中的每一个上，其中所述数学模型包括多项式Z1和Z2：Z1 = r 2 cos（2θ） Z2 = r 2 sin（2θ）极坐标（r，θ）或Z1 = x 2 -y Z 2 = xy在笛卡尔坐标（x，y）。

公开(公告)号：WO2016169727A1

公开(公告)日：2016-10-27

申请号：PCT/EP2016/056498

申请日：2016-03-24

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DE RUIT, Kevin ,  PAARHUIS, Bart, Dinand ,  VAN DAMME, Jean-Philippe, Xavier ,  ONVLEE, Johannes ,  BROUWER, Cornelis, Melchior ,  KRAMER, Pieter, Jacob

IPC: G03F1/62 ,  G03F7/20 ,  G01B11/16

CPC classification number: G03F7/70983 ,  G01B2210/56 ,  G03F1/62 ,  G03F7/2002 ,  G03F7/70258 ,  G03F7/7085

Abstract: A lithographic apparatus comprises an illumination system configured to condition a radiation beam, a support to support a patterning device, a substrate table to hold a substrate; and a projection system to project the patterned radiation beam onto a target portion of the substrate. The support is provided with a transparent layer to protect the pattering device. The apparatus further comprises a transparent layer deformation-determining device to determine a deformation profile of the transparent layer, the deformation profile of the transparent layer expressing a deformation of the transparent layer during a scanning movement of the lithographic apparatus, a compensator device which is configured to control at least one of the projection system, the substrate table and the support in response to the deformation profile of the transparent layer to compensate for the deformation of the transparent layer during the scanning movement of the apparatus.

Abstract translation: 光刻设备包括被配置为调节辐射束的照明系统，支撑图案形成装置的支撑件，用于保持衬底的衬底台; 以及将图案化的辐射束投影到基板的目标部分上的投影系统。 该支撑件设有透明层以保护图案装置。 该装置还包括透明层变形确定装置，用于确定透明层的变形分布，在光刻设备的扫描运动期间表示透明层的变形的透明层的变形轮廓，配置的补偿装置 以响应于透明层的变形轮廓来控制投影系统，衬底台和支撑体中的至少一个，以补偿在装置的扫描运动期间透明层的变形。

公开(公告)号：WO2015110210A1

公开(公告)日：2015-07-30

申请号：PCT/EP2014/076678

申请日：2014-12-05

Applicant: ASML NETHERLANDS B.V.

Inventor： SLOTBOOM, Daan, Maurits ,  KRAMER, Pieter, Jacob ,  LEENDERS, Martinus, Hendrikus, Antonius ,  PAARHUIS, Bart, Dinand

IPC: G03F9/00

CPC classification number: G03F7/70141 ,  G03F9/7046 ,  G03F9/7096

Abstract: Disclosed is an apparatus and method for performing a measurement operation on a substrate in accordance with one or more wafer alignment models. The one or more wafer alignment models are selected from a plurality of candidate wafer alignment models. The apparatus, which may be a lithographic apparatus, comprises an external interface which enables selection of the wafer alignment model(s) and/or alteration of the wafer alignment model(s) prior to said measurement operation.

Abstract translation: 公开了一种用于根据一个或多个晶片对准模型在衬底上执行测量操作的装置和方法。 从多个候选晶片对准模型中选择一个或多个晶片对准模型。 可以是光刻设备的设备包括外部接口，其能够在所述测量操作之前选择晶片对准模型和/或改变晶片对准模型。

公开(公告)号：EP3155483A1

公开(公告)日：2017-04-19

申请号：EP15722714.1

申请日：2015-05-13

Applicant: ASML Netherlands B.V.

Inventor： KRAMER, Pieter, Jacob ,  GILIJAMSE, Rogier ,  LAMMERS, Niels ,  SLOTBOOM, Daan, Maurits

IPC: G03F9/00

CPC classification number: G03F9/7046 ,  G03F7/70141 ,  G03F7/70483 ,  G03F7/70525 ,  G03F7/706 ,  G03F7/70633 ,  G03F7/70775 ,  G03F9/7003 ,  G03F9/7049 ,  G03F9/7073

Abstract: A method including determining a position of a first pattern in each of a plurality of target portions on a substrate, based on a fitted mathematical model, wherein the first pattern includes at least one alignment mark, wherein the mathematical model is fitted to a plurality of alignment mark displacements (dx, dy) for the alignment marks in the target portions, and wherein the alignment mark displacements are a difference between a respective nominal position of the alignment mark and measured position of the alignment mark; and transferring a second pattern onto each of the target portions, using the determined position of the first pattern in each of the plurality of target portions, wherein the mathematical model includes polynomials Z1 and Z2: Z1=r2 cos(2θ) and Z2=r2 sin(2θ) in polar coordinates (r, θ) or Z1=x2−y2 and Z2=xy in Cartesian coordinates (x, y).

Abstract translation: 一种方法，包括基于拟合的数学模型确定基板上的多个目标部分中的每一个中的第一图案的位置，其中所述第一图案包括至少一个对准标记，其中所述数学模型拟合到多个 对准标记位移是对准标记的相应标称位置和对准标记的测量位置之间的差; 并且使用所述多个目标部分中的每一个中的所述第一图案的确定位置将第二图案转印到每个所述目标部分上，其中所述数学模型包括多项式Z1和Z2：Z1 = r2 cos（2θ）和Z2 = r2 极坐标（r，θ）中的sin（2θ）或笛卡尔坐标（x，y）中的Z1 = x2-y2和Z2 = xy。