公开(公告)号：US11592753B2

公开(公告)日：2023-02-28

申请号：US17715112

申请日：2022-04-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian Kou ,  Alexander Ypma ,  Marc Hauptmann ,  Michiel Kupers ,  Lydia Marianna Vergaij-Huizer ,  Erik Johannes Maria Wallerbos ,  Erik Henri Adriaan Delvigne ,  Willem Seine Christian Roelofs ,  Hakki Ergün Cekli ,  Stefan Cornelis Theodorus Van Der Sanden ,  Cédric Désiré Grouwstra ,  David Frans Simon Deckers ,  Manuel Giollo ,  Iryna Dovbush

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US12276919B2

公开(公告)日：2025-04-15

申请号：US17635290

申请日：2020-07-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Marc Hauptmann ,  Cornelis Johannes Henricus Lambregts ,  Amir Bin Ismail ,  Rizvi Rahman ,  Allwyn Boustheen ,  Raheleh Pishkari ,  Everhardus Cornelis Mos ,  Ekaterina Mikhailovna Viatkina ,  Roy Werkman ,  Ralph Brinkhof

IPC: G03F7/00

Abstract: A method of controlling a semiconductor manufacturing process, the method including: obtaining first metrology data based on measurements performed after a first process step; obtaining second metrology data based on measurements performed after the first process step and at least one additional process step; estimating a contribution to the process of: a) a control action which is at least partially based on the second metrology data and/or b) the at least one additional process step by using at least partially the second metrology data; and determining a Key Performance Indicator (KPI) or a correction for the first process step using the first metrology data and the estimated contribution.

公开(公告)号：US11099487B2

公开(公告)日：2021-08-24

申请号：US16495416

申请日：2018-03-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Marc Hauptmann ,  Everhardus Cornelis Mos ,  Weitian Kou ,  Alexander Ypma ,  Michiel Kupers ,  Hyunwoo Yu ,  Min-Sub Han

IPC: G03F7/20 ,  G03F9/00

Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.

公开(公告)号：US12044981B2

公开(公告)日：2024-07-23

申请号：US17381817

申请日：2021-07-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Marc Hauptmann ,  Everhardus Cornelis Mos ,  Weitian Kou ,  Alexander Ypma ,  Michiel Kupers ,  Hyunwoo Yu ,  Min-Sub Han

IPC: G03F7/00 ,  G03F9/00

CPC classification number: G03F7/70633 ,  G03F7/70525 ,  G03F7/7085 ,  G03F9/7003

Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.

公开(公告)号：US10241418B2

公开(公告)日：2019-03-26

申请号：US15527645

申请日：2015-09-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Marc Hauptmann ,  Dylan John David Davies ,  Paul Janssen ,  Naoko Tsugama ,  Richard Joseph Bruls ,  Kornelis Tijmen Hoekerd ,  Edwin Johannes Maria Janssen ,  Petrus Johannes Van Den Oever ,  Ronald Van Der Wilk ,  Antonius Hubertus Van Schijndel ,  Jorge Alberto Vieyra Salas

IPC: G03B27/52 ,  G03B27/42 ,  G03F7/20 ,  G03F1/84 ,  G01N21/95 ,  H01L21/66 ,  G01N21/956 ,  G01N27/61

Abstract: A diagnostic apparatus monitors a lithographic manufacturing system. First measurement data representing local deviations of some characteristic across a substrate is obtained using sensors within a lithographic apparatus, and/or a separate metrology tool. Other inspection tools perform substrate backside inspection to produce second measurement data. A high-resolution backside defect image is processed into a form in which it can be compared with lower resolution information from the first measurement data. Cross-correlation is performed to identify which of the observed defects are correlated spatially with the deviations represented in the first measurement data. A correlation map is used to identify potentially relevant clusters of defects in the more detailed original defect map. The responsible apparatus can be identified by pattern recognition as part of an automated root cause analysis. Alternatively, reticle inspection data may be used as second measurement data.

公开(公告)号：US12085913B2

公开(公告)日：2024-09-10

申请号：US17601307

申请日：2020-03-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Marc Hauptmann ,  Amir Bin Ismail ,  Rizvi Rahman ,  Jiapeng Li

IPC: G05B19/404 ,  G03F7/00 ,  G03F7/20

CPC classification number: G05B19/404 ,  G03F7/70516 ,  G05B2219/45031 ,  G05B2219/50296

Abstract: A method for generating a sampling scheme for a device manufacturing process, the method including: obtaining a measurement data time series of a plurality of processed substrates; transforming the measurement data time series to obtain frequency domain data; determining, using the frequency domain data, a temporal sampling scheme; determining an error offset introduced by the temporal sampling scheme on the basis of measurements on substrates performed according to the temporal sampling scheme; and determining an improved temporal sampling scheme to compensate the error offset.

公开(公告)号：US11782349B2

公开(公告)日：2023-10-10

申请号：US18100662

申请日：2023-01-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian Kou ,  Alexander Ypma ,  Marc Hauptmann ,  Michiel Kupers ,  Lydia Marianna Vergaij-Huizer ,  Erik Johannes Maria Wallerbos ,  Erik Henri Adriaan Delvigne ,  Willem Seine Christian Roelofs ,  Hakki Ergün Cekli ,  Stefan Cornelis Theodorus Van Der Sanden ,  Cédric Désiré Grouwstra ,  David Frans Simon Deckers ,  Manuel Giollo ,  Iryna Dovbush

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70508 ,  G03F7/705 ,  G03F7/70633

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US11327407B2

公开(公告)日：2022-05-10

申请号：US17102850

申请日：2020-11-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian Kou ,  Alexander Ypma ,  Marc Hauptmann ,  Michiel Kupers ,  Lydia Marianna Vergaij-Huizer ,  Erik Johannes Maria Wallerbos ,  Erik Henri Adriaan Delvigne ,  Willem Seine Christian Roelofs ,  Hakki Ergün Cekli ,  Stefan Cornelis Theodorus Van Der Sanden ,  Cédric Désiré Grouwstra ,  David Frans Simon Deckers ,  Manuel Giollo ,  Iryna Dovbush

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US20190219929A1

公开(公告)日：2019-07-18

申请号：US16362754

申请日：2019-03-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Marc Hauptmann ,  Dylan John David Davies ,  Paul Janssen ,  Naoko Tsugama ,  Richard Joseph Bruls ,  Kornelis Tijmen Hoekerd ,  Edwin Johannes Maria Janssen ,  Petrus Johannes Van Den Oever ,  Ronald Van Der Wilk ,  Antonius Hubertus Van Schijndel ,  Jorge Alberto Vieyra Salas

IPC: G03F7/20 ,  G03F1/84 ,  G01N21/95

CPC classification number: G03F7/70616 ,  G01N21/9501 ,  G01N27/61 ,  G01N2021/95676 ,  G03F1/84 ,  G03F7/70508 ,  G03F7/70783 ,  H01L22/12 ,  H01L22/20

Abstract: A diagnostic apparatus monitors a lithographic manufacturing system. First measurement data representing local deviations of some characteristic across a substrate is obtained using sensors within a lithographic apparatus, and/or a separate metrology tool. Other inspection tools perform substrate backside inspection to produce second measurement data. A high- resolution backside defect image is processed into a form in which it can be compared with lower resolution information from the first measurement data. Cross-correlation is performed to identify which of the observed defects are correlated spatially with the deviations represented in the first measurement data. A correlation map is used to identify potentially relevant clusters of defects in the more detailed original defect map. The responsible apparatus can be identified by pattern recognition as part of an automated root cause analysis. Alternatively, reticle inspection data may be used as second measurement data.