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公开(公告)号:US10527958B2
公开(公告)日:2020-01-07
申请号:US16132520
申请日:2018-09-17
Applicant: ASML NETHERLANDS B.V.
Inventor: Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Sudharshanan Raghunathan , Boris Menchtchikov , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van't Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号:US20210349402A1
公开(公告)日:2021-11-11
申请号:US17381817
申请日:2021-07-21
Applicant: ASML NETHERLANDS B.V.
Inventor: Marc HAUPTMANN , Everhardus Cornelis Mos , Weitian Kou , Alexander Ypma , Michiel Kupers , Hyunwoo Yu , Min-Sub Han
Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.
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公开(公告)号:US11099487B2
公开(公告)日:2021-08-24
申请号:US16495416
申请日:2018-03-28
Applicant: ASML NETHERLANDS B.V.
Inventor: Marc Hauptmann , Everhardus Cornelis Mos , Weitian Kou , Alexander Ypma , Michiel Kupers , Hyunwoo Yu , Min-Sub Han
Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.
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公开(公告)号:US12044981B2
公开(公告)日:2024-07-23
申请号:US17381817
申请日:2021-07-21
Applicant: ASML NETHERLANDS B.V.
Inventor: Marc Hauptmann , Everhardus Cornelis Mos , Weitian Kou , Alexander Ypma , Michiel Kupers , Hyunwoo Yu , Min-Sub Han
CPC classification number: G03F7/70633 , G03F7/70525 , G03F7/7085 , G03F9/7003
Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.
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公开(公告)号:US11054813B2
公开(公告)日:2021-07-06
申请号:US15763834
申请日:2016-09-21
Applicant: ASML NETHERLANDS B.V.
Inventor: Alexander Ypma , David Frans Simon Deckers , Franciscus Godefridus Casper Bijnen , Richard Johannes Franciscus Van Haren , Weitian Kou
IPC: G05B19/418 , G03F7/20 , G03F9/00
Abstract: In a lithographic process in which a series of substrates are processed in different contexts, object data (such as performance data representing overlay measured on a set of substrates that have been processed previously) is received. Context data represents one or more parameters of the lithographic process that vary between substrates within the set. By principal component analysis or other statistical analysis of the performance data, the set of substrates are partitioned into two or more subsets. The first partitioning of the substrates and the context data are used to identify one or more relevant context parameters, being parameters of the lithographic process that are observed to correlate most strongly with the first partitioning. The lithographic apparatus is controlled for new substrates by reference to the identified relevant context parameters. Embodiments with feedback control and feedforward control are described.
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公开(公告)号:US10962887B2
公开(公告)日:2021-03-30
申请号:US16686418
申请日:2019-11-18
Applicant: ASML NETHERLANDS B.V.
Inventor: Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Sudharshanan Raghunathan , Boris Menchtchikov , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van't Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method including: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号:US12124179B2
公开(公告)日:2024-10-22
申请号:US17920014
申请日:2021-05-11
Applicant: ASML NETHERLANDS B.V.
Inventor: Wim Tjibbo Tel , Hermanus Adrianus Dillen , Marc Jurian Kea , Roy Werkman , Weitian Kou
IPC: G03F9/00
CPC classification number: G03F9/7023 , G03F9/7088
Abstract: A method of determining a position of a product feature on a substrate, the method includes: obtaining a plurality of position measurements of one or more product features on a substrate, wherein the measurements are referenced to either a positioning system used in displacing the substrate in between measurements or a plane parallel to the surface of the substrate; and determining a distortion component of the substrate based on the position measurements.
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公开(公告)号:US11592753B2
公开(公告)日:2023-02-28
申请号:US17715112
申请日:2022-04-07
Applicant: ASML NETHERLANDS B.V.
Inventor: Weitian Kou , Alexander Ypma , Marc Hauptmann , Michiel Kupers , Lydia Marianna Vergaij-Huizer , Erik Johannes Maria Wallerbos , Erik Henri Adriaan Delvigne , Willem Seine Christian Roelofs , Hakki Ergün Cekli , Stefan Cornelis Theodorus Van Der Sanden , Cédric Désiré Grouwstra , David Frans Simon Deckers , Manuel Giollo , Iryna Dovbush
IPC: G03F7/20
Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.
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公开(公告)号:US11448973B2
公开(公告)日:2022-09-20
申请号:US16954384
申请日:2018-11-20
Applicant: ASML NETHERLANDS B.V.
Inventor: Manouk Rijpstra , Cornelis Johannes Henricus Lambregts , Wim Tjibbo Tel , Sarathi Roy , Cédric Désiré Grouwstra , Chi-Fei Nien , Weitian Kou , Chang-Wei Chen , Pieter Gerardus Jacobus Smorenberg
IPC: G03F7/20
Abstract: A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.
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公开(公告)号:US11782349B2
公开(公告)日:2023-10-10
申请号:US18100662
申请日:2023-01-24
Applicant: ASML NETHERLANDS B.V.
Inventor: Weitian Kou , Alexander Ypma , Marc Hauptmann , Michiel Kupers , Lydia Marianna Vergaij-Huizer , Erik Johannes Maria Wallerbos , Erik Henri Adriaan Delvigne , Willem Seine Christian Roelofs , Hakki Ergün Cekli , Stefan Cornelis Theodorus Van Der Sanden , Cédric Désiré Grouwstra , David Frans Simon Deckers , Manuel Giollo , Iryna Dovbush
CPC classification number: G03F7/70508 , G03F7/705 , G03F7/70633
Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.
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