-
公开(公告)号：US11003099B2
公开(公告)日：2021-05-11
申请号：US16593132
申请日：2019-10-04
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Murat Bozkurt , Patrick Warnaar , Stefan Cornelis Theodorus Van Der Sanden
IPC: G03F9/00 , G03F7/20 , G01N21/956
Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.
-
公开(公告)号：US20190072496A1
公开(公告)日：2019-03-07
申请号：US16114629
申请日：2018-08-28
Applicant: ASML Netherlands B.V.
IPC: G01N21/88 , G01N21/956 , G03F7/20 , G01N21/47
Abstract: Multilayered product structures are formed on substrates by a combination of patterning steps, physical processing steps and chemical processing steps. An inspection apparatus illuminates a plurality of target structures and captures pupil images representing the angular distribution of radiation scattered by each target structure. The target structures have the same design but are formed at different locations on a substrate and/or on different substrates. Based on a comparison of the images the inspection apparatus infers the presence of process-induced stack variations between the different locations. In one application, the inspection apparatus separately measures overlay performance of the manufacturing process based on dark-field images, combined with previously determined calibration information. The calibration is adjusted for each target, depending on the stack variations inferred from the pupil images.
-
公开(公告)号：US10996570B2
公开(公告)日：2021-05-04
申请号：US16594613
申请日：2019-10-07
Applicant: ASML Netherlands B.V.
Inventor： Zili Zhou , Nitesh Pandey , Olger Victor Zwier , Patrick Warnaar , Maurits Van Der Schaar , Elliott Gerard McNamara , Arie Jeffrey Den Boef , Paul Christiaan Hinnen , Murat Bozkurt , Joost Jeroen Ottens , Kaustuve Bhattacharyya , Michael Kubis
IPC: G03F7/20 , G01N21/47 , G01N21/95 , G01N21/956 , G03F9/00
Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.
-
公开(公告)号：US10859923B2
公开(公告)日：2020-12-08
申请号：US16792267
申请日：2020-02-16
Applicant: ASML Netherlands B.V.
Inventor： Gonzalo Roberto Sanguinetti , Murat Bozkurt , Maurits Van Der Schaar , Arie Jeffrey Den Boef
Abstract: Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (λ1, λ2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.
-
公开(公告)号：US20190107785A1
公开(公告)日：2019-04-11
申请号：US16155424
申请日：2018-10-09
Applicant: ASML Netherlands B.V.
Inventor： Narjes JAVAHERI , Mohammadreza Hajiahmadi , Murat Bozkurt , Alberto Da Costa Assafrao , Marc Johannes Noot , Simon Gijsbert Josephus Mathijssen , Jin Lian
Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.
-
Patent Agency Ranking
公开(公告)号：US10437163B2
公开(公告)日：2019-10-08
申请号：US15650401
申请日：2017-07-14
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Murat Bozkurt , Patrick Warnaar , Stefan Cornelis Theodorus Van Der Sanden
IPC: G03F9/00 , G01N21/956 , G03F7/20
Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.
-
公开(公告)号：US09940703B2
公开(公告)日：2018-04-10
申请号：US15473879
申请日：2017-03-30
Applicant: ASML Netherlands B.V.
CPC classification number: G06T7/0004 , G03F7/705 , G03F7/70591 , G03F7/70633 , G06T7/11 , G06T2207/10061 , G06T2207/20224 , G06T2207/30148
Abstract: A property of a target structure is measured based on intensity of an image of the target. The method includes (a) obtaining an image of the target structure; (b) defining a plurality of candidate regions of interest, each candidate region of interest comprising a plurality of pixels in the image; (c) defining an optimization metric value for the candidate regions of interest based at least partly on signal values of pixels within the region of interest; (d) defining a target signal function which defines a contribution of each pixel in the image to a target signal value. The contribution of each pixel depends on (i) which candidate regions of interest contain that pixel and (ii) optimization metric values of those candidate regions of interest.
-
公开(公告)号：US11698346B2
公开(公告)日：2023-07-11
申请号：US16114629
申请日：2018-08-28
Applicant: ASML NETHERLANDS B.V.
CPC classification number: G01N21/8806 , G01N21/4788 , G01N21/9501 , G01N21/95607 , G03F7/705 , G03F7/7065 , G03F7/70525 , G03F7/70616 , G03F7/70633 , H01L22/12
Abstract: Multilayered product structures are formed on substrates by a combination of patterning steps, physical processing steps and chemical processing steps. An inspection apparatus illuminates a plurality of target structures and captures pupil images representing the angular distribution of radiation scattered by each target structure. The target structures have the same design but are formed at different locations on a substrate and/or on different substrates. Based on a comparison of the images the inspection apparatus infers the presence of process-induced stack variations between the different locations. In one application, the inspection apparatus separately measures overlay performance of the manufacturing process based on dark-field images, combined with previously determined calibration information. The calibration is adjusted for each target, depending on the stack variations inferred from the pupil images.
-
公开(公告)号：US10705437B2
公开(公告)日：2020-07-07
申请号：US16155424
申请日：2018-10-09
Applicant: ASML Netherlands B.V.
Inventor： Narjes Javaheri , Mohammadreza Hajiahmadi , Murat Bozkurt , Alberto Da Costa Assafrao , Marc Johannes Noot , Simon Gijsbert Josephus Mathijssen , Jin Lian
IPC: G03F7/20 , G01N21/47 , G01B11/24 , G01B11/30 , H01L23/544
Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.
-
10.发明授权公开(公告)号：US10481506B2
公开(公告)日：2019-11-19
申请号：US15967861
申请日：2018-05-01
Applicant: ASML Netherlands B.V.
Inventor： Murat Bozkurt , Maurits Van Der Schaar , Patrick Warnaar , Martin Jacobus Johan Jak , Mohammadreza Hajiahmadi , Grzegorz Grzela , Lukasz Jerzy Macht
IPC: G03F7/20 , G01N21/47 , G01N21/956 , G01N21/95
Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As′) are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.
-
-
-
-
-
-
-
-
-
Search Results
16
records
(took 0.025 seconds)
