METHOD FOR CONTROLLING A MANUFACTURING PROCESS AND ASSOCIATED APPARATUSES

    公开(公告)号:US20230161265A1

    公开(公告)日:2023-05-25

    申请号:US18157776

    申请日:2023-01-20

    CPC classification number: G03F7/70525 G03F7/70616 G03F7/70441

    Abstract: Disclosed is a method of determining a process window within a process space comprising obtaining contour data relating to features to be provided to a substrate across a plurality of layers, for each of a plurality of process conditions associated with providing the features across said plurality of layers and failure mode data describing constraints on the contour data across the plurality of layers. The failure mode data is applied to the contour data to determine a failure count for each process condition; and the process window is determined by associating each process condition to its corresponding failure count. Also disclosed is a method of determining an actuation constrained subspace of the process window based on actuation constraints imposed by the plurality of actuators.

    LITHOGRAPHIC METHOD
    3.
    发明公开
    LITHOGRAPHIC METHOD 审中-公开

    公开(公告)号:US20240004307A1

    公开(公告)日:2024-01-04

    申请号:US18039484

    申请日:2021-11-29

    CPC classification number: G03F7/706 G03F7/70575

    Abstract: A method of forming a pattern on a substrate using a lithographic apparatus provided with a patterning device and a projection system having chromatic aberrations, the method including: providing a radiation beam having a plurality of wavelength components to the patterning device; forming an image of the patterning device on the substrate using the projection system to form the pattern, wherein a position of the pattern is dependent on a wavelength of the radiation beam due to the chromatic aberrations; and controlling a spectrum of the radiation beam to control the position of the pattern.

    SEMICONDUCTOR DEVICE GEOMETRY METHOD AND SYSTEM

    公开(公告)号:US20220327364A1

    公开(公告)日:2022-10-13

    申请号:US17638472

    申请日:2020-07-31

    Abstract: Systems and methods for predicting substrate geometry associated with a patterning process are described. Input information including geometry information and/or process information for a pattern is received and, using a machine learning prediction model, multi-dimensional output substrate geometry is predicted. The multi-dimensional output information may include pattern probability images. A stochastic edge placement error band and/or a stochastic failure rate may be predicted. The input information can include simulated aerial images, simulated resist images, target substrate dimensions, and/or data from a lithography apparatus associated with device manufacturing. Different aerial images may correspond to different heights in resist layers associated with the patterning process, for example.

Patent Agency Ranking