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    ALIGNMENT METHOD AND ASSOCIATED ALIGNMENT AND LITHOGRAPHIC APPARATUSES
    2.
    发明公开
    ALIGNMENT METHOD AND ASSOCIATED ALIGNMENT AND LITHOGRAPHIC APPARATUSES 审中-公开

    公开(公告)号：US20240184221A1

    公开(公告)日：2024-06-06

    申请号：US18279121

    申请日：2022-02-18

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Samee Ur REHMAN ,  Boris MENCHTCHIKOV ,  Robert John SOCHA

    IPC: G03F9/00

    CPC classification number: G03F9/7042 ,  G03F9/7019 ,  G03F9/7088

    Abstract: A method of identifying one or more dominant asymmetry modes relating to asymmetry in an alignment mark, the method includes obtaining alignment data relating to measurement of alignment marks on at least one substrate using a plurality of alignment conditions; identifying one or more dominant orthogonal components of the alignment data, the one or more dominant orthogonal components including a number of orthogonal components which together sufficiently describes variance in the alignment data; and determining an asymmetry mode as dominant if it corresponds to an expected asymmetry mode shape which best matches one of the one or more dominant orthogonal components. Alternatively, the method includes, for each known asymmetric mode: determining a sensitivity metric; and determining an asymmetry mode as dominant if the sensitivity metric is above a sensitivity threshold.

    METROLOGY BY RECONSTRUCTION
    3.
    发明申请
    METROLOGY BY RECONSTRUCTION 审中-公开

    公开(公告)号：US20180364588A1

    公开(公告)日：2018-12-20

    申请号：US16060192

    申请日：2016-12-16

    Applicant: ASML Netherlands B.V.

    Inventor： Robert John SOCHA

    IPC: G03F7/20

    CPC classification number: G03F7/70625 ,  G03F7/70141 ,  G03F7/70158

    Abstract: Disclosed herein is a method comprising: obtaining a plurality of measurement results from a pattern on a substrate respectively using a plurality of substrate measurement recipes, the substrate processed by a lithography process; reconstruct, using a computer, the pattern using the plurality of measurement results, to obtain a reconstructed pattern.

    DESIGN RULE OPTIMIZATION IN LITHOGRAPHIC IMAGING BASED ON CORRELATION OF FUNCTIONS REPRESENTING MASK AND PREDEFINED OPTICAL CONDITIONS
    5.
    发明申请
    DESIGN RULE OPTIMIZATION IN LITHOGRAPHIC IMAGING BASED ON CORRELATION OF FUNCTIONS REPRESENTING MASK AND PREDEFINED OPTICAL CONDITIONS 有权
    基于代表掩蔽和预测光学条件的函数关联的图像成像中的设计规则优化

    公开(公告)号：US20140101625A1

    公开(公告)日：2014-04-10

    申请号：US14108886

    申请日：2013-12-17

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Robert John SOCHA

    IPC: G06F17/50

    CPC classification number: G06F17/5072 ,  G03F1/70 ,  G06F17/50 ,  G06F17/5081

    Abstract: Methods, computer program products and apparatuses for optimizing design rules for producing a mask are disclosed, while keeping the optical conditions (including but not limited to illumination shape, projection optics numerical aperture (NA) etc.) fixed. A cross-correlation function is created by multiplying the diffraction order functions of the mask patterns with the eigenfunctions from singular value decomposition (SVD) of a TCC matrix. The diffraction order functions are calculated for the original design rule set, i.e., using the unperturbed condition. ILS is calculated at an edge of a calculated image of a critical polygon using the cross-correlation results and using translation properties of a Fourier transform. Once an optimum separation is calculated, it is incorporated into the design rule to optimize the mask layout for improved ILS throughout the mask.

    Abstract translation: 公开了用于优化用于制造掩模的设计规则的计算机程序产品和装置，同时保持光学条件（包括但不限于照明形状，投影光学数值孔径（NA）等））。 通过将掩模图案的衍射级函数与TCC矩阵的奇异值分解（SVD）的本征函数相乘，创建互相关函数。 对于原始设计规则集，即使用未受干扰的条件，计算衍射级函数。 使用互相关结果并使用傅里叶变换的平移特性，在临界多边形的计算图像的边缘处计算ILS。 一旦计算出最佳分离，就将其并入设计规则中，以优化整个掩模中改进的ILS的掩模布局。

    METROLOGY MARK STRUCTURE AND METHOD OF DETERMINING METROLOGY MARK STRUCTURE
    9.
    发明申请
    METROLOGY MARK STRUCTURE AND METHOD OF DETERMINING METROLOGY MARK STRUCTURE 有权

    公开(公告)号：US20220350268A1

    公开(公告)日：2022-11-03

    申请号：US17765214

    申请日：2020-09-25

    Applicant: ASML HOLDING N.V. ,  ASML NETHERLANDS B.V.

    Inventor： Tamer Mohamed Tawfik Ahmed Mohamed ELAZHARY ,  Robert John SOCHA ,  Stephen ROUX ,  Simon Reinald HUISMAN

    IPC: G03F9/00 ,  G03F7/20 ,  G01B11/26

    Abstract: A structure of a semiconductor device with a sub-segmented grating structure as a metrology mark and a method for configuring the metrology mark. The method for configuring a metrology mark may be used in a lithography process. The method may include determining an initial characteristic function of an initial metrology mark disposed within a layer stack. The method also includes perturbing one or more variables of the plurality of subsegments of the metrology mark (e.g., pitch, duty cycle, and/or line width of the plurality of subsegments) and further perturbing a thickness of one or more layers within the layer stack. The method further includes iteratively performing the perturbations until a minimized characteristic function of an initial metrology mark is determined to set a configuration for the plurality of subsegments.

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