公开(公告)号：US20210132517A1

公开(公告)日：2021-05-06

申请号：US16472712

申请日：2017-11-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Andrey NIKIPELOV ,  Vadim Yevgenyevich BANINE ,  Joost André KLUGKIST ,  Maxim Aleksandrovich NASALEVICH ,  Roland Johannes Wilhelmus STAS ,  WRICKE Sandro

IPC: G03F9/00

Abstract: A lithographic apparatus has an object, the object includes: a substrate and optionally a lower layer on the substrate; an upper layer; and an intermediate layer between the upper layer and the substrate, wherein a bond strength between the intermediate layer and the substrate or lower layer is greater than a bond strength between the intermediate layer and the upper layer and the intermediate layer has a Young's Modulus and/or a Poisson ratio within 20% of that of the upper layer.

公开(公告)号：US20200064183A1

公开(公告)日：2020-02-27

申请号：US16488259

申请日：2018-02-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Joost André KLUGKIST ,  Vadim Yevgenyevich BANINE ,  Johan Franciscus Maria BECKERS ,  Madhusudhanan JAMBUNATHAN ,  Maxim Aleksandrovich NASALEVICH ,  Andrey NIKIPELOV ,  Roland Johannes Wilhelmus STAS ,  David Ferdinand VLES ,  Wilhelmus Jacobus Johannes WELTERS ,  Sandro WRICKE

IPC: G01J1/42

Abstract: A sensor mark including: a substrate having: a deep ultra violet (DUV) radiation absorbing layer including a first material which substantially absorbs DUV radiation; and a protecting layer including a second material, wherein: the DUV radiation absorbing layer has a through hole in it; the protecting layer is positioned, in plan, in the through hole and the protecting layer in the through hole has a patterned region having a plurality of through holes; and the second material is more noble than the first material.

公开(公告)号：US20180246420A1

公开(公告)日：2018-08-30

申请号：US15753695

申请日：2016-08-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Nitesh PANDEY ,  Roland Johannes Wilhelmus STAS ,  Hoite Pieter Theodoor TOLSMA

IPC: G03F7/20

CPC classification number: G03F7/70666 ,  G03F7/70525 ,  G03F7/706 ,  G03F7/70633 ,  G03F9/7088

Abstract: A method comprises determining at least one property of a first marker feature corresponding to a marker of a lithographic patterning device installed in a lithographic apparatus, wherein the first marker feature comprises a projected image of the marker obtained by projection of radiation through the lithographic patterning device by the lithographic apparatus, the determining of at least one property of the projected image of the marker comprises using an image sensor to sense radiation of the projected image prior to formation of at least one desired lithographic feature on the substrate, and the method further comprises determining at least one property of a second marker feature arising from the same marker, after formation of said at least one desired lithographic feature on the substrate.

公开(公告)号：US20180088467A1

公开(公告)日：2018-03-29

申请号：US15567191

申请日：2016-04-18

Applicant: ASML Netherlands B.V.

Inventor： Johannes Jacobus Matheus BASELMANS ,  Pieter Bart Aloïs DE BUCK ,  Nico VANROOSE ,  Giovanni IMPONENTE ,  Roland Johannes Wilhelmus STAS ,  Chanpreet KAUR ,  James Robert DOWNES

IPC: G03F7/20 ,  G01M11/02

CPC classification number: G03F7/706 ,  G01M11/0242 ,  G01M11/0257 ,  G03F7/70866

Abstract: A method comprising illuminating a patterning device (MA′) comprising a plurality of patterned regions (15a-15c) of which each patterns a measurement beam (17a-17c), projecting, with a projection system (PL), the measurement beams onto a sensor apparatus (21) comprising a plurality of detector regions (25a-25c), making a first measurement of radiation when the patterning device and the sensor apparatus are positioned in a first relative configuration, moving at least one of the patterning device and the sensor apparatus so as to change the relative configuration of the patterning device to a second relative configuration, making a second measurement of radiation when the patterning device and the sensor apparatus are positioned in the second relative configuration in which at least some of the plurality of detector regions receive a different measurement beam to the measurement beam which was received at the respective detector region in the first relative configuration and determining aberrations caused by the projection system.