公开(公告)号：WO2010037575A1

公开(公告)日：2010-04-08

申请号：PCT/EP2009/059222

申请日：2009-07-17

Applicant: ASML Netherlands B.V. ,  LOOPSTRA, Erik ,  DE BOEIJ, Wilhelmus ,  BUTLER, Hans ,  DE JONGH, Robertus ,  VAN SCHOOT, Jan ,  SENGERS, Timotheus ,  WIJCKMANS, Maurice ,  JANSSEN, Franciscus

Inventor： LOOPSTRA, Erik ,  DE BOEIJ, Wilhelmus ,  BUTLER, Hans ,  DE JONGH, Robertus ,  VAN SCHOOT, Jan ,  SENGERS, Timotheus ,  WIJCKMANS, Maurice ,  JANSSEN, Franciscus

IPC: G03F7/20

CPC classification number: G03F7/70891 ,  G03F7/70258 ,  G03F7/70825

Abstract: A projection system (PS) is provided which includes, in an embodiment, two frames. The optical elements of the projection system are mounted on a first frame (200). The position of the optical elements is measured relative to a second frame (300) using a first measurement system (910). A second measurement system (920) is used to measure a parameter associated with a deformation of the second frame. The measurement made by the second measurement system can be used to compensate for any errors in the position of the optical elements as measured by the first measurement system resulting from deformations of the second frame. Typically, deformations of the frames are due to resonant oscillation and thermal expansion. Having two frames enables the optical elements of the projection system to be positioned with a high degree of accuracy. Optionally, a temperature control system (780, 790) may be provided to drive the temperature of at least one of the frames back to a desired value after the lithographic apparatus has been taken off line.

Abstract translation: 提供了一种投影系统（PS），在一个实施例中包括两个帧。 投影系统的光学元件安装在第一框架（200）上。 使用第一测量系统（910）相对于第二框架（300）测量光学元件的位置。 第二测量系统（920）用于测量与第二帧的变形相关联的参数。 由第二测量系统进行的测量可用于补偿由第二框架的变形引起的由第一测量系统测量的光学元件位置的任何误差。 通常，框架的变形是由于共振振荡和热膨胀。 具有两个框架使得投影系统的光学元件能够以高精确度定位。 可选地，可以提供温度控制系统（780,790），以在光刻设备已经离线之后将至少一个框架的温度恢复到期望值。

公开(公告)号：WO2014044670A1

公开(公告)日：2014-03-27

申请号：PCT/EP2013/069262

申请日：2013-09-17

Applicant: ASML NETHERLANDS B.V.

Inventor： LOOPSTRA, Erik ,  VAN SCHOOT, Jan ,  SENGERS, Timotheus ,  VALENTIN, Christiaan ,  VAN DIJSSELDONK, Antonius

IPC: G03F7/20

CPC classification number: G03F7/70425 ,  G03F7/7045 ,  G03F7/70466 ,  G03F7/70475

Abstract: A method of exposing a patterned area on a substrate using an EUV lithographic apparatus having a demagnification of about 5x and a numerical aperture of about 0.4 is disclosed. The method comprises exposing a first portion of the patterned area on the substrate using a first exposure, the first portion dimensions are significantly less than the dimensions of a conventional exposure, and exposing one or more additional portions of the patterned area on the substrate using one or more additional exposures, the additional portions having dimensions which are significantly less than the dimensions of a conventional exposure. The method further comprises repeating the above to expose a second patterned area on the substrate, the second patterned area being provided with the same pattern as the first patterned area, wherein a distance between centre points of the first and second patterned areas corresponds with a dimension of a conventional exposure.

Abstract translation: 公开了一种使用具有约5倍的缩小并且具有约0.4的数值孔径的EUV光刻设备在衬底上曝光图案化区域的方法。 该方法包括使用第一曝光将基板上的图案化区域的第一部分曝光，第一部分尺寸明显小于常规曝光的尺寸，并且使用一个或多个曝光将基板上的图案化区域的一个或多个附加部分曝光 或更多额外的曝光，附加部分的尺寸明显小于常规曝光的尺寸。 该方法还包括重复上述步骤以暴露衬底上的第二图案化区域，第二图案化区域设置有与第一图案化区域相同的图案，其中第一和第二图案化区域的中心点之间的距离对应于尺寸 的常规曝光。

公开(公告)号：EP2898370B1

公开(公告)日：2020-07-15

申请号：EP13770852.5

申请日：2013-09-17

Applicant: ASML Netherlands B.V.

Inventor： LOOPSTRA, Erik ,  VAN SCHOOT, Jan ,  SENGERS, Timotheus ,  VALENTIN, Christiaan ,  VAN DIJSSELDONK, Antonius

IPC: G03F7/20

公开(公告)号：EP2898370A1

公开(公告)日：2015-07-29

申请号：EP13770852.5

申请日：2013-09-17

Applicant: ASML Netherlands B.V.

Inventor： LOOPSTRA, Erik ,  VAN SCHOOT, Jan ,  SENGERS, Timotheus ,  VALENTIN, Christiaan ,  VAN DIJSSELDONK, Antonius

IPC: G03F7/20

Abstract: A method of exposing a patterned area on a substrate using an EUV lithographic apparatus having a demagnification of about 5× and a numerical aperture of about 0.4 is disclosed. The method comprises exposing a first portion of the patterned area on the substrate using a first exposure, the first portion dimensions are significantly less than the dimensions of a conventional exposure, and exposing one or more additional portions of the patterned area on the substrate using one or more additional exposures, the additional portions having dimensions which are significantly less than the dimensions of a conventional exposure. The method further comprises repeating the above to expose a second patterned area on the substrate, the second patterned area being provided with the same pattern as the first patterned area, wherein a distance between center points of the first and second patterned areas corresponds with a dimension of a conventional exposure.