公开(公告)号：US20250013158A1

公开(公告)日：2025-01-09

申请号：US18712671

申请日：2022-11-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Huaichen ZHANG ,  Ruben Cornelis MAAS ,  Syam Parayil VENUGOPALAN ,  Jan Wouter BIJLSMA

IPC: G03F7/00

Abstract: A method and system for designing a mark for use in imaging of a pattern on a substrate using a lithographic process in a lithographic apparatus. The method includes obtaining a mark construction, obtaining a spatial variation of a geometric parameter associated with the mark construction, and determining a geometry design of individual patterns of a mark based on the spatial variation and a spatial location of the mark.

公开(公告)号：US20250046577A1

公开(公告)日：2025-02-06

申请号：US18718240

申请日：2022-12-01

Applicant: ASML NETHERLANDS B.V.

Inventor： Syam Parayil VENUGOPALAN ,  Tahsin FARAZ

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/67

Abstract: Methods and apparatus are disclosed for patterning a target layer by selectively removing material. In one arrangement, the target layer is irradiated with a patterned beam. The patterned beam generates a plasma in a plasma pattern that locally interacts with the target layer to define where material is to be removed from the target layer. A bias voltage is applied to the substrate during the irradiation to control a distribution of energies of ions of the plasma impinging on the target layer.