公开(公告)号：US20230401694A1

公开(公告)日：2023-12-14

申请号：US18033786

申请日：2021-11-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Chenxi LIN ,  Yi ZOU ,  Tanbir HASAN ,  Huina XU ,  Ren-Jay KOU ,  Nabeel Noor MOIN ,  Kourosh NAFISI

IPC: G06T7/00

CPC classification number: G06T7/001 ,  G06T2207/20081 ,  G06T2207/30148

Abstract: A method and apparatus for identifying locations to be inspected on a substrate is disclosed. A defect location prediction model is trained using a training dataset associated with other substrates to generate a prediction of defect or non-defect and a confidence score associated with the prediction for each of the locations based on process-related data associated with the substrates. Those of the locations determined by the defect location prediction model as having confidences scores satisfying a confidence threshold are added to a set of locations to be inspected by an inspection system. After the set of locations are inspected, the inspection results data is obtained, and the defect location prediction model is incrementally trained by using the inspection results data and process-related data for the set of locations as training data.

公开(公告)号：US20190243259A1

公开(公告)日：2019-08-08

申请号：US16318388

申请日：2017-06-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Frank STAALS ,  Martin Jules Marie-Emile DE NIVELLE ,  Tanbir HASAN

IPC: G03F9/00 ,  G05B19/4097

CPC classification number: G03F9/7034 ,  G05B19/4097 ,  G05B2219/45028 ,  G05B2219/45031

Abstract: A method of determining topographical variation across a substrate on which one or more patterns have been applied. The method includes obtaining measured topography data representing a topographical variation across a substrate on which one or more patterns have been applied by a lithographic process; and combining the measured topography data with knowledge relating to intra-die topology to obtain derived topography data having a resolution greater than the resolution of the measured topography data. Also disclosed is a corresponding level sensor apparatus and lithographic apparatus having such a level sensor apparatus, and a more general method of determining variation of a physical parameter from first measurement data of variation of the physical parameter across the substrate and intra-die measurement data of higher resolution than the first measurement data and combining these.

公开(公告)号：US20210181642A1

公开(公告)日：2021-06-17

申请号：US17162017

申请日：2021-01-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Tanbir HASAN ,  Vivek Kumar JAIN ,  Stefan HUNSCHE ,  Bruno LA FONTAINE

IPC: G03F7/20 ,  G03F9/00

Abstract: A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.

公开(公告)号：US20240062356A1

公开(公告)日：2024-02-22

申请号：US18268924

申请日：2021-12-09

Applicant: ASML Netherlands B.V.

Inventor： Huina XU ,  Yana MATSUSHITA ,  Tanbir HASAN ,  Ren-Jay KOU ,  Namita Adrianus GOEL ,  Hongmei LI ,  Maxim PISARENCO ,  Marleen KOOIMAN ,  Chrysostomos BATISTAKIS ,  Johannes ONVLEE

IPC: G06T7/00

CPC classification number: G06T7/0004 ,  G06T2207/10061 ,  G06T2207/20021 ,  G06T2207/30148 ,  G06T2207/20081

Abstract: A method and apparatus for analyzing an input electron microscope image of a first area on a first wafer are disclosed. The method comprises obtaining a plurality of mode images from the input electron microscope image corresponding to a plurality of interpretable modes. The method further comprises evaluating the plurality of mode images, and determining, based on evaluation results, contributions from the plurality of interpretable modes to the input electron microscope image. The method also comprises predicting one or more characteristics in the first area on the first wafer based on the determined contributions. In some embodiments, a method and apparatus for performing an automatic root cause analysis based on an input electron microscope image of a wafer are also disclosed.

公开(公告)号：US20200019069A1

公开(公告)日：2020-01-16

申请号：US16468063

申请日：2017-11-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Tanbir HASAN ,  Vivek Kumar JAIN ,  Stefan HUNSCHE ,  Bruno LA FONTAINE

IPC: G03F7/20

Abstract: A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.