METHOD AND SYSTEM FOR DETERMINING INFORMATION ABOUT A TARGET STRUCTURE

    公开(公告)号:NL2023565A

    公开(公告)日:2019-08-14

    申请号:NL2023565

    申请日:2019-07-25

    Abstract: Methods and systems for determining information about a target structure are disclosed. In one arrangement, a value of an asymmetry indicator for the target structure is obtained. The value of the asymmetry indicator represents an amount of an overlay independent asymmetry in the target structure. An error in an initial overlay measurement performed on the target structure at a previous time is estimated. The estimation is performed using the obtained value of the asymmetry indicator and a relationship between values of the asymmetry indicator and overlay measurement errors caused at least partially by overlay independent asymmetries. An overlay in the target structure is determined using the initial overlay measurement and the estimated error.

    LITHOGRAPHIC APPARATUS AND METHOD FOR PERFORMING A MEASUREMENT

    公开(公告)号:NL2017945A

    公开(公告)日:2017-06-28

    申请号:NL2017945

    申请日:2016-12-07

    Abstract: A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). The lithographic apparatus has an inspection apparatus with an illumination system that utilizes illuminating radiation with a wavelength of 2-40 nm. The illumination system includes an optical element that splits the illuminating radiation into a first and a second illuminating radiation and induces a time delay to the first or the second illuminating radiation. A detector detects the radiation that has been scattered by a target structure. The inspection apparatus has a processing unit operable to control a time delay between the first scattered radiation and the second scattered radiation so as to optimize a property of the combined first and second scattered radiation.

    Metrology method and apparatus, computer program and lithographic system.

    公开(公告)号:NL2016631A

    公开(公告)日:2016-10-24

    申请号:NL2016631

    申请日:2016-04-18

    Abstract: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.

    METROLOGY APPARATUS
    7.
    发明专利

    公开(公告)号:NL2021856A

    公开(公告)日:2018-11-07

    申请号:NL2021856

    申请日:2018-10-23

    Abstract: A metrology apparatus for determining a characteristic of interest of a structure on a substrate, the apparatus comprising: a radiation source for generating illumination radiation; at least two illumination branches for illuminating the structure on the substrate, the illumination branches being configured to illuminate the structure from different angles; and a radiation switch configured to receive the 5 illumination radiation and transfer at least part of the radiation to a selectable one of the at least two illumination branches.

    METROLOGY METHOD, TARGET AND SUBSTRATE

    公开(公告)号:NL2017949A

    公开(公告)日:2017-06-28

    申请号:NL2017949

    申请日:2016-12-07

    Abstract: A method, involving illuminating at least a first periodic structure of a metrology target with a first radiation beam having a first polarization, illuminating at least a second periodic structure of the metrology target with a second radiation beam having a second different polarization, combining radiation diffracted from the first periodic structure with radiation diffracted from the second periodic structure to cause interference, detecting the combined radiation using a detector, and determining a parameter of interest from the detected combined radiation.

    METROLOGY METHODS, METROLOGY APPARATUS AND DEVICE MANUFACTURING METHOD

    公开(公告)号:NL2017943A

    公开(公告)日:2017-06-28

    申请号:NL2017943

    申请日:2016-12-07

    Abstract: Hybrid metrology apparatus (1000, 1100, 1200, 1300, 1400) measures a structure (T) manufactured by lithography. An EUV metrology apparatus (244, IL1/DET1) irradiates the structure with EUV radiation and detects a first spectrum from the structure. Another metrology apparatus (240, IL2/DET2) irradiates the structure with second radiation comprising EUV radiation or longer-wavelength radiation and detects a second spectrum. Using the detected first spectrum and the detected second spectrum together, a processor (MPU) determines a property (CD/OV) of the structure. The spectra can be combined in various ways. For example, the first detected spectrum can be used to control one or more parameters of illumination and/or detection used to capture the second spectrum, or vice versa. The first spectrum can be used to distinguish properties of different layers (T1, T2) in the structure. First and second radiation sources (SRC1, SRC2) may share a common drive laser (LAS).

    METROLOGY METHOD, TARGET AND SUBSTRATE

    公开(公告)号:NL2017466A

    公开(公告)日:2017-04-05

    申请号:NL2017466

    申请日:2016-09-15

    Abstract: A method of measuring a parameter of a lithographic process, the method including: illuminating a diffraction measurement target on a substrate with radiation, the measurement target including at least a first sub-target, at least a second sub-target and at least third sub-target, wherein the first, second and third sub-targets each include a periodic structure and wherein the first sub-target, second sub-target and third sub-target each have a different design and wherein at least two of the sub-targets are respectively designed for determination of a different lithographic process parameter; and detecting radiation scattered by the at least two sub-targets to obtain for that target a measurement representing the different parameters of the lithographic process

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