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    Lithography model for 3d resist profile simulations
    1.
    发明专利
    Lithography model for 3d resist profile simulations 有权
    三维电阻曲线模拟的算术模型

    公开(公告)号：JP2013162125A

    公开(公告)日：2013-08-19

    申请号：JP2013009055

    申请日：2013-01-22

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： LIU PENG

    IPC: H01L21/027

    CPC classification number: G06F17/5009 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70666

    Abstract: PROBLEM TO BE SOLVED: To provide a method which can reduce computational costs significantly and be applied to a substantially full circuit design or a full mask.SOLUTION: Described herein is a method for simulating a three-dimensional spatial intensity distribution of radiation formed within a resist layer on a substrate resulting from an incident radiation, the method comprising: calculating an incoherent sum of forward propagating radiation in the resist layer and backward propagating radiation in the resist layer; calculating an interference between the forward propagating radiation in the resist layer and the backward propagating radiation in the resist layer; and calculating the three-dimensional spatial intensity distribution of radiation from the incoherent sum and the interference.

    Abstract translation: 要解决的问题：提供一种可以显着降低计算成本并将其应用于基本全电路设计或完整掩模的方法。解决方案：这里描述了一种用于模拟形成在其中的辐射的三维空间强度分布的方法 抗蚀剂层，其包括：计算抗蚀剂层中的正向传播辐射和抗蚀剂层中的反向传播辐射的非相干和; 计算抗蚀剂层中的正向传播辐射与抗蚀剂层中的反向传播辐射之间的干扰; 并计算来自非相干和辐射的三维空间强度分布和干扰。

    Lithography model for 3d topographic wafer
    2.
    发明专利
    Lithography model for 3d topographic wafer 有权
    3D地形波形的平移模型

    公开(公告)号：JP2013047798A

    公开(公告)日：2013-03-07

    申请号：JP2012171799

    申请日：2012-08-02

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： LIU PENG

    IPC: G03F1/36 ,  G06F17/50 ,  H01L21/027

    CPC classification number: G03F7/705

    Abstract: PROBLEM TO BE SOLVED: To provide a method for simulating an image formed within a resist layer on a substrate resulting from an incident radiation.SOLUTION: The method for simulating an image formed within a resist layer on a substrate resulting from an incident radiation comprises: calculating a forward propagating electric field or forward propagating magnetic field resultant from the incident radiation at a depth in the resist layer; calculating a backward propagating electric field or backward propagating magnetic field resultant from the incident radiation at the depth in the resist layer; calculating a radiation field at the depth in the resist layer from the forward propagating electric field or forward propagating magnetic field and from the backward propagating electric field or backward propagating magnetic field while ignoring an interference between the forward propagating electric field or forward propagating magnetic field and the backward propagating electric field or backward propagating magnetic field.

    Abstract translation: 要解决的问题：提供一种用于模拟在由入射辐射产生的基板上的抗蚀剂层内形成的图像的方法。 解决方案：用于模拟由入射辐射产生的在衬底上的抗蚀剂层中形成的图像的方法包括：计算在抗蚀剂层中深度处从入射辐射产生的正向传播电场或正向传播磁场; 计算从抗蚀剂层深度处的入射辐射产生的反向传播电场或反向传播磁场; 从正向传播电场或正向传播磁场和反向传播电场或反向传播磁场计算抗蚀剂层深度处的辐射场，同时忽略前向传播电场或正向传播磁场与 反向传播电场或反向传播磁场。 版权所有（C）2013，JPO＆INPIT

    Lens heating aware source mask optimization for advanced lithography
    3.
    发明专利
    Lens heating aware source mask optimization for advanced lithography 有权
    镜头加热意大利面优化用于高级光刻

    公开(公告)号：JP2013165271A

    公开(公告)日：2013-08-22

    申请号：JP2013015532

    申请日：2013-01-30

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： MICHAEL MATTHEW M CROUSE ,  VAN DOMMELEN YOURI JOHANNES LAURENTIUS MARIA ,  LIU PENG ,  LIU HUA-YU ,  JIANG AIQIN ,  HUANG WENJIN

    IPC: H01L21/027 ,  G03F1/36

    CPC classification number: G06F17/5081 ,  G03F7/70125 ,  G03F7/70433 ,  G03F7/705 ,  G03F7/70891

    Abstract: PROBLEM TO BE SOLVED: To provide tools for optimizing illumination sources and mask design layouts for use in lithographic apparatuses and processes.SOLUTION: Provided is a computer-implemented method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus comprising an illumination source and projection optics, the method including: computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, at least some of the design variables being characteristics of the illumination source and the design layout, the computation of the multi-variable cost function accounting for lens heating effects; and reconfiguring the characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied.

    Abstract translation: 要解决的问题：提供用于优化用于光刻设备和工艺的照明源和掩模设计布局的工具。解决方案：提供了一种计算机实现的方法，用于改进用于将设计布局的一部分成像到基板上的光刻处理 包括照明源和投影光学器件的光刻投影设备，该方法包括：计算作为光刻工艺特征的多个设计变量的多变量成本函数，至少一些设计变量是照明源的特征 和设计布局，多变量成本函数的计算占透镜加热效果; 并且通过调整设计变量来重新配置光刻处理的特性，直到满足预定的终止条件。

    A LITHOGRAPHY MODEL FOR 3D RESIST PROFILE SIMULATIONS.
    4.
    发明专利
    A LITHOGRAPHY MODEL FOR 3D RESIST PROFILE SIMULATIONS. 未知

    公开(公告)号：NL2010162A

    公开(公告)日：2013-08-06

    申请号：NL2010162

    申请日：2013-01-22

    Applicant: ASML NETHERLANDS BV

    Inventor： LIU PENG

    IPC: G03F7/20

    Abstract: Described herein is a method for simulating a three-dimensional spatial intensity distribution of radiation formed within a resist layer on a substrate resulting from an incident radiation, the method comprising: calculating an incoherent sum of forward propagating radiation in the resist layer and backward propagating radiation in the resist layer; calculating an interference of the forward propagating radiation in the resist layer and the backward propagating radiation in the resist layer; and calculating the three-dimensional spatial intensity distribution of radiation from the incoherent sum and the interference.

    LENS HEATING AWARE SOURCE MASK OPTIMIZATION FOR ADVANCED LITHOGRAPHY.
    6.
    发明专利
    LENS HEATING AWARE SOURCE MASK OPTIMIZATION FOR ADVANCED LITHOGRAPHY. 未知

    公开(公告)号：NL2010196A

    公开(公告)日：2013-08-13

    申请号：NL2010196

    申请日：2013-01-29

    Applicant: ASML NETHERLANDS BV

    Inventor： CROUSE MICHAEL ,  DOMMELEN YOURI ,  LIU PENG ,  JIANG AIQIN ,  HUANG WENJIN ,  LIU HUA-YU

    IPC: G03F7/20

    Abstract: A computer-implemented method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus comprising an illumination source and projection optics, the method including computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, at least some of the design variables being characteristics of the illumination source and the design layout, the computing of the multi-variable cost function accounting for lens heating effects; and reconfiguring the characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied.

    METHODS FOR DETERMINING RESIST DEFORMATION
    7.
    发明专利
    METHODS FOR DETERMINING RESIST DEFORMATION 未知

    公开(公告)号：SG11201706686YA

    公开(公告)日：2017-09-28

    申请号：SG11201706686Y

    申请日：2016-02-24

    Applicant: ASML NETHERLANDS BV

    Inventor： LIU PENG

    IPC: G03F7/20

    Abstract: A method including: obtaining at least a characteristic of deformation of a resist layer in a first direction, as if there were no deformation in any directions perpendicular to the first direction; obtaining at least a characteristic of deformation of the resist layer in a second direction as if there were no deformation in the first direction, the second direction being perpendicular different to from the first direction; and obtaining at least a characteristic of three-dimensional deformation of the resist layer based on the characteristic of the deformation in the first direction and the characteristic of the deformation in the second direction.

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