公开(公告)号：US10690812B2

公开(公告)日：2020-06-23

申请号：US14854784

申请日：2015-09-15

Applicant: Carl Zeiss SMT GmbH ,  ASML Netherlands B.V.

Inventor： Hermanus Hendricus Petrus Theodorus Bekman ,  Dirk Heinrich Ehm ,  Jeroen Huijbregtse ,  Arnoldus Jan Storm ,  Tina Graber ,  Irene Ament ,  Dries Smeets ,  Edwin Te Sligte ,  Alexey Kuznetsov

IPC: G02B1/14 ,  G02B5/08 ,  G21K1/06 ,  G03F7/20 ,  C23C16/56

Abstract: An optical element (50), comprising: a substrate (52), an EUV radiation reflecting multilayer system (51) applied to the substrate, and a protective layer system (60) applied to the multilayer system and having at least a first and a second layer (57, 58). The first layer (57) is arranged closer to the multilayer system (51) than is the second layer (58) and serves as a diffusion barrier for hydrogen. This first layer (57) has a lower solubility for hydrogen than does the second layer (58), which serves for absorbing hydrogen. Also disclosed are an optical system for EUV lithography with at least one such optical element, and a method for treating an optical element in order to remove hydrogen incorporated in at least one layer (57, 58, 59) of the protective layer system and/or in at least one layer (53, 54) of the multilayer system (51).

公开(公告)号：US20200096880A1

公开(公告)日：2020-03-26

申请号：US16571956

申请日：2019-09-16

Applicant: ASML Netherlands B.V.

Inventor： Andrey NIKIPELOV ,  Vadim Yevgenyevich Banine ,  Christian Gerardus Norbertus Cloin ,  Edwin Te Sligte ,  Marcus Adrianus Van De Kerkhof ,  Ferdinandus Martinus Jozef Henri Van De Weterring

IPC: G03F7/20

Abstract: A component for use in a patterning device environment including a patterning device, wherein the component is treated to suppress EUV plasma-induced contaminant release and/or atomic hydrogen or other radicals induced defectivity. A conduit array comprising at least one conduit, wherein the at least one conduit has been treated to promote adhesion of a contaminant to the at least one conduit.

公开(公告)号：US10073361B2

公开(公告)日：2018-09-11

申请号：US15483607

申请日：2017-04-10

Applicant: Carl Zeiss SMT GmbH ,  ASML NETHERLANDS B.V.

Inventor： Dirk Heinrich Ehm ,  Stefan-Wolfgang Schmidt ,  Edgar Osorio ,  Edwin Te Sligte ,  Mark Zellenrath ,  Hella Logtenberg

IPC: G03B27/52 ,  G03F7/20

CPC classification number: G03F7/70883 ,  G03F7/70033 ,  G03F7/70341 ,  G03F7/70925

Abstract: An EUV lithography system (1) includes: at least one optical element (13, 14) having an optical surface (13a, 14a) arranged in a vacuum environment (17) of the EUV lithography system (1), and a feed device (27) for feeding hydrogen into the vacuum environment (17), in which at least one silicon-containing surface (29a) is arranged. The feed device (27) additionally feeds an oxygen-containing gas into the vacuum environment (17) and has a metering device (28) that sets an oxygen partial pressure (pO2) at the at least one silicon-containing surface (29a) and/or at the optical surface (13a, 14a).

公开(公告)号：US11048180B2

公开(公告)日：2021-06-29

申请号：US16571956

申请日：2019-09-16

Applicant: ASML Netherlands B.V.

Inventor： Andrey Nikipelov ,  Vadim Yevgenyevich Banine ,  Christian Gerardus Norbertus Hendricus Marie Cloin ,  Edwin Te Sligte ,  Marcus Adrianus Van De Kerkhof ,  Ferdinandus Martinus Jozef Henricus Van De Wetering

IPC: G03F7/20

Abstract: A component for use in a patterning device environment including a patterning device, wherein the component is treated to suppress EUV plasma-induced contaminant release and/or atomic hydrogen or other radicals induced defectivity. A conduit array comprising at least one conduit, wherein the at least one conduit has been treated to promote adhesion of a contaminant to the at least one conduit.