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    COMPOSITION AND METHOD FOR COPPER CHEMICAL MECHANICAL PLANARIZATION
    5.
    发明专利
    COMPOSITION AND METHOD FOR COPPER CHEMICAL MECHANICAL PLANARIZATION 未知

    公开(公告)号：MY133337A

    公开(公告)日：2007-11-30

    申请号：MYPI20034568

    申请日：2003-11-28

    Applicant: ATOFINA CHEM INC

    Inventor： NOSOWITZ MARTIN ,  CARROLL GLENN ,  MARTYAK NICHOLAS M ,  JANNEY PATRICK K

    IPC: H01L21/44 ,  C09G1/02 ,  H01L21/321

    Abstract: A FAMILY OF SLURRIES ARE DISCLOSED WHICH ARE USEFUL IN MODIFYING EXPOSED SURFACES OF WAFERS FOR SEMICONDUCTOR FABRICATION ARE PROVIDED ALONG WITH METHODS OF MODIFYING EXPOSED SURFACES OF WAFERS FOR SEMICONDUCTOR FABRICATION UTILIZING SUCH A FAMILY OF WORKING SLURRIES, AND SEMICONDUCTOR WAFERS. THE SLURRIES OF THE INVENTION ARE COMPRISED OF A LIQUID CARRIER;A SULFUR-BEARING COMPOUNDS CAPABLE OF CONVERTING COPPER TO COPPER SULFIDE; OPTIONALLY , ABRASIVE PARTICLES (POLISHING AGENT; OPTIONALLY A CHELATING AGENT; OPTIONALLY A BUFFERING AGENT; OPTIONALLY, A STOPPING COMPOUND; OPTIONALLY, OTHER ADDITIVES; AND OPTIONALLY,A CO-SOLVENT. THE METHOD OF THE INVENTION COMPRISES THE STEPS F : A) PROVIDING A WAFER COMPRISING A FIRST MATERIAL HAVING A SURFACE ETCHED TO FORM A PATTERN AND A SECOND MATERIAL DEPOSITED OVER THE SURFACE OF THE FIRST MATERIAL; B) CONTACTING THE SECOND MATERIAL OF THE WAFER WITH ABRASIVE IN THE PRESENCE OF THE WORKING SLURRY; AND C) RELATIVELY MOVING THE WAFER OR POLISHING PAD OR BOTH WHILE THE SECOND MATERIAL IS IN CONTACT WITH THE SLURRY AND ABRASIVE PARTICLES UNTIL AN EXPOSED SURFACE OF THE WAFER IS PLANAR AN COMPRISES AT LEAST ONE AREA OF EXPOSED FIRST MATERIAL AND ONE AREA OF EXPOSED SECOND MATERIAL.

    COPPER CHEMICAL MECHANICAL POLISHING SOLUTIONS USING SULFONATED AMPHIPROTIC AGENTS
    6.
    发明专利
    COPPER CHEMICAL MECHANICAL POLISHING SOLUTIONS USING SULFONATED AMPHIPROTIC AGENTS 未知

    公开(公告)号：MY127719A

    公开(公告)日：2006-12-29

    申请号：MYPI20034268

    申请日：2003-11-07

    Applicant: ATOFINA CHEM INC

    Inventor： MARTYAK NICHOLAS M ,  CARROLL GLENN

    IPC: C09G1/04 ,  C09K13/00 ,  C09K3/14 ,  C11D1/88 ,  H01L21/321

    Abstract: A FAMILY OF SLURRIES USEFUL IN MODIFYING EXPOSED SURFACES OF WAFERS FOR SEMICONDUCTOR FABRICATION ARE PROVIDED ALONG WITH METHODS OF MODIFYING EXPOSED SURFACES OF WAFERS FOR SEMICONDUCTOR FABRICATION UTILIZING SUCH A FAMILY OF WORKING SLURRIES, AND SEMICONDUCTOR WAFERS. THE SLURRIES OF THE INVENTION ARE A SOLUTION OF INITIAL COMPONENTS, THE COMPONENTS COMPRISING: A SULFONATED ZWITTERION SELECTED FROM 2-(N-MORPHOLINO)ETHANESULFONIC ACID, (3-[N- MORPHOLINO] )PROPANESUL FONIC ACID, 2- [(2-AMINO-2 -OXOETHYL) AMINO] ETHANESULFONIC ACID, PIP ERAZINE-N,N’ -BI S(2 -ETHANE SULFONIC ACID), 3- (N-MORPHOLINO) -2 -HYDROXYPROPANE SULFONIC ACID, N,N-BI S(2 -HYDROXYETHYL)-2-AMINOETHANE SULFONIC ACID, 3- (N-MORPHOLINO)PROPANESUL FONIC ACID, N- (2 -HYDROXYETHYL)PIPERAZINE-N’ -(2 -ETHANESULFONIC ACID), N-TRIS(HYDROXYMETHYL)METHYL -2 AMINOETHANE SULFONIC ACID, 3- [N,N-BI S(2 -HYDROXYETHYL)AMINO] -2-HYDROXYPROPANESULFONIC ACID, 3- [N-TN S(HYDROXYMETHYL)METHYL AMINO) -2 -HYDROXYPROPANESULFONIC ACID, N-(2- HYDROXYETHYL)PIPERAZINE-N’ -(2 -HYDROXYPROPANESUL FONIC ACID), PIPERAZINE-N,N’ -BI S(2 - HYDROXYPROPANESUL FONIC ACID), N- (2 -HYDROXYETHYL)PIPERAZINE-N’-(3 -PROPANESULFONIC ACID), N- TN S (HYDROXYMETHYL)METHYL -3- AMINOPROPANE SULFONIC ACID, 3- [(1,1 -DIMETHY 1-2- HYDROXYETHYL) AMINO] - 2-HYDROXYPROPANE SULFONIC, ACID, 2- (N-CYCIOHEXYL AMINO) ETHANESUL FONIC ACID, 3- (CYCLOHEXYL AMINO) -2 -HYDROXY-I-PROPANESUL FONIC ACID, 2-AMINO -2-METHYL- 1 -PROPANOL, 3- (CYCLOHEXYLAMINO)- 1 -PROPANESULFONIC ACID, AN OXIDIZING AGENT; OPTIONALLY, A PASSIVATING AGENT; OPTIONALLY A CHELATING AGENT, OPTIONALLY ABRASIVE PARTICLES, OPTIONALLY A SURFACTANT, OPTIONALLY A SECONDARY BUFFERING AGENT AND WATER. THE METHOD OF THE INVENTION COMPRISES THE STEPS OF: A) PROVIDING A WAFER COMPRISING A FIRST MATERIAL HAVING A SURFACE ETCHED TO FORM A PATTERN AND A SECOND MATERIAL DEPOSITED OVER THE SURFACE OF THE FIRST MATERIAL; B) CONTACTING THE SECOND MATERIAL OF THE WAFER WITH ABRASIVE IN THE PRESENCE OF THE

    COPPER CHEMICAL MECHANICAL POLISHING SOLUTIONS USING SULFONATED AMPHIPROTIC AGENTS
    8.
    发明专利
    COPPER CHEMICAL MECHANICAL POLISHING SOLUTIONS USING SULFONATED AMPHIPROTIC AGENTS 未知

    公开(公告)号：AU2003288934A1

    公开(公告)日：2004-06-03

    申请号：AU2003288934

    申请日：2003-10-29

    Applicant: ATOFINA CHEM INC

    Inventor： MARTYAK NICHOLAS M ,  CARROLL GLENN

    IPC: C09G1/04 ,  C09K3/14 ,  H01L21/321

    Abstract: A family of slurries useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working slurries, and semiconductor wafers. The slurries of the invention are a solution of initial components, the components comprising: a sulfonated zwitterion selected from 2-(N-Morpholino)ethanesulfonic acid, (3-[N-Morpholino])propanesulfonic acid, 2-[(2-Amino-2-oxoethyl)amino]ethanesulfonic acid, Piperazine-N, N'-bis(2-ethanesulfonic acid), 3-(N-Morpholino)-2-hydroxypropanesulfonic acid, N ,N-Bis(2-hydroxyethyl)-2-aminoethanesulfonic acid, 3-(N-Morpholino)propanesulfonic acid, N-(2-Hydroxyethyl)piperazine-N'-(2-ethanesulfonic acid), N-Tris(hydroxymethyl)methyl-2 aminoethanesulfonic acid, 3-[N ,N-Bis(2-hydroxyethyl)amino]-2-hydroxypropanesulfonic acid, 3-[N-Tris(hydroxymethyl)methylamino)-2-hydroxypropanesulfonic acid, N-(2-hydroxyethyl)piperazine-N'-(2-hydroxypropanesulfonic acid), Piperazine-N ,N'-bis(2-hydroxypropanesulfonic acid), N-(2-Hydroxyethyl)piperazine-N'-(3-propanesulfonic acid), N-Tris(hydroxymethyl)methyl-3-aminopropanesulfonic acid, 3-[(1,1-Dimethy 1-2-hydroxyethyl)amino]-2-hydroxypropanesulfonic, acid, 2-(N-Cyclohexylamino)ethanesulfonic acid, 3-(Cyclohexylamino)-2-hydroxy-I-propanesulfonic acid, 2-Amino-2-methyl-I-propanol, 3-(Cyclohexylamino)-1-propanesulfonic acid, an oxidizing agent; optionally, a passivating agent; optionally a chelating agent, optionally abrasive particles, optionally a surfactant, optionally a secondary buffering agent and water. The method of the invention comprises the steps of: a) providing a wafer comprising a first material having a surface etched to form a pattern and a second material deposited over the surface of the first material; b) contacting the second material of the wafer with abrasive in the presence of the working slurry; and c) relatively moving the wafer or polishing pad or both while the second material is in contact with the slurry and abrasive particles until an exposed surface of the wafer is planar and comprises at least one area of exposed first material and one area of exposed second material.

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