公开(公告)号：JP2003240930A

公开(公告)日：2003-08-27

申请号：JP2002035994

申请日：2002-02-13

Applicant: ATR ADVANCED TELECOMM RES INST

Inventor： KUBOTA KAZUYOSHI ,  PABLO BACCALO ,  AIDA TADAHITO

IPC: G02B26/08 ,  B81B3/00 ,  G02B5/08 ,  G02B5/122 ,  G02B5/136 ,  G02B7/198

Abstract: PROBLEM TO BE SOLVED: To provide a reflector in which three reflection layers are exactly combined at a specified angle, and which is miniaturized and is easily manufactured and a manufacturing method therefor. SOLUTION: The reflection layers 6 at a first, a second, and a third region 601, 602, 603 are separated from the reflection layer 6 at a peripheral region by a separation groove 11. The first region 601 is bent in a valley shape with respect to a substrate 1 by a valley-like bent groove 10. The first region 610 and the second region 602 are bent in the valley shape by the valley-like bent groove 10, respectively. The third region 603 is bent in the valley shape with respect to the substrate 1 by the valley-like bent groove 10. The second region 602 and the third region 603 are bent in a mountain shape by a mountain like- bent line 20. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003121896A

公开(公告)日：2003-04-23

申请号：JP2001317895

申请日：2001-10-16

Applicant: ATR ADVANCED TELECOMM RES INST

Inventor： ANDO TARO ,  HOSODA MAKOTO ,  NISHIMURA KOTA ,  AIDA TADAHITO

IPC: G02F2/02

Abstract: PROBLEM TO BE SOLVED: To provide a wavelength conversion element capable of converting incident light of any wavelength into light of a shorter wavelength, and to provide a wavelength conversion device using the same. SOLUTION: The wavelength conversion element includes a unit element 32 and a unit element 33. The unit elements 32, 33 include barrier layers 41, 43 and well layers 42, 44. The barrier layers 41, 43 are formed of AlAs, and the well layers 42, 44 are formed of GaAs. An electron 51 excited at a sub- energy level 11 in the well layer 42 of the unit element 32 reaches a sub-energy level 15 in the well layer 44 via a sub-energy level 21 in the barrier layer 43. Moreover, a positive hole 52 generated in the well layer 42 of the unit element 33 reaches the well layer 44 of the unit element 32 via the barrier layer 41. Then, the electron 51 at the sub-energy level 15 is re-coupled with the positive hole at a sub-energy level 17, and thereby the exit light is emitted.

公开(公告)号：JP2003133583A

公开(公告)日：2003-05-09

申请号：JP2001331274

申请日：2001-10-29

Applicant: ATR ADVANCED TELECOMM RES INST

Inventor： PABLO BACCALO ,  KUBOTA KAZUYOSHI ,  AIDA TADAHITO

IPC: G01C1/00 ,  G01B11/26 ,  H01L27/14 ,  H01L31/10 ,  H01L31/16

Abstract: PROBLEM TO BE SOLVED: To provide a direction detection element capable of being miniaturized and thinned down and accurately detecting the direction of incident light, and a manufacturing method therefor. SOLUTION: Four rectangular contact pads 201-204 are respectively arranged on four PIN photodiodes formed on a substrate. Among the contact pads 201-204, four walls 301-304 radially extended at an angle of 90 degrees to each other with a reference point P as a center are provided. A recess 10 is formed along one side of the walls 301-304 and a groove 11 is formed along the other side and the side around an end part. Rectangular light receiving areas 101-104 of the PIN photodiodes are respectively formed so as to be adjacent through the recess 10 to one side of the walls 301-304. By curving the walls 101-104 along the recess 10, the walls 101-104 are vertically erected.