公开(公告)号：JP2001237239A

公开(公告)日：2001-08-31

申请号：JP2000388743

申请日：2000-12-21

Applicant: AXCELIS TECH INC

Inventor： MITZAN JOHN MICHAEL

IPC: C23C16/455 ,  H01L21/00 ,  H01L21/22 ,  H01L21/31 ,  H01L21/324

Abstract: PROBLEM TO BE SOLVED: To provide a heat process chamber with a gas dispersion function for processing a substrate stored in the chamber. SOLUTION: The heat process chamber (10) used for processing the substrate stored includes a main process (12), in which the substrate to be processed is mounted, and the main process (12) has an opening part (21) for defining a first region (44), inserting the substrate into the first region (44), and removing the substrate from the first region (44). A upper part (11) above the main process part (12) for defining a second region (39) and having an closing edge part of the process chamber, and a gas dispersing plate (20) for separating the first region (44) from the second region (39), are provided in the heat process chamber (10).