公开(公告)号：JP2002033311A

公开(公告)日：2002-01-31

申请号：JP2001125854

申请日：2001-04-24

Applicant: AXCELIS TECH INC

Inventor： KINNARD DAVID W ,  RICHARDSON DANIEL BRIAN

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  G03F7/42 ,  H01J37/32 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus and a gas dispersing plate which lower the gas temperature of a gas used in a wafer treatment apparatus, while not damaging a wafer during ashing treatment. SOLUTION: This plasma treatment apparatus 10 has a plasma generator 14 and an inner chamber 17, communicating with the plasma generator 14 so as to be made to react with a wafer 18 surface. This apparatus also includes a wall 53 for forming the inner chamber at least partially and further has a treatment chamber 16 provided with a first cooling passage to this wall, an inlet and an outlet for a cooling medium and a radiative heating assembly 20 for heating the wafer 18. Further, the apparatus also includes a gas dispersing plate, that is, a baffle plate, which is equipped with a cooling passage for lowering the operation temperature during wafer treatment. The wall of the treatment chamber and the cooling passage of the baffle plate constitute a cooling circulation system, while communicating with each other.

公开(公告)号：JP2001176795A

公开(公告)日：2001-06-29

申请号：JP2000368421

申请日：2000-12-04

Applicant: AXCELIS TECH INC

Inventor： MOHONDRO ROBERT D ,  JOAN SCOTT HALLOCK

IPC: G03F1/00 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method for modifying a photoresist features that have been exposed and developed. SOLUTION: Photoresist features are exposed to at least one compound. The compound reacts with itself and one component of the photoresist, and the reaction is carried out in the presence of one component. The photoresist feature is exposed to the energy of reaction initiation prior to the exposure of the photoresist feature, at exposure, or at least at a time after the exposure to the compound.

公开(公告)号：JP2002151429A

公开(公告)日：2002-05-24

申请号：JP2001219685

申请日：2001-07-19

Applicant: AXCELIS TECH INC

Inventor： DIVERGILIO WILLIAM FRANK ,  KELLERMAN PETER L ,  RYAN KEVIN T

IPC: H05H1/46 ,  B01J19/08 ,  C23C14/48 ,  H01J37/32 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/36

Abstract: PROBLEM TO BE SOLVED: To provide an RF plasma generator provided with a resonance circuit type oscillator, and also to provide a wafer processing system. SOLUTION: The wafer processing system comprises a wafer handling system for introducing a wafer into a processing chamber 20, and has an oscillator 80 that is operatively coupled to an antenna 30a for generating a plasma 94 in the processing chamber. The plasma 94 and the antenna 30a form a resonance circuit together with the oscillator 80. During plasma ignition, the oscillator changes associated output characteristics based on a change in load in the resonance circuit.

公开(公告)号：JP2002056786A

公开(公告)日：2002-02-22

申请号：JP2001233659

申请日：2001-08-01

Applicant: AXCELIS TECH INC

Inventor： VANDERBERG BO HARALD ,  HORSKY THOMAS N ,  TRUEIRA FRANK RAYMOND

IPC: H01J27/02 ,  H01J27/18 ,  H01J37/08 ,  H01J37/30

Abstract: PROBLEM TO BE SOLVED: To provide an ion source for ion implanting equipment enabling to have very high ionization efficiency, by generating a powerful and uniform magnetic field in an ionization room, and by maintaining it. SOLUTION: The ion source is constituted with an ionization room with an opening 18, partially divided with a wall, and along the path of which an ion beam is extracted and a magnet assembly 45 with, a yoke 46 of the closed form surrounding the whole ionization room in which at least one of coils 49, 51 is twisted around the yoke. The yoke 46 has, generally, a troidal shape and includes a pair of opposite magnetic poles 48a, 48b. Most of magnetic line of flux generated by the coils during operation of the ion source, comes out from the 1st opposite magnetic pole 48a, and passes through the ionization room, and goes into the 2nd opposite magnetic pole 48b. A floating magnetic field generated from the magnet assembly 45 directs in the direction which intersects perpendicularly with the path of the ion beam extracted from the opening 18, and becomes comparatively uniform in the interior of the ionization room.

公开(公告)号：JP2001237239A

公开(公告)日：2001-08-31

申请号：JP2000388743

申请日：2000-12-21

Applicant: AXCELIS TECH INC

Inventor： MITZAN JOHN MICHAEL

IPC: C23C16/455 ,  H01L21/00 ,  H01L21/22 ,  H01L21/31 ,  H01L21/324

Abstract: PROBLEM TO BE SOLVED: To provide a heat process chamber with a gas dispersion function for processing a substrate stored in the chamber. SOLUTION: The heat process chamber (10) used for processing the substrate stored includes a main process (12), in which the substrate to be processed is mounted, and the main process (12) has an opening part (21) for defining a first region (44), inserting the substrate into the first region (44), and removing the substrate from the first region (44). A upper part (11) above the main process part (12) for defining a second region (39) and having an closing edge part of the process chamber, and a gas dispersing plate (20) for separating the first region (44) from the second region (39), are provided in the heat process chamber (10).

公开(公告)号：JP2001222970A

公开(公告)日：2001-08-17

申请号：JP2000387423

申请日：2000-12-20

Applicant: AXCELIS TECH INC

Inventor： SAADATMAND KOUROSH ,  SWENSON DAVID RICHARD ,  DIVERGILIO WILLIAM FRANK ,  QUINN STEPHEN MICHAEL ,  WAN ZHIMIN ,  BENVENISTE VICTOR M

IPC: H01J37/04 ,  H01J37/12 ,  H01J37/16 ,  H01J37/317

Abstract: PROBLEM TO BE SOLVED: To provide an electrical insulator tetrode lens assembly preventing insulation breakdown caused by voltage. SOLUTION: The electrostatic tetrode lens assembly 60 comprises four electrodes, namely, a first electrode pair 84a, 84c each of which is laid out from the axial line 86 to the outside of the radial direction approximately 90 deg. apart and located at the opposite sides 180 deg. apart and a second electrode pair 84b, 84d located at opposite sides 180 deg. apart, the housing 62 equipped with the installation surface 64 to install the electrostatic tetrode lens assembly 60 on the ion injection device, the first and the second electric leads 104, 108 to supply power to the above No.1 and No.2 electrode pairs 104, 108, and a plural number of electric insulation members 92 made of a glass material including the first, the second electric insulation members to mount the first, the second electrode pairs on the housing. The insulation materials have a resistance to the accumulated graphite scattered from the electrodes and diminish breakdown by a high voltage/current.

公开(公告)号：JP2001313280A

公开(公告)日：2001-11-09

申请号：JP2001096545

申请日：2001-03-29

Applicant: AXCELIS TECH INC

Inventor： WALDFRIED CARLO ,  BAUSUM TERESA HOPE ,  BERRY IVAN LOUIS III

IPC: H01L21/302 ,  G03F7/42 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: PROBLEM TO BE SOLVED: To provide an improved plasma ashing process for removing a photoresist and a postetched residue. SOLUTION: The method for removing the photoresist and the postetched residue comprises the steps of (a.) disposing a substrate having the photoresist and the postetched residue on the substrate, (b.) forming a reactive chemical species by adding a plasma gas composition containing a CHF3 as its one component, and (c.) exposing a surface of the substrate in a reaction chamber with its reactive chemical species.

公开(公告)号：JP2001250855A

公开(公告)日：2001-09-14

申请号：JP2000380352

申请日：2000-12-14

Applicant: AXCELIS TECH INC

Inventor： RYAN KEVIN T ,  KELLERMAN PETER L ,  FURANKU SHINKUREA ,  ALLEN ERNEST E JR ,  FISH ROGER B

IPC: B65G49/07 ,  C23C14/50 ,  C23C16/44 ,  H01L21/677 ,  H01L21/68 ,  H01L21/687

Abstract: PROBLEM TO BE SOLVED: To provide a wafer handling system for increasing wafer treatment capacity by decreasing contamination in a treatment chamber, and a wafer carrying method for it. SOLUTION: A wafer handling system 200 is provided with a load lock chamber 206 for wafers, a treatment chamber 202 for wafers, and a carrying chamber 204 that connects the load lock chamber to the treatment chamber and includes a wafer carrying mechanism. A wafer mechanism is provided with a carrying arm that is connected to one portion of the carrying chamber 204 forming one axis rotatably, and the carrying arm can be rotated around a single axis for carrying the wafers between the load lock chamber 206 and the treatment chamber by single axis operation. The method for carrying wafers includes steps for placing the wafers in the load lock chamber 206, rotating the carrying arm into the load lock chamber to take out the wafers, rotating the carrying arm out of the load lock chamber 206 into the treatment chamber, and placing the wafers in the treatment chamber 202.

公开(公告)号：JP2001210266A

公开(公告)日：2001-08-03

申请号：JP2000361124

申请日：2000-11-28

Applicant: AXCELIS TECH INC

Inventor： MCINTYRE EDWARD K JR ,  ALLEN ERNEST E JR ,  JONES MARY A ,  NAKATSUGAWA TOMOYA

IPC: C23C14/48 ,  H01J37/00 ,  H01J37/09 ,  H01J37/317 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To offer the operating method for an ion implantation device to reduce X-ray radiation and to provide the necessary constitutional parts therefor. SOLUTION: As the constitutional parts for the ion implantation device, the electrode 72 for the RF linear accelerator 20 is filmed with a film material. This film material has an atomic mass less than that of the lower layer of electrodes and the electron colliding with the above film results in discharging less X-ray than the electron collides with the above electrode. The electrode 72 is made of aluminum and the film 114 is made of a carbon-based material, namely a film material of synthetic diamond or of materials similar to diamond. This film is of 2 to 10 micron and made by a chemical vapor deposition.

公开(公告)号：JP2001203195A

公开(公告)日：2001-07-27

申请号：JP2000339066

申请日：2000-11-07

Applicant: AXCELIS TECH INC

Inventor： KINNARD DAVID W ,  CARDOSO ANDRE G

IPC: H05H1/00 ,  F24D9/00 ,  G03F7/42 ,  H01L21/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46

Abstract: PROBLEM TO BE SOLVED: To provide a plasma process device, a temperature control device, and its control method used in ashing for removing a photoresist or residue. SOLUTION: A temperature control device for a plasma process device 10 which comprises plasma generator 14 and a process chamber 16 communicating with it comprises a radiation heating assembly 20 provided with a radiation heating element 58 provided in each zone, and a condensing reflector 56 for converging a radiation energy from the radiation heating element toward a substrate, a feedback mechanism 24 which provides a temperature feedback signal for the substrate, and a controller 22 wherein a temperature set point signal 27 and a temperature feedback signal 25 are received and the output applied to a zone comprising the radiation heating element is independently controlled. The controller comprises a PID closed loop controller and a lamp output controller.