公开(公告)号：JP2001176795A

公开(公告)日：2001-06-29

申请号：JP2000368421

申请日：2000-12-04

Applicant: AXCELIS TECH INC

Inventor： MOHONDRO ROBERT D ,  JOAN SCOTT HALLOCK

IPC: G03F1/00 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method for modifying a photoresist features that have been exposed and developed. SOLUTION: Photoresist features are exposed to at least one compound. The compound reacts with itself and one component of the photoresist, and the reaction is carried out in the presence of one component. The photoresist feature is exposed to the energy of reaction initiation prior to the exposure of the photoresist feature, at exposure, or at least at a time after the exposure to the compound.