公开(公告)号：WO1997000535A1

公开(公告)日：1997-01-03

申请号：PCT/US1996008678

申请日：1996-06-04

Applicant: ALLIEDSIGNAL INC.

Inventor： ALLIEDSIGNAL INC. ,  FORESTER, Lynn ,  HENDRICKS, Neil, H. ,  KYU-CHOI, Dong

IPC: H01L21/316

CPC classification number: H01L21/02126 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/3122

Abstract: An improved method for producing substrates coated with dielectric films for use in microelectronic applications wherein the films are processed by exposing the coated substrate surfaces to a flux of electron beam. Substrates cured via electron beam exposure possess superior dielectric properties, density, uniformity, thermal stability, and oxygen stability.

Abstract translation: 一种用于生产用于微电子应用中的用介电膜涂覆的衬底的改进方法，其中通过将涂覆的衬底表面暴露于电子束通量来处理膜。 通过电子束曝光固化的基板具有优异的介电性能，密度，均匀性，热稳定性和氧稳定性。

公开(公告)号：WO1997001864A1

公开(公告)日：1997-01-16

申请号：PCT/US1996010836

申请日：1996-06-26

Applicant: ALLIEDSIGNAL INC.

Inventor： ALLIEDSIGNAL INC. ,  FORESTER, Lynn ,  CHOI, Dong, K. ,  HOSSEINI, Reza

IPC: H01L21/3105

CPC classification number: H01L21/31053

Abstract: A method for forming a gap-filled, planarization structure of dielectric materials on a substrate topography useful for forming microelectronic devices. A dielectric material is first deposited as continuous, dry dielectric layer, preferably a SOG layer. Then the dielectric layer is partially removed by chemical-mechanical polishing (CMP). The chemical and mechanical properties of the structure can be chosen by varying the composition of the SOG layer and the subsequent CMP conditions.

Abstract translation: 一种用于在用于形成微电子器件的衬底地形上形成间隙填充的介电材料平面化结构的方法。 首先将介电材料沉积为连续的干电介质层，优选为SOG层。 然后通过化学机械抛光（CMP）部分去除电介质层。 可以通过改变SOG层的组成和随后的CMP条件来选择结构的化学和机械性质。

公开(公告)号：EP0836746A1

公开(公告)日：1998-04-22

申请号：EP96923416.0

申请日：1996-06-26

Applicant: AlliedSignal Inc.

Inventor： FORESTER, Lynn ,  CHOI, Dong, K. ,  HOSSEINI, Reza

IPC: H01L21

CPC classification number: H01L21/31053

Abstract: A method for forming a gap-filled, planarization structure of dielectric materials on a substrate topography useful for forming microelectronic devices. A dielectric material is first deposited as continuous, dry dielectric layer, preferably a SOG layer. Then the dielectric layer is partially removed by chemical-mechanical polishing (CMP). The chemical and mechanical properties of the structure can be chosen by varying the composition of the SOG layer and the subsequent CMP conditions.

公开(公告)号：EP1050075A1

公开(公告)日：2000-11-08

申请号：EP99903196.6

申请日：1999-01-19

Applicant: AlliedSignal Inc.

Inventor： YANG, Jingjun ,  DRAGE, James, S. ,  FORESTER, Lynn

IPC: H01L21/312 ,  B05D3/06

CPC classification number: H01L21/316 ,  B05D3/068 ,  B05D5/12

Abstract: Nanoporous silica dielectric films are modified by electron beam exposure after an optional hydrophobic treatment by an organic reactant. After formation of the film onto a substrate, the substrate is placed inside a large area electron beam exposure system. The resulting films are characterized by having a low dielectric constant and low water or silanol content compared to thermally cured films. Also, e-beam cured films have higher mechanical strength and better resistance to chemical solvents and oxygen plasmas compared to thermally cured films.

公开(公告)号：EP0970519A1

公开(公告)日：2000-01-12

申请号：EP98911525.8

申请日：1998-03-09

Applicant: AlliedSignal Inc.

Inventor： YANG, Jing, Jun ,  FORESTER, Lynn ,  CHOI, Dong, Kyu ,  WANG, Shi-Qing ,  HENDRICKS, Neil, H.

IPC: H01L21/768 ,  H01L21/312

CPC classification number: H01L21/02137 ,  H01L21/02134 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/76825 ,  Y10S430/143

Abstract: A process for the preparation of substrates used in the manufacture of integrated circuits wherein spin-on low dielectric constant (low-k) polymer films are applied on semiconductor substrates. A non-etchback processing of spin-on low-k polymer films, without losing the low dielectric constant feature of the film, especially inbetween metal lines, is achieved utilizing electron beam radiation. A polymeric dielectric film (7, 8) is applied and dried onto a substrate and exposed to electron beam radiation under conditions sufficient to partially cure the dielectric layer. The exposing forms a relatively more hardened topmost portion (8) of the dielectric layer and a relatively less hardened underlying portion (7) of the dielectric layer.

公开(公告)号：EP0834193A1

公开(公告)日：1998-04-08

申请号：EP96919059.0

申请日：1996-06-04

Applicant: AlliedSignal Inc.

Inventor： FORESTER, Lynn ,  HENDRICKS, Neil, H. ,  KYU-CHOI, Dong

IPC: H01L21

CPC classification number: H01L21/02126 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/3122

Abstract: An improved method for producing substrates coated with dielectric films for use in microelectronic applications wherein the films are processed by exposing the coated substrate surfaces to a flux of electron beam. Substrates cured via electron beam exposure possess superior dielectric properties, density, uniformity, thermal stability, and oxygen stability.