公开(公告)号：US20220224077A1

公开(公告)日：2022-07-14

申请号：US17148408

申请日：2021-01-13

Applicant: Apple Inc.

Inventor： Chih-Wei Chuang ,  Peter L. Chang ,  Tong Chen

IPC: H01S5/187 ,  H01S5/026 ,  H01S5/028

Abstract: An optoelectronic device includes an off-cut III-V semiconductor substrate, a set of epitaxial layers formed on the off-cut III-V semiconductor substrate, and a horizontal cavity surface-emitting laser (HCSEL) having a laser resonant cavity formed in the set of epitaxial layers. The same or another optoelectronic device includes a semiconductor substrate; a laser, epitaxially grown on the semiconductor substrate and having a laser resonant cavity; a semiconductor device, epitaxially grown on the semiconductor substrate and separated from the laser by a single trench having a first vertical wall abutting the laser and a second vertical wall abutting the semiconductor device; and at least one coating on at least one of the first vertical wall or the second vertical wall. The laser resonant cavity of the laser has a horizontal portion parallel to the semiconductor substrate, and each of the first vertical wall and the second vertical wall is oriented perpendicular to the semiconductor substrate.

公开(公告)号：US11909175B2

公开(公告)日：2024-02-20

申请号：US17148408

申请日：2021-01-13

Applicant: Apple Inc.

Inventor： Chih-Wei Chuang ,  Peter L. Chang ,  Tong Chen

IPC: H01S5/18 ,  H01S5/187 ,  H01S5/026 ,  H01S5/028 ,  H01S5/32

CPC classification number: H01S5/187 ,  H01S5/028 ,  H01S5/0262 ,  H01S5/0264 ,  H01S5/18 ,  H01S5/3202 ,  H01S5/0287

Abstract: An optoelectronic device includes an off-cut III-V semiconductor substrate, a set of epitaxial layers formed on the off-cut III-V semiconductor substrate, and a horizontal cavity surface-emitting laser (HCSEL) having a laser resonant cavity formed in the set of epitaxial layers. The same or another optoelectronic device includes a semiconductor substrate; a laser, epitaxially grown on the semiconductor substrate and having a laser resonant cavity; a semiconductor device, epitaxially grown on the semiconductor substrate and separated from the laser by a single trench having a first vertical wall abutting the laser and a second vertical wall abutting the semiconductor device; and at least one coating on at least one of the first vertical wall or the second vertical wall. The laser resonant cavity of the laser has a horizontal portion parallel to the semiconductor substrate, and each of the first vertical wall and the second vertical wall is oriented perpendicular to the semiconductor substrate.

公开(公告)号：US20230070515A1

公开(公告)日：2023-03-09

申请号：US17467884

申请日：2021-09-07

Applicant: Apple Inc.

Inventor： Yifei Wang ,  Chih-Wei Chuang ,  Xiaoyang Zhang ,  Zhenbin Ge

IPC: G01S7/481 ,  G01S7/4912 ,  G01S17/04

Abstract: An electronic device may include a proximity sensor for detecting whether an external object is in the vicinity of the device. The proximity sensor may be implemented as an optical sensor module having a substrate, a light emitter die mounted on the substrate, a light detector die mounted on the substrate, and a package enclosure housing the light emitter and detector dies within the module. A infrared bandpass filter layer may be formed directly on the light detector die. The light detector die may have sidewalls at least partially covered by an opaque coating. The light detector die may include a highly doped backside reflection absorption layer interposed between an intrinsic absorption layer and an n-type layer within the light detector die. Opaque adhesive material may be used to mount the light detector die onto the surface of the substrate.