公开(公告)号：US11909175B2

公开(公告)日：2024-02-20

申请号：US17148408

申请日：2021-01-13

Applicant: Apple Inc.

Inventor： Chih-Wei Chuang ,  Peter L. Chang ,  Tong Chen

IPC: H01S5/18 ,  H01S5/187 ,  H01S5/026 ,  H01S5/028 ,  H01S5/32

CPC classification number: H01S5/187 ,  H01S5/028 ,  H01S5/0262 ,  H01S5/0264 ,  H01S5/18 ,  H01S5/3202 ,  H01S5/0287

Abstract: An optoelectronic device includes an off-cut III-V semiconductor substrate, a set of epitaxial layers formed on the off-cut III-V semiconductor substrate, and a horizontal cavity surface-emitting laser (HCSEL) having a laser resonant cavity formed in the set of epitaxial layers. The same or another optoelectronic device includes a semiconductor substrate; a laser, epitaxially grown on the semiconductor substrate and having a laser resonant cavity; a semiconductor device, epitaxially grown on the semiconductor substrate and separated from the laser by a single trench having a first vertical wall abutting the laser and a second vertical wall abutting the semiconductor device; and at least one coating on at least one of the first vertical wall or the second vertical wall. The laser resonant cavity of the laser has a horizontal portion parallel to the semiconductor substrate, and each of the first vertical wall and the second vertical wall is oriented perpendicular to the semiconductor substrate.

公开(公告)号：US20220224077A1

公开(公告)日：2022-07-14

申请号：US17148408

申请日：2021-01-13

Applicant: Apple Inc.

Inventor： Chih-Wei Chuang ,  Peter L. Chang ,  Tong Chen

IPC: H01S5/187 ,  H01S5/026 ,  H01S5/028

Abstract: An optoelectronic device includes an off-cut III-V semiconductor substrate, a set of epitaxial layers formed on the off-cut III-V semiconductor substrate, and a horizontal cavity surface-emitting laser (HCSEL) having a laser resonant cavity formed in the set of epitaxial layers. The same or another optoelectronic device includes a semiconductor substrate; a laser, epitaxially grown on the semiconductor substrate and having a laser resonant cavity; a semiconductor device, epitaxially grown on the semiconductor substrate and separated from the laser by a single trench having a first vertical wall abutting the laser and a second vertical wall abutting the semiconductor device; and at least one coating on at least one of the first vertical wall or the second vertical wall. The laser resonant cavity of the laser has a horizontal portion parallel to the semiconductor substrate, and each of the first vertical wall and the second vertical wall is oriented perpendicular to the semiconductor substrate.

公开(公告)号：US20240069248A1

公开(公告)日：2024-02-29

申请号：US18119591

申请日：2023-03-09

Applicant: Apple Inc.

Inventor： Mohamed Mahmoud ,  Huiyang Deng ,  Satyarth Suri ,  Jason S. Pelc ,  Peter L. Chang

IPC: G02B1/118 ,  G02B1/02 ,  G02B6/122

CPC classification number: G02B1/118 ,  G02B1/02 ,  G02B6/122 ,  G02B2006/12061

Abstract: Anti-reflective optical structures are disclosed. The anti-reflective optical structures include sub-wavelength structures in order to produce one or more index of refraction gradients within the anti-reflective optical structures. The one or more index of refraction gradients can reduce reflection of light over a broad band of wavelengths.