Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus
    1.
    发明申请
    Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus 有权
    用于半导体加工设备的耐卤化阳极氧化铝

    公开(公告)号:US20030150530A1

    公开(公告)日:2003-08-14

    申请号:US10071869

    申请日:2002-02-08

    CPC classification number: C25D11/16 C25D11/04 C25D11/045

    Abstract: We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film can be controlled by maintaining the content of mobile impurities within a specific range and controlling the particulate size and distribution of the mobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330null C.; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.

    Abstract translation: 我们已经发现,通过将移动杂质的含量保持在特定范围内,可以控制在铝合金制品表面形成的夹杂物,其夹杂物干扰从合金表面到上覆的氧化铝保护膜的平滑过渡 并控制可移动杂质及其化合物的颗粒尺寸和分布; 通过在低于约330℃的温度下对铝合金进行热处理; 并通过使用特定的电解工艺制备氧化铝保护膜。 当考虑这些因素时,获得改进的氧化铝保护膜。

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