公开(公告)号：US20200048784A1

公开(公告)日：2020-02-13

申请号：US16656026

申请日：2019-10-17

Applicant: Applied Materials, Inc.

Inventor： Ismail EMESH ,  Roey SHAVIV ,  Chris PABELICO

IPC: C25D3/18 ,  C25D7/12

Abstract: Implementations of the disclosure may include methods of electroplating features formed on a semiconductor device, such as the trenches and vias formed by single or dual Damascene processes using a cobalt plating bath. The cobalt electroplating bath may contain “additive packages” or “additive systems” that include a combination of additives in certain ratios that facilitate the metal filling of high aspect ratio sub-micrometer features. Implementations of the disclosure provide new cobalt plating bath methods and chemistries and that include alkyl modified imidazoles, imidazolines, and imidazolidines suppressor compounds.

公开(公告)号：US20170247806A1

公开(公告)日：2017-08-31

申请号：US15419430

申请日：2017-01-30

Applicant: Applied Materials, Inc.

Inventor： Ismail EMESH ,  Roey SHAVIV ,  Chris PABELICO

IPC: C25D3/18 ,  C25D7/12

CPC classification number: C25D3/18 ,  C25D7/123

Abstract: Implementations of the disclosure may include methods of electroplating features formed on a semiconductor device, such as the trenches and vias formed by single or dual Damascene processes using a cobalt plating bath. The cobalt electroplating bath may contain “additive packages” or “additive systems” that include a combination of additives in certain ratios that facilitate the metal filling of high aspect ratio sub-micrometer features. Implementations of the disclosure provide new cobalt plating bath methods and chemistries and that include alkyl modified imidazoles, imidazolines, and imidazolidines suppressor compounds.