EVAPORATOR CHAMBER FOR FORMING FILMS ON SUBSTRATES

    公开(公告)号:US20210025048A1

    公开(公告)日:2021-01-28

    申请号:US16923600

    申请日:2020-07-08

    Abstract: One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, process chamber is provided that includes a lid plate having a plurality of cooling channels formed therein, a pedestal, the pedestal having a plurality of cooling channels formed therein, and a showerhead, wherein the showerhead comprises a plurality of segments and each segment is at least partially surrounded by a shield.

    ENHANCED PLATING BATH AND ADDITIVE CHEMISTRIES FOR COBALT PLATING

    公开(公告)号:US20200048784A1

    公开(公告)日:2020-02-13

    申请号:US16656026

    申请日:2019-10-17

    Abstract: Implementations of the disclosure may include methods of electroplating features formed on a semiconductor device, such as the trenches and vias formed by single or dual Damascene processes using a cobalt plating bath. The cobalt electroplating bath may contain “additive packages” or “additive systems” that include a combination of additives in certain ratios that facilitate the metal filling of high aspect ratio sub-micrometer features. Implementations of the disclosure provide new cobalt plating bath methods and chemistries and that include alkyl modified imidazoles, imidazolines, and imidazolidines suppressor compounds.

    VAPOR DELIVERY METHODS AND APPARATUS

    公开(公告)号:US20210069745A1

    公开(公告)日:2021-03-11

    申请号:US17013462

    申请日:2020-09-04

    Abstract: Embodiments of the present disclosure generally relate to organic vapor deposition systems and substrate processing methods related thereto. In one embodiment, a processing system comprises a lid assembly and a plurality of material delivery systems. The lid assembly includes lid plate having a first surface and a second surface disposed opposite of the first surface and a showerhead assembly coupled to the first surface. The showerhead assembly comprises a plurality of showerheads. Individual ones of the plurality of material delivery systems are fluidly coupled to one or more of the plurality of showerheads and are disposed on the second surface of the lid plate. Each of the material delivery systems comprise a delivery line, a delivery line valve disposed on the delivery line, a bypass line fluidly coupled to the delivery line at a point disposed between the delivery line valve and the showerhead, and a bypass valve disposed on the bypass line.

    ENHANCED PLATING BATH AND ADDITIVE CHEMISTRIES FOR COBALT PLATING

    公开(公告)号:US20170247806A1

    公开(公告)日:2017-08-31

    申请号:US15419430

    申请日:2017-01-30

    CPC classification number: C25D3/18 C25D7/123

    Abstract: Implementations of the disclosure may include methods of electroplating features formed on a semiconductor device, such as the trenches and vias formed by single or dual Damascene processes using a cobalt plating bath. The cobalt electroplating bath may contain “additive packages” or “additive systems” that include a combination of additives in certain ratios that facilitate the metal filling of high aspect ratio sub-micrometer features. Implementations of the disclosure provide new cobalt plating bath methods and chemistries and that include alkyl modified imidazoles, imidazolines, and imidazolidines suppressor compounds.

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