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    Gas distribution plate
    1.
    外观设计
    Gas distribution plate 有权

    公开(公告)号：USD1037778S1

    公开(公告)日：2024-08-06

    申请号：US29846787

    申请日：2022-07-19

    Applicant: Applied Materials, Inc.

    Designer： Ashutosh Agarwal ,  Eric J. Hoffmann ,  Dhritiman Subha Kashyap ,  Kartik Shah ,  Amit Rajendra Sherekar ,  Sanjeev Baluja

    Abstract: FIG. 1 is a top-front isometric view of our new design for a gas distribution plate;
    FIG. 2 is a top-rear isometric view of the gas distribution plate of FIG. 1;
    FIG. 3 is a front view of the gas distribution plate of FIG. 1;
    FIG. 4 is a rear view of the gas distribution plate of FIG. 1;
    FIG. 5 is a left side view of the gas distribution plate of FIG. 1;
    FIG. 6 is a right side view of the gas distribution plate of FIG. 1;
    FIG. 7 is a top view of the gas distribution plate of FIG. 1; and,
    FIG. 8 is a bottom view of the gas distribution plate of FIG. 1.
    The portions of the gas distribution plate shown in broken line form no part of the claimed design.

    THERMAL SHIELD FOR PROCESSING CHAMBER
    2.
    发明公开
    THERMAL SHIELD FOR PROCESSING CHAMBER 审中-公开

    公开(公告)号：US20230282454A1

    公开(公告)日：2023-09-07

    申请号：US17685046

    申请日：2022-03-02

    Applicant: Applied Materials, Inc.

    Inventor： Youngki Chang ,  Muhannad Mustafa ,  Kartik Shah ,  Dhritiman Subha Kashyap ,  Dhivanraj Subramanian

    IPC: H01J37/32

    CPC classification number: H01J37/32651 ,  H01J37/32715

    Abstract: Processing chambers, substrate supports and thermal shields are described. A thermal shield comprises a disc-shaped body having a thickness, an outer diameter with a first edge and a second edge at opposite ends of a diameter of the disc-shaped body, a front surface and a back surface defining the thickness. The front surface has a first longitudinal region comprising the first edge and a second longitudinal region comprising the second edge. Coating one or more of the first longitudinal region or the second longitudinal region with an emissivity material (i.e., emissivity) reduces side to side temperature variation. In some embodiments, processing chambers having the thermal shield described herein consume less power than comparative processing chambers that do not include a thermal shield.

    Spatial wafer processing with improved temperature uniformity
    3.
    发明授权
    Spatial wafer processing with improved temperature uniformity 有权

    公开(公告)号：US10787739B2

    公开(公告)日：2020-09-29

    申请号：US16658393

    申请日：2019-10-21

    Applicant: Applied Materials, Inc.

    Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Dhritiman Subha Kashyap ,  Jared Ahmad Lee ,  Tejas Ulavi ,  Michael Rice

    IPC: C23C16/455 ,  C23C16/458 ,  H01L21/67

    Abstract: Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5° C. is developed upon moving the wafer between the stations in about 0.5 seconds.

    Spatial Wafer Processing With Improved Temperature Uniformity
    4.
    发明申请
    Spatial Wafer Processing With Improved Temperature Uniformity 审中-公开

    公开(公告)号：US20200131635A1

    公开(公告)日：2020-04-30

    申请号：US16658393

    申请日：2019-10-21

    Applicant: Applied Materials, Inc.

    Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Dhritiman Subha Kashyap ,  Jared Ahmad Lee ,  Tejas Ulavi ,  Michael Rice

    IPC: C23C16/455 ,  H01L21/67 ,  C23C16/458

    Abstract: Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5° C. is developed upon moving the wafer between the stations in about 0.5 seconds.

    Thermally uniform deposition station
    6.
    发明授权
    Thermally uniform deposition station 有权

    公开(公告)号：US11584993B2

    公开(公告)日：2023-02-21

    申请号：US17074035

    申请日：2020-10-19

    Applicant: Applied Materials, Inc.

    Inventor： Jared Ahmad Lee ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Kenneth Brian Doering ,  Dhritiman Subha Kashyap ,  Kartik Shah

    IPC: H01J37/32 ,  C23C16/455 ,  C23C16/44

    Abstract: Gas distribution assemblies and methods for providing a flow of gases to a process station are described. The gas distribution assemblies comprise a pumping liner with a showerhead and a gas funnel positioned therein. The pumping liner has an inner wall that slants at a first angle relative to a central axis of the gas distribution assembly so that the inner wall adjacent the bottom wall of the pumping liner is closer to the central axis than the inner wall adjacent the top wall. The gas funnel and pumping liner form a plenum between the outer wall of the gas funnel, a cavity in the bottom wall of the gas funnel and the inner wall of the pumping liner.

    THERMALLY UNIFORM DEPOSITION STATION
    9.
    发明申请
    THERMALLY UNIFORM DEPOSITION STATION 有权

    公开(公告)号：US20220119948A1

    公开(公告)日：2022-04-21

    申请号：US17074035

    申请日：2020-10-19

    Applicant: Applied Materials, Inc.

    Inventor： Jared Ahmad Lee ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Kenneth Brian Doering ,  Dhritiman Subha Kashyap ,  Kartik Shah

    IPC: C23C16/455 ,  C23C16/44

    Abstract: Gas distribution assemblies and methods for providing a flow of gases to a process station are described. The gas distribution assemblies comprise a pumping liner with a showerhead and a gas funnel positioned therein. The pumping liner has an inner wall that slants at a first angle relative to a central axis of the gas distribution assembly so that the inner wall adjacent the bottom wall of the pumping liner is closer to the central axis than the inner wall adjacent the top wall. The gas funnel and pumping liner form a plenum between the outer wall of the gas funnel, a cavity in the bottom wall of the gas funnel and the inner wall of the pumping liner.

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