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    METHODS OF FORMING ABRUPT INTERFACES BETWEEN SILICON-AND-CARBON-CONTAINING MATERIALS AND SILICON-AND-OXYGEN-CONTAINING MATERIALS
    4.
    发明申请
    METHODS OF FORMING ABRUPT INTERFACES BETWEEN SILICON-AND-CARBON-CONTAINING MATERIALS AND SILICON-AND-OXYGEN-CONTAINING MATERIALS 有权

    公开(公告)号：US20250037987A1

    公开(公告)日：2025-01-30

    申请号：US18226579

    申请日：2023-07-26

    Applicant: Applied Materials, Inc.

    Inventor： Stephen Weeks ,  Hansel Lo ,  John Tolle ,  Christopher S. Olsen ,  Siddarth Krishnan

    IPC: H01L21/02

    Abstract: Exemplary semiconductor processing methods may include performing a pre-treatment on a substrate housed within a processing region of a semiconductor processing chamber. The substrate may include a layer of silicon-and-carbon-containing material. The pre-treatment may remove native oxide or residue from a surface of the layer of silicon-and-carbon-containing material. The methods may include providing a silicon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the silicon-containing precursor. The contacting may deposit a layer of silicon-containing material on the layer of silicon-and-carbon-containing material. The methods may include providing an oxygen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the oxygen-containing precursor. The contacting may oxidize the layer of silicon-containing material to form a layer of silicon-and-oxygen-containing material.

    SELECTIVE OXIDATION OF A SUBSTRATE
    6.
    发明公开
    SELECTIVE OXIDATION OF A SUBSTRATE 审中-公开

    公开(公告)号：US20240112903A1

    公开(公告)日：2024-04-04

    申请号：US17956157

    申请日：2022-09-29

    Applicant: Applied Materials, Inc.

    Inventor： Hansel Lo ,  Chris Olsen

    IPC: H01L21/02

    CPC classification number: H01L21/02236 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02247

    Abstract: Described herein is a method for selectively oxidizing a substrate. The method includes forming a non-conformal layer on at least one side surface of a trench or a hole of a substrate. After forming the non-conformal layer, the at least one trench or at least one hole may be selectively oxidized, wherein oxidation of the non-conformal layer and an exposed portion of the at least one side wall not covered by the non-conformal layer occurs to form an oxide layer. The oxide layer is thicker at a lower portion of the at least one side wall than the upper portion of the at least one side wall, such that it tapers.

    Side inject designs for improved radical concentrations
    9.
    发明授权
    Side inject designs for improved radical concentrations 有权

    公开(公告)号：US11501945B2

    公开(公告)日：2022-11-15

    申请号：US17102051

    申请日：2020-11-23

    Applicant: Applied Materials, Inc.

    Inventor： Eric Kihara Shono ,  Vishwas Kumar Pandey ,  Christopher S. Olsen ,  Hansel Lo ,  Agus Sofian Tjandra ,  Taewan Kim ,  Tobin Kaufman-Osborn

    IPC: H01J37/04 ,  H01L21/67 ,  H01J37/32 ,  H01J37/20

    Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.

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