LID STACK FOR HIGH FREQUENCY PROCESSING

    公开(公告)号:US20230049431A1

    公开(公告)日:2023-02-16

    申请号:US17979099

    申请日:2022-11-02

    Abstract: Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.

    Lid stack for high frequency processing

    公开(公告)号:US11499231B2

    公开(公告)日:2022-11-15

    申请号:US16844089

    申请日:2020-04-09

    Abstract: Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.

    Advanced temperature monitoring system with expandable modular layout design

    公开(公告)号:US12013291B2

    公开(公告)日:2024-06-18

    申请号:US17070803

    申请日:2020-10-14

    CPC classification number: G01K3/005 G01K3/10 G03F7/427 G06F2119/08

    Abstract: Embodiments herein provide methods of monitoring temperatures of fluid delivery conduits for delivering fluids to, and other components external to, a processing volume of a processing chamber used in electronic device fabrication manufacturing, and monitoring systems related thereto. In one embodiment, a method includes receiving, at the temperature monitoring system (TMS) controller, information from a first plurality of temperature sensors and a second plurality of temperature sensors, comparing, using the TMS controller, the temperature information to one or more pre-determined control limits, and communicating, using the TMS controller, an out-of-control event to a user. Generally, the temperature monitoring system features the first and second pluralities of temperature sensors, the TMS controller, a first connection module, and a second connection module.

    In-situ light detection methods and apparatus for ultraviolet semiconductor substrate processing

    公开(公告)号:US11215934B2

    公开(公告)日:2022-01-04

    申请号:US16934597

    申请日:2020-07-21

    Abstract: Methods and apparatus for detecting ultraviolet light are provided herein. For example, an ultraviolet (UV) process chamber includes a vacuum window or a transparent showerhead; a UV light source disposed above one of the vacuum window or the transparent showerhead and configured to generate and transmit UV light into a process volume of the UV process chamber; and a first UV sensor configured to measure at least one of emissivity from the UV light source or irradiance of the UV light transmitted into the process volume and to transmit a signal corresponding to a measured at least one of emissivity from the UV light source or irradiance of the UV light to a controller coupled to the UV process chamber during operation.

    LID STACK FOR HIGH FREQUENCY PROCESSING

    公开(公告)号:US20210317578A1

    公开(公告)日:2021-10-14

    申请号:US16844089

    申请日:2020-04-09

    Abstract: Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.

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