公开(公告)号：US20220037126A1

公开(公告)日：2022-02-03

申请号：US16983164

申请日：2020-08-03

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Ren-Guan Duan ,  Gayatri Natu ,  Tae Won Kim ,  Jiyong Huang ,  Nitin Deepak ,  Paul Brillhart ,  Lin Zhang ,  Yikai Chen ,  Sanni Sinikka Seppälä ,  Ganesh Balasubramanian ,  JuanCarlos Rocha ,  Shankar Venkataraman ,  Katherine Elizabeth Woo

IPC: H01J37/32 ,  C23C16/30 ,  C23C16/455 ,  C23C16/44

Abstract: Embodiments of the disclosure relate to articles, coated chamber components and methods of coating chamber components with a protective coating that includes at least one metal fluoride having a formula selected from the group consisting of M1xFw, M1xM2yFw and M1xM2yM3zFw, where at least one of M1, M2, or M3 is magnesium or lanthanum. The protective coating can be deposited by atomic layer deposition, chemical vapor deposition, electron beam ion assisted deposition, or physical vapor deposition.

公开(公告)号：US20250003061A1

公开(公告)日：2025-01-02

申请号：US18343351

申请日：2023-06-28

Applicant: Applied Materials, Inc.

Inventor： Nitin Deepak ,  Ryan Sheil ,  Katherine Woo ,  Juan Carlos Rocha-Alvarez ,  Jennifer Y. Sun

IPC: C23C16/40 ,  C23C16/34

Abstract: Exemplary processing methods may include providing a component for semiconductor processing to a processing region of a processing chamber. The methods may include providing one or more interface deposition precursors to the processing region. The methods may include depositing a layer of interface material on the component for semiconductor processing in the processing region. The methods may include providing one or more coating deposition precursors to the processing region. The methods may include depositing a layer of coating material on the component for semiconductor processing in the processing region.

公开(公告)号：US20240327300A1

公开(公告)日：2024-10-03

申请号：US18128124

申请日：2023-03-29

Applicant: Applied Materials, Inc.

Inventor： Nitin Deepak ,  Katherine Woo ,  Ryan Sheil ,  Juan Carlos Rocha-Alvarez ,  Jennifer Y. Sun

IPC: C04B35/628 ,  C04B35/626

CPC classification number: C04B35/62805 ,  C04B35/62665 ,  C04B35/62836 ,  C04B2235/666 ,  C04B2235/85 ,  C04B2235/9669

Abstract: Exemplary processing methods may include providing a powder to a processing region of a processing chamber. The methods may include providing one or more deposition precursors to the processing region. The methods may include generating plasma effluents of the one or more deposition precursors. The methods may include depositing a layer of material on the powder in the processing region. The layer of material may include a corrosion-resistant material. A temperature within the processing chamber is maintained at less than or about 700° C.

公开(公告)号：US20250149373A1

公开(公告)日：2025-05-08

申请号：US18545643

申请日：2023-12-19

Applicant: Applied Materials, Inc.

Inventor： Nitin Deepak ,  Jennifer Sun ,  Mayur Govind Kulkarni ,  Miguel S. Fung ,  Darius "D" Alexander-Jones ,  Chih Peng ,  Deenesh Padhi ,  Kwangduk Douglas Lee ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Simmon Kuo ,  Nagarajan Rajagopalan ,  Shankho Sen

IPC: H01L21/687

Abstract: Semiconductor components and systems having substrate contacting surfaces with a reduced hardness are provided. Systems and components include a ceramic, metallic, or non-metallic component for contacting a substrate. Systems and components include a layer of coating material on at least a portion of a substrate contacting surface of the component. Systems and components include where the component for contacting a substrate includes a component Vickers hardness value, and the layer of coating material exhibits a coating layer Vickers hardness value. Systems and components include where the coating layer Vickers hardness value is greater than or about 10% less than the component Vickers hardness value.

公开(公告)号：US12134822B2

公开(公告)日：2024-11-05

申请号：US17529463

申请日：2021-11-18

Applicant: Applied Materials, Inc.

Inventor： Tapash Chakraborty ,  Nitin Deepak ,  Prerna Sonthalia Goradia ,  Bahubali S. Upadhye ,  Nilesh Chimanrao Bagul ,  Subramanya P. Herle ,  Visweswaren Sivaramakrishnan

IPC: C23C16/44

Abstract: Exemplary methods of removing lithium-containing deposits may include heating a surface of a lithium-containing deposit. The surface may include oxygen or nitrogen, and the lithium-containing deposit may be disposed on a surface of a processing chamber. The methods may include contacting the surface of the lithium-containing deposit with a hydrogen-containing precursor. The contacting may hydrogenate the surface of the lithium-containing deposit. The methods may include contacting the lithium-containing deposit with a nitrogen-containing precursor to form volatile byproducts. The methods may include exhausting the volatile byproducts of the lithium-containing deposit from the processing chamber.

公开(公告)号：US20240153745A1

公开(公告)日：2024-05-09

申请号：US17981394

申请日：2022-11-05

Applicant: Applied Materials, Inc.

Inventor： Katherine Woo ,  Jennifer Y. Sun ,  Jian Li ,  Wenhao Zhang ,  Mayur Govind Kulkarni ,  Chidambara A. Ramalingam ,  Ryan Sheil ,  Martin J. Seamons ,  Nitin Deepak

IPC: H01J37/32 ,  C23C16/455 ,  C23C28/04 ,  C25D11/18

CPC classification number: H01J37/32495 ,  C23C16/45525 ,  C23C28/046 ,  C25D11/18 ,  H01J37/32467

Abstract: Semiconductor fabrication component preparation methods are described. In embodiments, the methods include forming a first layer on a surface of the semiconductor fabrication component. The first layer is characterized by a porosity of greater than or about 0.01 vol. %. The methods further include depositing a second layer on the first layer, where the second layer is characterized by a porosity of less than or about 20 vol. %. Treated semiconductor fabrication components are also described. In embodiments, the treated components include a first layer formed in the surface of the semiconductor fabrication component, where the first layer is characterized by a porosity of greater than or about 0.01 vol. %., and a second layer positioned on the first layer, where the second layer is characterized by a porosity of less than or about 20 vol. %.

公开(公告)号：US11926903B2

公开(公告)日：2024-03-12

申请号：US17836578

申请日：2022-06-09

Applicant: Applied Materials, Inc.

Inventor： Nitin Deepak ,  Tapash Chakraborty ,  Prerna Sonthalia Goradia ,  Visweswaren Sivaramakrishnan ,  Nilesh Chimanrao Bagul ,  Bahubali S. Upadhye

IPC: C23F1/00 ,  C09K13/00 ,  C23F1/10 ,  C23F1/12 ,  C23F1/44 ,  C23F4/02

CPC classification number: C23F1/00 ,  C09K13/00 ,  C23F1/10 ,  C23F1/12 ,  C23F1/44 ,  C23F4/02

Abstract: Methods for etching alkali metal compounds are disclosed. Some embodiments of the disclosure expose an alkali metal compound to an alcohol to form a volatile metal alkoxide. Some embodiments of the disclosure expose an alkali metal compound to a β-diketone to form a volatile alkali metal β-diketonate compound. Some embodiments of the disclosure are performed in-situ after a deposition process. Some embodiments of the disclosure provide methods which selectively etch alkali metal compounds.

公开(公告)号：US11702744B2

公开(公告)日：2023-07-18

申请号：US17673345

申请日：2022-02-16

Applicant: Applied Materials, Inc.

Inventor： Nitin Deepak ,  Gayatri Natu ,  Albert Barrett Hicks, III ,  Prerna Sonthalia Goradia ,  Jennifer Y. Sun

IPC: C23C16/455 ,  C23C16/30

CPC classification number: C23C16/45553 ,  C23C16/30

Abstract: Methods of forming a metal oxyfluoride films are provided. A substrate is placed in an atomic layer deposition (ALD) chamber having a processing region. Flows of zirconium-containing gas, a zirconium precursor gas, for example, Tris(dimethylamino)cyclopentadienyl zirconium, an oxygen-containing gas, a fluorine containing gas, and an yttrium precursor, for example, tris(butylcyclopentadienyl)yttrium gas are delivered to the processing region, where a metal oxyfluoride film such as an yttrium zirconium oxyfluoride film, is formed.

公开(公告)号：US11424134B2

公开(公告)日：2022-08-23

申请号：US17005284

申请日：2020-08-27

Applicant: Applied Materials, Inc.

Inventor： Nitin Deepak ,  Prerna Sonthalia Goradia

IPC: H01L21/3213 ,  H01L21/768 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/322

Abstract: The present disclosure generally relates to methods for selectively etching copper, cobalt, and/or aluminum layers on a substrate semiconductor manufacturing applications. A substrate comprising one or more copper layers, cobalt layers, or aluminum layers is transferred to a processing chamber. The surface of the copper, cobalt, or aluminum layer is oxidized. The oxidized copper, cobalt, or aluminum surface is then exposed to hexafluoroacetylacetonate vapor. The hexafluoroacetylacetonate vapor reacts with the oxidized copper, cobalt, or aluminum surface to form a volatile compound, which is then pumped out of the chamber. The reaction of the oxidized copper, cobalt, or aluminum surface with the hexafluoroacetylacetonate vapor selectively atomic layer etches the copper, cobalt, or aluminum surface.

公开(公告)号：US20190287808A1

公开(公告)日：2019-09-19

申请号：US15920146

申请日：2018-03-13

Applicant: Applied Materials, Inc.

Inventor： Prerna Sonthalia Goradia ,  Fei Wang ,  Geetika Bajaj ,  Nitin Ingle ,  Zihui Li ,  Robert Jan Visser ,  Nitin Deepak

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/308 ,  H01J37/32

Abstract: Precursors, such as interhalogens and/or compounds formed of noble gases and halogens, may be supplied in a gaseous form to a semiconductor processing chamber at a predetermined amount, flow rate, pressure, and/or temperature in a cyclic manner such that atomic layer etching of select semiconductor materials may be achieved in each cycle. In the etching process, the element of the precursor that has a relatively higher electronegativity may react with select semiconductor materials to form volatile etching byproducts. The element of the precursor that has a relatively lower electronegativity may form a gas that may be recycled to re-form an precursor with one or more halogen-containing materials using a plasma process.